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    Laser-assisted method for parting crystalline material
    1.
    发明授权
    Laser-assisted method for parting crystalline material 有权

    公开(公告)号：US10562130B1

    公开(公告)日：2020-02-18

    申请号：US16410487

    申请日：2019-05-13

    申请人： Cree, Inc.

    发明人： Matthew Donofrio ,  John Edmond ,  Harshad Golakia ,  Eric Mayer

    IPC分类号： H01L21/67 ,  H01L21/268 ,  H01L29/16 ,  B23K26/53 ,  B23K26/03 ,  B28D5/00 ,  B23K26/40 ,  H01L21/02

    摘要： A crystalline material processing method includes forming subsurface laser damage at a first average depth position to form cracks in the substrate interior propagating outward from at least one subsurface laser damage pattern, followed by imaging the substrate top surface, analyzing the image to identify a condition indicative of presence of uncracked regions within the substrate, and taking one or more actions responsive to the analyzing. One potential action includes changing an instruction set for producing subsequent laser damage formation (at second or subsequent average depth positions), without necessarily forming additional damage at the first depth position. Another potential action includes forming additional subsurface laser damage at the first depth position. The substrate surface is illuminated with a diffuse light source arranged perpendicular to a primary substrate flat and positioned to a first side of the substrate, and imaged with an imaging device positioned to an opposing second side of the substrate.

    LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES
    4.
    发明申请
    LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES 有权
    具有减少电流结构的发光装置

    公开(公告)号：US20130292639A1

    公开(公告)日：2013-11-07

    申请号：US13856928

    申请日：2013-04-04

    申请人： Cree, Inc.

    发明人： David Todd Emerson ,  Kevin Haberern ,  Michael John Bergmann ,  David B. Slater, JR. ,  Matthew Donofrio ,  John Edmond

    IPC分类号： H01L33/14

    CPC分类号： H01L33/145 ,  H01L24/05 ,  H01L33/14 ,  H01L33/38 ,  H01L2224/49107 ,  H01L2933/0016

    摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer and an active region between the p-type semiconductor layer and the n-type semiconductor layer. A bond pad is provided on one of the p-type semiconductor layer or the n-type semiconductor layer, opposite the active region, the bond pad being electrically connected to the one of the p-type semiconductor layer or the n-type semiconductor layer. A conductive finger extends from and is electrically connected to the bond pad. A reduced conductivity region is provided in the light emitting device that is aligned with the conductive finger. A reflector may also be provided between the bond pad and the reduced conductivity region. A reduced conductivity region may also be provided in the light emitting device that is not aligned with the bond pad.

    摘要翻译： 发光器件包括p型半导体层，n型半导体层和p型半导体层和n型半导体层之间的有源区。 在与有源区相对的p型半导体层或n型半导体层之一上设置接合焊盘，所述接合焊盘与p型半导体层或n型半导体层中的一者电连接 。 导电指状物从接合焊盘延伸并与其电连接。 在与导电指状物对准的发光器件中设置降低的导电性区域。 还可以在接合焊盘和减小的导电区域之间设置反射器。 还可以在不与接合焊盘对准的发光器件中提供降低的导电性区域。

    SILICON CARBIDE WAFERS WITH RELAXED POSITIVE BOW AND RELATED METHODS
    5.
    发明申请
    SILICON CARBIDE WAFERS WITH RELAXED POSITIVE BOW AND RELATED METHODS 有权

    公开(公告)号：US20210170632A1

    公开(公告)日：2021-06-10

    申请号：US17178532

    申请日：2021-02-18

    申请人： Cree, Inc.

    发明人： Simon Bubel ,  Matthew Donofrio ,  John Edmond ,  Ian Currier

    IPC分类号： B28D5/00 ,  H01L29/16

    摘要： Silicon carbide (SiC) wafers and related methods are disclosed that include intentional or imposed wafer shapes that are configured to reduce manufacturing problems associated with deformation, bowing, or sagging of such wafers due to gravitational forces or from preexisting crystal stress. Intentional or imposed wafer shapes may comprise SiC wafers with a relaxed positive bow from silicon faces thereof. In this manner, effects associated with deformation, bowing, or sagging for SiC wafers, and in particular for large area SiC wafers, may be reduced. Related methods for providing SiC wafers with relaxed positive bow are disclosed that provide reduced kerf losses of bulk crystalline material. Such methods may include laser-assisted separation of SiC wafers from bulk crystalline material.

