公开(公告)号：USRE46588E1

公开(公告)日：2017-10-24

申请号：US14743528

申请日：2015-06-18

Applicant: Cree, Inc.

Inventor： John Adam Edmond ,  Kathleen Marie Doverspike ,  Hua-shuang Kong ,  Michael John Bergmann

IPC: H01L33/00 ,  H01L33/32 ,  H01S5/323 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/343

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/32341

Abstract: The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer positioned between a first n-type Group III nitride cladding layer and a second n-type Group III nitride cladding layer, the respective bandgaps of the first and second n-type cladding layers being greater than the bandgap of the active layer. The semiconductor structure further includes a p-type Group III nitride layer, which is positioned in the semiconductor structure such that the second n-type cladding layer is between the p-type layer and the active layer.

公开(公告)号：USRE46589E1

公开(公告)日：2017-10-24

申请号：US14797980

申请日：2015-07-13

Applicant: Cree, Inc.

Inventor： John Adam Edmond ,  Kathleen Marie Doverspike ,  Hua-shuang Kong ,  Michael John Bergmann ,  David Todd Emerson

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/02 ,  H01S5/343 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/14

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/06

Abstract: The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The structure includes a first n-type cladding layer of AlxInyGa1−x−yN, where 0≦x≦1 and 0≦y