Two terminal drive of bipolar junction transistor (BJT) of a light emitting diode (LED)-based bulb
    2.
    发明授权
    Two terminal drive of bipolar junction transistor (BJT) of a light emitting diode (LED)-based bulb 有权
    基于发光二极管(LED)的灯泡的双极结型晶体管(BJT)的两端驱动器

    公开(公告)号:US09496855B2

    公开(公告)日:2016-11-15

    申请号:US14444087

    申请日:2014-07-28

    CPC classification number: H03K4/48 H05B33/0815 H05B37/02 Y02B20/347

    Abstract: A bipolar junction transistor (BJT) may be used in a power stage DC-to-DC converter, such as for LED-based light bulbs. The BJT may be switched on and off from a controller coupled to two terminals of the BJT. Through the two terminals, the control IC may dynamically adjust a reverse recovery time period of the BJT. The reverse recovery time period may be adjusted by changing an amount of base charge that accumulates on the BJT. Additional, the reverse recovery may be controlled through the use of a reverse base current source applied to the BJT after beginning switching off the BJT.

    Abstract translation: 双极结型晶体管(BJT)可用于功率级DC-DC转换器,例如用于基于LED的灯泡。 BJT可以从耦合到BJT的两个端子的控制器接通和断开。 通过两个端子,控制IC可以动态地调整BJT的反向恢复时间段。 可以通过改变在BJT上积累的基本电荷的量来调整反向恢复时间段。 此外,可以通过在开始关闭BJT之后使用施加到BJT的反向基极电流源来控制反向恢复。

    COMPENSATING FOR A REVERSE RECOVERY TIME PERIOD OF A BIPOLAR JUNCTION TRANSISTOR (BJT) IN SWITCH-MODE OPERATION OF A LIGHT-EMITTING DIODE (LED)-BASED BULB
    3.
    发明申请
    COMPENSATING FOR A REVERSE RECOVERY TIME PERIOD OF A BIPOLAR JUNCTION TRANSISTOR (BJT) IN SWITCH-MODE OPERATION OF A LIGHT-EMITTING DIODE (LED)-BASED BULB 有权
    双极性晶体管(BJT)在发光二极管(LED)的开关模式操作中的反向恢复时间周期的补偿

    公开(公告)号:US20150028768A1

    公开(公告)日:2015-01-29

    申请号:US14341984

    申请日:2014-07-28

    CPC classification number: H05B33/0815 H02M3/156 H05B33/0845 H05B37/02

    Abstract: A turn-off transition time period, also referred to as a reverse recovery time period, may be compensated for by a controller of a power stage including a bipolar junction transistor (BJT). The reverse recovery time period may be measured in one switching cycle and a subsequent switching cycle may include compensations based on the measured reverse recovery time period. That is the switching on and off of the BJT may be compensated to obtain a desired average output current to a load. When the reverse recovery time period is known, an error in the peak current obtained due to the reverse recovery time period may be calculated. The calculated error may be used to offset the target peak current for controlling the switching of the BJT to begin a turn-off transition of the BJT earlier in a switching cycle and thus reduce error in peak current at the BJT.

    Abstract translation: 还可以通过包括双极结型晶体管(BJT)的功率级的控制器补偿关断转换时间段(也称为反向恢复时间周期)。 可以在一个开关周期内测量反向恢复时间段,并且随后的开关周期可以包括基于所测量的反向恢复时间段的补偿。 也就是说,可以补偿BJT的接通和断开以获得期望的负载平均输出电流。 当已知反向恢复时间周期时,可以计算由于反向恢复时间段而获得的峰值电流的误差。 计算出的误差可用于偏移目标峰值电流,以控制BJT的开关,以便在开关周期中较早地开始BJT的关断转换,从而减小BJT的峰值电流误差。

    Compensating for a reverse recovery time period of a bipolar junction transistor (BJT) in switch-mode operation of a light-emitting diode (LED)-based bulb
    4.
    发明授权
    Compensating for a reverse recovery time period of a bipolar junction transistor (BJT) in switch-mode operation of a light-emitting diode (LED)-based bulb 有权
    在基于发光二极管(LED)的灯泡的开关模式操作中补偿双极结型晶体管(BJT)的反向恢复时间周期

    公开(公告)号:US09504106B2

    公开(公告)日:2016-11-22

    申请号:US14341984

    申请日:2014-07-28

    CPC classification number: H05B33/0815 H02M3/156 H05B33/0845 H05B37/02

    Abstract: A turn-off transition time period, also referred to as a reverse recovery time period, may be compensated for by a controller of a power stage including a bipolar junction transistor (BJT). The reverse recovery time period may be measured in one switching cycle and a subsequent switching cycle may include compensations based on the measured reverse recovery time period. That is the switching on and off of the BJT may be compensated to obtain a desired average output current to a load. When the reverse recovery time period is known, an error in the peak current obtained due to the reverse recovery time period may be calculated. The calculated error may be used to offset the target peak current for controlling the switching of the BJT to begin a turn-off transition of the BJT earlier in a switching cycle and thus reduce error in peak current at the BJT.

