METHODS OF PERFORMING SEMICONDUCTOR GROWTH USING REUSABLE CARRIER SUBSTRATES AND RELATED CARRIER SUBSTRATES
    2.
    发明申请
    METHODS OF PERFORMING SEMICONDUCTOR GROWTH USING REUSABLE CARRIER SUBSTRATES AND RELATED CARRIER SUBSTRATES 审中-公开
    使用可重复载体基板和相关载体基板执行半导体生长的方法

    公开(公告)号:US20160189954A1

    公开(公告)日:2016-06-30

    申请号:US14587024

    申请日:2014-12-31

    Applicant: Cree, Inc.

    Abstract: Semiconductor devices are fabricated by providing a growth substrate having a thickness within a preselected range and then bonding a lower surface of the growth substrate to an upper surface of the carrier substrate to form a composite substrate. One or more semiconductor growth processes are performed at one or more growth temperatures of at least 500° C. to form one or more semiconductor layers on an upper surface of the composite substrate. The growth substrate is separated from the carrier substrate after the one or more semiconductor growth processes are completed so that the carrier substrate may be reused with a second growth substrate.

    Abstract translation: 通过提供具有预定范围内的厚度的生长衬底然后将生长衬底的下表面粘合到载体衬底的上表面以形成复合衬底来制造半导体器件。 在至少500℃的一个或多个生长温度下进行一个或多个半导体生长工艺,以在复合衬底的上表面上形成一个或多个半导体层。 在一个或多个半导体生长过程完成之后,将生长衬底与载体衬底分离,使得载体衬底可以与第二生长衬底重复使用。

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