公开(公告)号：US20210225652A1

公开(公告)日：2021-07-22

申请号：US17225384

申请日：2021-04-08

Applicant: Cree, Inc.

Inventor： Matthew Donofrio ,  John Edmond ,  Hua-Shuang Kong ,  Elif Balkas

IPC: H01L21/18 ,  H01L21/20 ,  B23K26/00 ,  H01L21/02

Abstract: A method for removing a portion of a crystalline material (e.g., SiC) substrate includes joining a surface of the substrate to a rigid carrier (e.g., >800 μm thick), with a subsurface laser damage region provided within the substrate at a depth relative to the surface. Adhesive material having a glass transition temperature above 25° C. may bond the substrate to the carrier. The crystalline material is fractured along the subsurface laser damage region to produce a bonded assembly including the carrier and a portion of the crystalline material. Fracturing of the crystalline material may be promoted by (i) application of a mechanical force proximate to at least one carrier edge to impart a bending moment in the carrier; (ii) cooling the carrier when the carrier has a greater coefficient of thermal expansion than the crystalline material; and/or (iii) applying ultrasonic energy to the crystalline material.

公开(公告)号：US11024501B2

公开(公告)日：2021-06-01

申请号：US16274045

申请日：2019-02-12

Applicant: Cree, Inc.

Inventor： Matthew Donofrio ,  John Edmond ,  Hua-Shuang Kong ,  Elif Balkas

IPC: C30B33/02 ,  H01L21/18 ,  H01L21/20 ,  B23K26/00 ,  H01L21/02

Abstract: A method for removing a portion of a crystalline material (e.g., SiC) substrate includes joining a surface of the substrate to a rigid carrier (e.g., >800 μm thick), with a subsurface laser damage region provided within the substrate at a depth relative to the surface. Adhesive material having a glass transition temperature above 25° C. may bond the substrate to the carrier. The crystalline material is fractured along the subsurface laser damage region to produce a bonded assembly including the carrier and a portion of the crystalline material. Fracturing of the crystalline material may be promoted by (i) application of a mechanical force proximate to at least one carrier edge to impart a bending moment in the carrier; (ii) cooling the carrier when the carrier has a greater coefficient of thermal expansion than the crystalline material; and/or (iii) applying ultrasonic energy to the crystalline material.

公开(公告)号：US20160189954A1

公开(公告)日：2016-06-30

申请号：US14587024

申请日：2014-12-31

Applicant: Cree, Inc.

Inventor： Hua-Shuang Kong ,  John A. Edmond ,  Matthew Donofrio ,  Michael J. Bergmann ,  David B. Slater, JR.

IPC: H01L21/02 ,  H01L21/683 ,  H01L21/78

CPC classification number: H01L21/6835 ,  H01L21/78 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6835 ,  H01L2221/68381

Abstract: Semiconductor devices are fabricated by providing a growth substrate having a thickness within a preselected range and then bonding a lower surface of the growth substrate to an upper surface of the carrier substrate to form a composite substrate. One or more semiconductor growth processes are performed at one or more growth temperatures of at least 500° C. to form one or more semiconductor layers on an upper surface of the composite substrate. The growth substrate is separated from the carrier substrate after the one or more semiconductor growth processes are completed so that the carrier substrate may be reused with a second growth substrate.

Abstract translation: 通过提供具有预定范围内的厚度的生长衬底然后将生长衬底的下表面粘合到载体衬底的上表面以形成复合衬底来制造半导体器件。 在至少500℃的一个或多个生长温度下进行一个或多个半导体生长工艺，以在复合衬底的上表面上形成一个或多个半导体层。 在一个或多个半导体生长过程完成之后，将生长衬底与载体衬底分离，使得载体衬底可以与第二生长衬底重复使用。

公开(公告)号：US20200211850A1

公开(公告)日：2020-07-02

申请号：US16274045

申请日：2019-02-12

Applicant: Cree, Inc.

Inventor： Matthew Donofrio ,  John Edmond ,  Hua-Shuang Kong ,  Elif Balkas

IPC: H01L21/18 ,  H01L21/02 ,  B23K26/00 ,  H01L21/20

Abstract: A method for removing a portion of a crystalline material (e.g., SiC) substrate includes joining a surface of the substrate to a rigid carrier (e.g., >800 μm thick), with a subsurface laser damage region provided within the substrate at a depth relative to the surface. Adhesive material having a glass transition temperature above 25° C. may bond the substrate to the carrier. The crystalline material is fractured along the subsurface laser damage region to produce a bonded assembly including the carrier and a portion of the crystalline material. Fracturing of the crystalline material may be promoted by (i) application of a mechanical force proximate to at least one carrier edge to impart a bending moment in the carrier; (ii) cooling the carrier when the carrier has a greater coefficient of thermal expansion than the crystalline material; and/or (iii) applying ultrasonic energy to the crystalline material.