公开(公告)号：US20170139087A1

公开(公告)日：2017-05-18

申请号：US15346804

申请日：2016-11-09

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Inventor： Salim Boutami ,  Jean-Jacques Yon

IPC: G02B5/00 ,  G01J5/08 ,  G02B5/20 ,  H01L21/311 ,  H01L21/3205

CPC classification number: G02B5/008 ,  B82Y20/00 ,  G01J5/0862 ,  G02B5/204 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32051 ,  H01L31/02327

Abstract: A plasmonic optical filter, including: a periodic repetition of metal slabs above a metal surface; dielectric spacers arranged between the slabs and the metal surface so that there exists an empty space between each slab and the metal surface; and an opening between each of said empty spaces and the outside.

公开(公告)号：US20240295439A1

公开(公告)日：2024-09-05

申请号：US18260173

申请日：2021-12-30

Applicant: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

Inventor： Jean-Jacques Yon ,  Geoffroy Dumont ,  Thomas Perrillat-Bottonet

IPC: G01J5/04 ,  G01J5/02 ,  G01J5/06 ,  G01J5/70

CPC classification number: G01J5/045 ,  G01J5/024 ,  G01J5/064 ,  G01J5/70

Abstract: A method for manufacturing a detection device includes steps of: producing thermal detectors distributed in a detection array and a compensation array using mineral sacrificial layers; producing an encapsulation structure comprising a thin opaque layer extending above the compensation array; partially removing the mineral sacrificial layers by chemical etching, so as to release the detection array and the compensation array, and to obtain the peripheral wall then formed of a non-etched portion of the mineral sacrificial layers and surrounding the compensation array, the thin opaque layer then being suspended above the compensation array and resting on the peripheral wall.

公开(公告)号：US10982997B2

公开(公告)日：2021-04-20

申请号：US16492575

申请日：2018-03-14

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Inventor： Sébastien Becker ,  Abdelkader Aliane ,  Denis Pelenc ,  Jean-Jacques Yon

IPC: G01J1/04 ,  G01J5/08 ,  G01J5/04 ,  G01J5/20 ,  H01L27/146

Abstract: A radiation sensor including a plurality of pixels formed in and on a semiconductor substrate, each pixel including a microboard suspended above the substrate by thermal insulation arms, the microboard including: a conversion element for converting incident electromagnetic radiation into thermal energy; and a passive optical shutter including a heat-sensitive layer covering one of the faces of the conversion element, the heat-sensitive layer having a reflection coefficient for the radiation to be detected that increases as a function of its temperature.