-
1.发明授权Method of forming a light emitting diode emitter substrate with highly reflective metal bonding 有权形成具有高反射金属接合的发光二极管发射极基板的方法公开(公告)号：US08236584B1
公开(公告)日：2012-08-07
申请号：US13025975
申请日：2011-02-11
申请人： Chyi Shyuan Chem , Wen-Chien Fu , Hsing-Kuo Hsia , Chih-Kuang Yu , Ching-Hua Chiu , Hung-Yi Kuo
发明人： Chyi Shyuan Chem , Wen-Chien Fu , Hsing-Kuo Hsia , Chih-Kuang Yu , Ching-Hua Chiu , Hung-Yi Kuo
CPC分类号： H01L33/647 , H01L24/73 , H01L24/97 , H01L33/005 , H01L33/62 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49107 , H01L2224/73265 , H01L2224/8592 , H01L2224/97 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/014 , H01L2924/10253 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/15787 , H01L2933/0033 , H01L2224/85 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2224/92247
摘要： The present disclosure provides one embodiment of a method for fabricating a light emitting diode (LED) package. The method includes forming a plurality of through silicon vias (TSVs) on a silicon substrate; depositing a dielectric layer over a first side and a second side of the silicon substrate and over sidewall surfaces of the TSVs; forming a metal layer patterned over the dielectric layer on the first side and the second side of the silicon substrate and further filling the TSVs; and forming a plurality of highly reflective bonding pads over the metal layer on the second side of the silicon substrate for LED bonding and wire bonding.
摘要翻译： 本公开提供了制造发光二极管（LED）封装的方法的一个实施例。 该方法包括在硅衬底上形成多个通硅通孔（TSV）; 在所述硅衬底的第一侧和第二侧以及所述TSV的侧壁表面上沉积介电层; 在硅衬底的第一侧和第二侧上的电介质层上形成图案化的金属层，并进一步填充TSV; 以及在所述硅衬底的所述第二侧上的所述金属层上形成多个高反射性接合焊盘，用于LED接合和引线接合。
-
2.发明申请Light Emitting Diode Emitter Substrate with Highly Reflective Metal Bonding 有权具有高度反射金属粘接的发光二极管发射极基板公开(公告)号：US20120228650A1
公开(公告)日：2012-09-13
申请号：US13476167
申请日：2012-05-21
申请人： Chyi Shyuan Chern , Wen-Chien Fu , Hsing-Kuo Hsia , Chih-Kuang Yu , Ching-Hua Chiu , Hung-Yi Kuo
发明人： Chyi Shyuan Chern , Wen-Chien Fu , Hsing-Kuo Hsia , Chih-Kuang Yu , Ching-Hua Chiu , Hung-Yi Kuo
CPC分类号： H01L33/647 , H01L24/73 , H01L24/97 , H01L33/005 , H01L33/62 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49107 , H01L2224/73265 , H01L2224/8592 , H01L2224/97 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/014 , H01L2924/10253 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/15787 , H01L2933/0033 , H01L2224/85 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2224/92247
摘要： The present disclosure provides one embodiment of a method for fabricating a light emitting diode (LED) package. The method includes forming a plurality of through silicon vias (TSVs) on a silicon substrate; depositing a dielectric layer over a first side and a second side of the silicon substrate and over sidewall surfaces of the TSVs; forming a metal layer patterned over the dielectric layer on the first side and the second side of the silicon substrate and further filling the TSVs; and forming a plurality of highly reflective bonding pads over the metal layer on the second side of the silicon substrate for LED bonding and wire bonding.