    Abstract translation: 还可以通过包括双极结型晶体管(BJT)的功率级的控制器补偿关断转换时间段(也称为反向恢复时间周期)。 可以在一个开关周期内测量反向恢复时间段,并且随后的开关周期可以包括基于所测量的反向恢复时间段的补偿。 也就是说,可以补偿BJT的接通和断开以获得期望的负载平均输出电流。 当已知反向恢复时间周期时,可以计算由于反向恢复时间段而获得的峰值电流的误差。 计算出的误差可用于偏移目标峰值电流,以控制BJT的开关,以便在开关周期中较早地开始BJT的关断转换,从而减小BJT的峰值电流误差。

    Bandgap with thermal drift correction
    6.
    发明授权
    Bandgap with thermal drift correction 有权
    带隙带热漂移校正

    公开(公告)号:US09329614B1

    公开(公告)日:2016-05-03

    申请号:US13837830

    申请日:2013-03-15

    Abstract: In one embodiment a heating mechanism is provided with an integrated circuit for testing and calibration purposes. During production testing, heating elements may be activated in order to quickly bring an integrated circuit up to operating temperature for temperature testing or calibration. Once the operating test temperature has been reached, the circuit can be quickly and easily tested to show it is operable within the design temperature range and/or to obtain calibration data to correct for temperature drift. Calibration data may be used to create correction data, which may be stored within the integrated circuit. During normal operation, the correction data may be used to compensate for variations in operation due to temperature.

    Abstract translation: 在一个实施例中,加热机构设置有用于测试和校准目的的集成电路。 在生产测试期间,可以激活加热元件,以便快速将集成电路带到工作温度进行温度测试或校准。 一旦达到了工作测试温度,该电路就可以快速方便地进行测试,以显示其在设计温度范围内可操作和/或获得校准数据以校正温度漂移。 可以使用校准数据来创建可以存储在集成电路内的校正数据。 在正常操作期间,可以使用校正数据来补偿由于温度导致的操作变化。

    TWO TERMINAL DRIVE OF BIPOLAR JUNCTION TRANSISTOR (BJT) FOR SWITCH-MODE OPERATION OF A LIGHT EMITTING DIODE (LED)-BASED BULB
    7.
    发明申请
    TWO TERMINAL DRIVE OF BIPOLAR JUNCTION TRANSISTOR (BJT) FOR SWITCH-MODE OPERATION OF A LIGHT EMITTING DIODE (LED)-BASED BULB 有权
    双极型晶体管(BJT)的双端驱动器用于发光二极管(LED)的开关模式操作

    公开(公告)号:US20150028764A1

    公开(公告)日:2015-01-29

    申请号:US14444087

    申请日:2014-07-28

    CPC classification number: H03K4/48 H05B33/0815 H05B37/02 Y02B20/347

    Abstract: A bipolar junction transistor (BJT) may be used in a power stage DC-to-DC converter, such as for LED-based light bulbs. The BJT may be switched on and off from a controller coupled to two terminals of the BJT. Through the two terminals, the control IC may dynamically adjust a reverse recovery time period of the BJT. The reverse recovery time period may be adjusted by changing an amount of base charge that accumulates on the BJT. Additional, the reverse recovery may be controlled through the use of a reverse base current source applied to the BJT after beginning switching off the BJT.

    Abstract translation: 双极结型晶体管(BJT)可用于功率级DC-DC转换器,例如用于基于LED的灯泡。 BJT可以从耦合到BJT的两个端子的控制器接通和断开。 通过两个端子,控制IC可以动态地调整BJT的反向恢复时间段。 可以通过改变在BJT上积累的基本电荷的量来调整反向恢复时间段。 此外,可以通过在开始关闭BJT之后使用施加到BJT的反向基极电流源来控制反向恢复。

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