摘要:
An electron emission device which increases the amount of electron emission without heightening the driving voltage for making the electron emission. The electron emission device includes a substrate, first electrodes formed on the substrate, electron emission regions electrically connected to the first electrodes, and second and third electrodes placed at planes different from the first electrodes. The second and the third electrodes receive the same voltage, and form the electric field for emitting electrons from the electron emission regions. Fourth electrodes may be placed at substantially the same plane as the first electrodes, and receive the same voltage as the second and the third electrodes.
摘要:
An electron emission device includes gate electrodes formed on a substrate. The gate electrodes are located on a first plane. An insulating layer is formed on the gate electrodes. Cathode electrodes are formed on the insulating layer. Electron emission regions are electrically connected to the cathode electrodes. The electron emission regions are located on a second plane. In addition, the electron emission device includes counter electrodes placed substantially on the second plane of the electron emission regions. The gate electrodes and the counter electrodes are for receiving a same voltage, and a distance, D, between at least one of the electron emission regions and at least one of the counter electrodes satisfies the following condition: 1(μm)≦D≦28.1553+1.7060t(μm), where t indicates a thickness of the insulating layer.
摘要:
An electron emission device includes first and second substrates opposing one another with a gap therebetween. Cathode electrodes are formed on the first substrate. An insulation layer is formed covering the cathode electrodes and having apertures. Gate electrodes are formed on the insulation layer and have apertures at locations corresponding to the locations of the apertures of the insulation layer so as to expose the cathode electrodes. Electron emission regions are formed in the apertures on the cathode electrodes. An anode electrode is formed on the second substrate. An outer surface of the electron emission regions is formed with a shape similar to a shape of equipotential lines formed when there is no electron emission region in the apertures, and predetermined drive voltages are applied to the electrodes.
摘要:
An electron emission device includes first and second substrates opposing one another with a gap therebetween. Cathode electrodes are formed on the first substrate. An insulation layer is formed covering the cathode electrodes and having apertures. Gate electrodes are formed on the insulation layer and have apertures at locations corresponding to the locations of the apertures of the insulation layer so as to expose the cathode electrodes. Electron emission regions are formed in the apertures on the cathode electrodes. An anode electrode is formed on the second substrate. An outer surface of the electron emission regions is formed with a shape similar to a shape of equipotential lines formed when there is no electron emission region in the apertures, and predetermined drive voltages are applied to the electrodes.
摘要:
An electron emission device includes gate electrodes formed on a substrate. The gate electrodes are located on a first plane. An insulating layer is formed on the gate electrodes. Cathode electrodes are formed on the insulating layer. Electron emission regions are electrically connected to the cathode electrodes. The electron emission regions are located on a second plane. In addition, the electron emission device includes counter electrodes placed substantially on the second plane of the electron emission regions. The gate electrodes and the counter electrodes are for receiving a same voltage, and a distance, D, between at least one of the electron emission regions and at least one of the counter electrodes satisfies the following condition: 1(μm)≦D≦28.1553+1.7060t(μm), where t indicates a thickness of the insulating layer.
摘要:
A field emission display includes a first substrate and a second substrate opposing one another with a predetermined gap therebetween. At least one gate electrode is formed on the first substrate. An insulation layer formed over the first substrate covering the gate electrode. Cathode electrodes are formed on the insulation layer and including field enhancing sections that expose the insulation layer corresponding to pixel regions. Electron emission sources formed over the cathode electrodes adjacent at least one side of the field enhancing sections. An illumination assembly is formed on the second substrate and realizes the display of images by electrons emitted from the electron emission sources.
摘要:
An electron emission device includes first electrodes arranged on a substrate in a direction of the substrate, and an insulating layer arranged on an entire surface of the substrate and covering the first electrodes. Second electrodes are arranged on the insulating layer and are perpendicular to the first electrodes. Electron emission regions are connected to one of the first and the second electrodes. The lateral edges of the first electrodes and the lateral edges of the second electrodes respectively cross each other.
摘要:
A field emission display. Gate electrodes are formed in a predetermined pattern on a first substrate. An insulation layer is formed on the first substrate covering the gate electrodes. Cathode electrodes are formed in a predetermined pattern on the insulation layer. Emitters are provided electrically contacting the cathode electrodes. A second substrate is provided opposing the first substrate with a predetermined gap therebetween. The first substrate and the second substrate form a vacuum container. An anode electrode is formed on a surface of the second substrate opposing the first substrate. Phosphor layers are formed in a predetermined pattern on the anode electrode. Portions of the cathode electrodes are removed to form emitter-receiving sections. Fences are formed between the emitter-receiving sections, one of the emitters being provided in each of the emitter-receiving sections electrically contacting the cathode electrodes.
摘要:
An electron emission device can include gate electrodes formed on a substrate and cathode electrodes insulated from the gate electrodes with an insulating layer interposed between them. Each cathode electrode can have a receptor at a peripheral side. Electron emission regions may be formed within the receptors and in contact with the cathode electrodes. Counter electrodes can face the cathode electrodes, can be coplanar with the cathode electrodes, and can be coupled to the gate electrodes. The shortest distance between the electron emission region and the counter electrode may be smaller than the shortest distance between the cathode electrode and the counter electrode.
摘要:
An electron emission device can include gate electrodes formed on a substrate and cathode electrodes insulated from the gate electrodes with an insulating layer interposed between them. Each cathode electrode can have a receptor at a peripheral side. Electron emission regions may be formed within the receptors and in contact with the cathode electrodes. Counter electrodes can face the cathode electrodes, can be coplanar with the cathode electrodes, and can be coupled to the gate electrodes. The shortest distance between the electron emission region and the counter electrode may be smaller than the shortest distance between the cathode electrode and the counter electrode.