    Laser-assisted method for parting crystalline material
    7.
    发明授权
    Laser-assisted method for parting crystalline material 有权

    公开(公告)号：US10421158B1

    公开(公告)日：2019-09-24

    申请号：US16274064

    申请日：2019-02-12

    申请人： Cree, Inc.

    发明人： Matthew Donofrio ,  John Edmond ,  Harshad Golakia

    IPC分类号： H01L29/16 ,  H01L21/67 ,  B23K26/53 ,  H01L21/268 ,  H01L21/683 ,  H01L21/02 ,  H01L21/82 ,  H01L21/306 ,  B23K26/00 ,  B23K26/06 ,  B23K26/08 ,  B23K26/359 ,  B23K103/00 ,  B23K101/40

    摘要： A method for processing a crystalline substrate to form multiple patterns of subsurface laser damage facilitates subsequent fracture of the substrate to yield first and second substrate portions of reduced thickness. Multiple (e.g., two, three, or more) groups of parallel lines of multiple subsurface laser damage patterns may be sequentially interspersed with one another, with at least some lines of different groups not crossing one another. Certain implementations include formation of multiple subsurface laser damage patterns including groups of parallel lines that are non-parallel to one another, but with each line remaining within ±5 degrees of perpendicular to the direction of a hexagonal crystal structure of a material of the substrate. Further methods involve formation of initial and subsequent subsurface laser damage patterns that are centered at different depths within an interior of a substrate, with the subsurface laser damage patterns being registered with one another and having vertical extents that are overlapping.

    HIGH DENSITY PIXELATED LED AND DEVICES AND METHODS THEREOF
    8.
    发明申请
    HIGH DENSITY PIXELATED LED AND DEVICES AND METHODS THEREOF 审中-公开

    公开(公告)号：US20170294417A1

    公开(公告)日：2017-10-12

    申请号：US15399729

    申请日：2017-01-05

    申请人： Cree, Inc.

    发明人： John Edmond ,  Matthew Donofrio ,  Jesse Reiherzer ,  Peter Scott Andrews ,  Joseph G. Clark ,  Kevin Haberern

    IPC分类号： H01L25/075 ,  H01L33/62 ,  H01L33/60 ,  H01L25/00 ,  H01L27/15 ,  H01L33/50

    摘要： At least one array of LEDs (e.g., in a flip chip configuration) is supported by a substrate having a light extraction surface overlaid with at least one lumiphoric material. Light segregation elements registered with gaps between LEDs are configured to reduce interaction between emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements may be formed by mechanical sawing or etching to define grooves or recesses in a substrate, and filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to a substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.

    Light emitting devices having current reducing structures
    9.
    发明授权
    Light emitting devices having current reducing structures 有权
    具有电流还原结构的发光器件

    公开(公告)号：US08704240B2

    公开(公告)日：2014-04-22

    申请号：US13856928

    申请日：2013-04-04

    申请人： Cree, Inc.

    发明人： David Todd Emerson ,  Kevin Haberern ,  Michael John Bergmann ,  David B. Slater, Jr. ,  Matthew Donofrio ,  John Edmond

    IPC分类号： H01L33/00

    CPC分类号： H01L33/145 ,  H01L24/05 ,  H01L33/14 ,  H01L33/38 ,  H01L2224/49107 ,  H01L2933/0016

    摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer and an active region between the p-type semiconductor layer and the n-type semiconductor layer. A bond pad is provided on one of the p-type semiconductor layer or the n-type semiconductor layer, opposite the active region, the bond pad being electrically connected to the one of the p-type semiconductor layer or the n-type semiconductor layer. A conductive finger extends from and is electrically connected to the bond pad. A reduced conductivity region is provided in the light emitting device that is aligned with the conductive finger. A reflector may also be provided between the bond pad and the reduced conductivity region. A reduced conductivity region may also be provided in the light emitting device that is not aligned with the bond pad.

    摘要翻译： 发光器件包括p型半导体层，n型半导体层和p型半导体层和n型半导体层之间的有源区。 在与有源区相对的p型半导体层或n型半导体层之一上设置接合焊盘，所述接合焊盘与p型半导体层或n型半导体层中的一者电连接 。 导电指状物从接合焊盘延伸并与其电连接。 在与导电指状物对准的发光器件中设置降低的导电性区域。 还可以在接合焊盘和减小的导电区域之间设置反射器。 还可以在不与接合焊盘对准的发光器件中提供降低的导电性区域。