Abstract:
Light emitting devices and components having excellent chemical resistance and related methods are disclosed. In one embodiment, an LED device or package with an encapsulant material or lens disposed over at least a portion of the LED device or package and a poly(methyl) acrylate-silicon containing barrier coating at least partially disposed over the encapsulant or the lens provides corrosion protection to corrodible metals and/or moisture protection to moisture sensitive components.
Abstract:
Semiconductor devices are fabricated by providing a growth substrate having a thickness within a preselected range and then bonding a lower surface of the growth substrate to an upper surface of the carrier substrate to form a composite substrate. One or more semiconductor growth processes are performed at one or more growth temperatures of at least 500° C. to form one or more semiconductor layers on an upper surface of the composite substrate. The growth substrate is separated from the carrier substrate after the one or more semiconductor growth processes are completed so that the carrier substrate may be reused with a second growth substrate.
Abstract:
Light emitting devices and components having excellent chemical resistance and related methods are disclosed. In one embodiment, an LED device or package with an encapsulant material or lens disposed over at least a portion of the LED device or package and a poly(methyl) acrylate-silicon containing barrier coating at least partially disposed over the encapsulant or the lens provides corrosion protection to corrodible metals and/or moisture protection to moisture sensitive components.