摘要翻译： 本公开提供了制造发光二极管（LED）封装的方法的一个实施例。 该方法包括在硅衬底上形成多个通硅通孔（TSV）; 在所述硅衬底的第一侧和第二侧以及所述TSV的侧壁表面上沉积介电层; 在所述硅衬底的所述第一侧和所述第二侧上的所述电介质层上形成图案化的金属层，并进一步填充所述TSV; 以及在所述硅衬底的所述第二侧上的所述金属层上形成多个高反射性接合焊盘，用于LED接合和引线接合。
-
3.发明授权公开(公告)号：US09099632B2
公开(公告)日：2015-08-04
申请号：US13476167
申请日：2012-05-21
申请人： Chyi Shyuan Chern , Wen-Chien Fu , Hsing-Kuo Hsia , Chih-Kuang Yu , Ching-Hua Chiu , Hung-Yi Kuo
发明人： Chyi Shyuan Chern , Wen-Chien Fu , Hsing-Kuo Hsia , Chih-Kuang Yu , Ching-Hua Chiu , Hung-Yi Kuo
CPC分类号： H01L33/647 , H01L24/73 , H01L24/97 , H01L33/005 , H01L33/62 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49107 , H01L2224/73265 , H01L2224/8592 , H01L2224/97 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/014 , H01L2924/10253 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/15787 , H01L2933/0033 , H01L2224/85 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2224/92247
摘要： A package structure includes: a substrate having a first side and a second side opposite to the first side; a metal layer disposed over at least a portion of the second side of the substrate; a light-reflective layer disposed over the first side of the substrate; and a photonic device bonded to the light-reflective layer from the first side. A segment of the metal layer extends through the substrate from the first side to the second side, and a portion of the substrate is completely enclosed in a cross-sectional view by the metal layer. The package structure is free of a bonding wire over the second side of the substrate.
摘要翻译： 封装结构包括：具有第一侧和与第一侧相对的第二侧的衬底; 设置在所述基板的第二侧的至少一部分上的金属层; 设置在所述基板的所述第一侧上的光反射层; 以及从第一侧接合到光反射层的光子器件。 金属层的一段从第一侧延伸穿过衬底到第二侧，并且一部分衬底被金属层的横截面视图完全封闭。 封装结构在衬底的第二面上没有接合线。
-
4.发明申请METHOD OF FORMING A LIGHT EMITTING DIODE EMITTER SUBSTRATE WITH HIGHLY REFLECTIVE METAL BONDING 有权形成具有高反射金属接合的发光二极管发射极基板的方法公开(公告)号：US20120205694A1
公开(公告)日：2012-08-16
申请号：US13025975
申请日：2011-02-11
申请人： Chyi Shyuan Chern , Wen-Chien Fu , Hsing-Kuo Hsia , Chih-Kuang Yu , Ching-Hua Chiu , Hung-Yi Kuo
发明人： Chyi Shyuan Chern , Wen-Chien Fu , Hsing-Kuo Hsia , Chih-Kuang Yu , Ching-Hua Chiu , Hung-Yi Kuo
IPC分类号： H01L33/60
CPC分类号： H01L33/647 , H01L24/73 , H01L24/97 , H01L33/005 , H01L33/62 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49107 , H01L2224/73265 , H01L2224/8592 , H01L2224/97 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/014 , H01L2924/10253 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/15787 , H01L2933/0033 , H01L2224/85 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2224/92247
摘要： The present disclosure provides one embodiment of a method for fabricating a light emitting diode (LED) package. The method includes forming a plurality of through silicon vias (TSVs) on a silicon substrate; depositing a dielectric layer over a first side and a second side of the silicon substrate and over sidewall surfaces of the TSVs; forming a metal layer patterned over the dielectric layer on the first side and the second side of the silicon substrate and further filling the TSVs; and forming a plurality of highly reflective bonding pads over the metal layer on the second side of the silicon substrate for LED bonding and wire bonding.
摘要翻译： 本公开提供了制造发光二极管（LED）封装的方法的一个实施例。 该方法包括在硅衬底上形成多个通硅通孔（TSV）; 在所述硅衬底的第一侧和第二侧以及所述TSV的侧壁表面上沉积介电层; 在所述硅衬底的所述第一侧和所述第二侧上的所述电介质层上形成图案化的金属层，并进一步填充所述TSV; 以及在所述硅衬底的所述第二侧上的所述金属层上形成多个高反射性接合焊盘，用于LED接合和引线接合。
-
-
-
搜索结果
4 条记录 (耗时 0.027 秒)
