公开(公告)号：US10861931B2

公开(公告)日：2020-12-08

申请号：US15372505

申请日：2016-12-08

申请人： Cree, Inc.

发明人： Daniel J. Lichtenwalner ,  Edward R. Van Brunt ,  Brett Hull

IPC分类号： H01L29/06 ,  H01L29/10 ,  H01L29/78 ,  H01L21/04 ,  H01L29/66 ,  H01L29/739 ,  H01L29/16 ,  H01L29/08

摘要： Semiconductor devices include a semiconductor layer structure comprising a drift region that includes a wide band-gap semiconductor material. A shielding pattern is provided in an upper portion of the drift region in an active region of the device and a termination structure is provided in the upper portion of the drift region in a termination region of the device. A gate trench extends into an upper surface of the semiconductor layer structure. The semiconductor layer structure includes a semiconductor layer that extends above and at least partially covers the termination structure.

公开(公告)号：US20190013416A1

公开(公告)日：2019-01-10

申请号：US15642634

申请日：2017-07-06

申请人： Cree, Inc.

发明人： Qingchun Zhang ,  Edward R. Van Brunt ,  Brett Hull ,  Scott Thomas Allen

IPC分类号： H01L29/872 ,  H01L29/66 ,  H01L29/06

摘要： A Schottky diode includes a drift region, a channel in an upper portion of the drift region, and first and second adjacent blocking junctions in the upper portion of the drift region that define the channel therebetween. The drift region and channel are doped with dopants having a first conductivity type, and the first and second blocking junctions doped with dopants having a second conductivity type that is opposite the first conductivity type. The blocking junctions extend at least one micron into the upper portion of the drift region and are spaced apart from each other by less than 3.0 microns.

公开(公告)号：US10998418B2

公开(公告)日：2021-05-04

申请号：US16413921

申请日：2019-05-16

申请人： Cree, Inc.

发明人： Edward R. Van Brunt ,  Daniel J. Lichtenwalner ,  Shadi Sabri

IPC分类号： H01L29/51 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78

摘要： Power semiconductor devices include multi-layer inter-metal dielectric patterns that include at least one reflowed dielectric material pattern and at least one non-reflowable dielectric material pattern. In other embodiments, power semiconductor devices include reflowed inter-metal dielectric patterns that are formed using sacrificial structures such as dams to limit the lateral spread of the reflowable dielectric material of the inter-metal dielectric pattern during the reflow process. The inter-metal dielectric patterns may have improved shapes and performance.

公开(公告)号：US20210098568A1

公开(公告)日：2021-04-01

申请号：US16952757

申请日：2020-11-19

申请人： Cree, Inc.

发明人： Daniel J. Lichtenwalner ,  Edward R. Van Brunt ,  Brett Hull

IPC分类号： H01L29/06 ,  H01L29/10 ,  H01L29/78 ,  H01L21/04 ,  H01L29/66 ,  H01L29/739

摘要： Semiconductor devices include a semiconductor layer structure comprising a drift region that includes a wide band-gap semiconductor material. A shielding pattern is provided in an upper portion of the drift region in an active region of the device and a termination structure is provided in the upper portion of the drift region in a termination region of the device. A gate trench extends into an upper surface of the semiconductor layer structure. The semiconductor layer structure includes a semiconductor layer that extends above and at least partially covers the termination structure.

公开(公告)号：US10510905B2

公开(公告)日：2019-12-17

申请号：US15642634

申请日：2017-07-06

申请人： Cree, Inc.

发明人： Qingchun Zhang ,  Edward R. Van Brunt ,  Brett Hull ,  Scott Thomas Allen

IPC分类号： H01L29/872 ,  H01L29/66 ,  H01L29/06 ,  H01L29/16 ,  H01L29/36

摘要： A Schottky diode includes a drift region, a channel in an upper portion of the drift region, and first and second adjacent blocking junctions in the upper portion of the drift region that define the channel therebetween. The drift region and channel are doped with dopants having a first conductivity type, and the first and second blocking junctions doped with dopants having a second conductivity type that is opposite the first conductivity type. The blocking junctions extend at least one micron into the upper portion of the drift region and are spaced apart from each other by less than 3.0 microns.

公开(公告)号：US20180166530A1

公开(公告)日：2018-06-14

申请号：US15372505

申请日：2016-12-08

申请人： Cree, Inc.

发明人： Daniel J. Lichtenwalner ,  Edward R. Van Brunt ,  Brett Hull

IPC分类号： H01L29/06 ,  H01L29/16 ,  H01L29/10 ,  H01L29/78 ,  H01L21/04 ,  H01L29/66

摘要： Semiconductor devices include a semiconductor layer structure comprising a drift region that includes a wide band-gap semiconductor material. A shielding pattern is provided in an upper portion of the drift region in an active region of the device and a termination structure is provided in the upper portion of the drift region in a termination region of the device. A gate trench extends into an upper surface of the semiconductor layer structure. The semiconductor layer structure includes a semiconductor layer that extends above and at least partially covers the termination structure.

公开(公告)号：US09887287B1

公开(公告)日：2018-02-06

申请号：US15372516

申请日：2016-12-08

申请人： Cree, Inc.

发明人： Daniel J. Lichtenwalner ,  Edward R. Van Brunt ,  Brett Hull ,  Alexander V. Suvorov ,  Craig Capell

IPC分类号： H01L29/423 ,  H01L29/74 ,  H01L29/80 ,  H01L21/337 ,  H01L21/336 ,  H01L29/78 ,  H01L29/06 ,  H01L27/088 ,  H01L29/66

CPC分类号： H01L29/7813 ,  H01L27/088 ,  H01L29/0623 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811

摘要： Semiconductor devices include a semiconductor layer structure having a wide band-gap semiconductor drift region having a first conductivity type. A gate trench is provided in an upper portion of the semiconductor layer structure, the gate trench having first and second opposed sidewalls that extend in a first direction in the upper portion of the semiconductor layer structure. These devices further include a deep shielding pattern having a second conductivity type that is opposite the first conductivity type in the semiconductor layer structure underneath a bottom surface of the gate trench, and a deep shielding connection pattern that has the second conductivity type in the first sidewall of the gate trench. The devices include a semiconductor channel region that has the first conductivity type in the second sidewall of the gate trench.