公开(公告)号：US10431422B2

公开(公告)日：2019-10-01

申请号：US15841167

申请日：2017-12-13

Applicant: D2S, Inc.

Inventor： Akira Fujimura ,  Kazuyuki Hagiwara ,  Robert C. Pack

IPC: H01J37/317 ,  G03F1/78 ,  G03F7/20 ,  H01J37/302 ,  G03F1/36

Abstract: A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern.

公开(公告)号：US09038003B2

公开(公告)日：2015-05-19

申请号：US13862476

申请日：2013-04-15

Applicant: D2S, Inc.

Inventor： Ryan Pearman ,  Robert C. Pack ,  Akira Fujimura

IPC: G06F17/50 ,  G03F1/36

CPC classification number: G06F17/50 ,  G03F1/36

Abstract: A method for mask data preparation or mask process correction is disclosed in which a set of charged particle beam shots is determined which is capable of forming a pattern on a surface, wherein critical dimension uniformity (CDU) of the pattern is optimized. In some embodiments the CDU is optimized by varying at least two factors. In other embodiments, model-based techniques are used. In yet other embodiments, the surface is a reticle to be used in an optical lithographic process to form a pattern on a wafer, and CDU on the wafer is optimized.

Abstract translation: 公开了一种用于掩模数据准备或掩模处理校正的方法，其中确定一组能够在表面上形成图案的带电粒子束射击，其中优化了图案的临界尺寸均匀性（CDU）。 在一些实施例中，通过改变至少两个因素来优化CDU。 在其他实施例中，使用基于模型的技术。 在其它实施例中，该表面是用于光学平版印刷工艺中以在晶片上形成图案的掩模版，并且晶片上的CDU被优化。

公开(公告)号：US20140359542A1

公开(公告)日：2014-12-04

申请号：US14331008

申请日：2014-07-14

Applicant: D2S, INC.

Inventor： Akira Fujimura ,  Kazuyuki Hagiwara ,  Robert C. Pack

IPC: G06F17/50 ,  H01J37/317

CPC classification number: H01J37/3174 ,  G03F1/36 ,  G03F1/78 ,  G03F7/2063 ,  H01J37/3023 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/31762 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31774 ,  H01J2237/31776

Abstract: A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern.

公开(公告)号：US20130283216A1

公开(公告)日：2013-10-24

申请号：US13862476

申请日：2013-04-15

Applicant: D2S, INC.

Inventor： Ryan Pearman ,  Robert C. Pack ,  Akira Fujimura

IPC: G06F17/50

CPC classification number: G06F17/50 ,  G03F1/36

Abstract: A method for mask data preparation or mask process correction is disclosed in which a set of charged particle beam shots is determined which is capable of forming a pattern on a surface, wherein critical dimension uniformity (CDU) of the pattern is optimized. In some embodiments the CDU is optimized by varying at least two factors. In other embodiments, model-based techniques are used. In yet other embodiments, the surface is a reticle to be used in an optical lithographic process to form a pattern on a wafer, and CDU on the wafer is optimized.

Abstract translation: 公开了一种用于掩模数据准备或掩模处理校正的方法，其中确定一组能够在表面上形成图案的带电粒子束射击，其中优化了图案的临界尺寸均匀性（CDU）。 在一些实施例中，通过改变至少两个因素来优化CDU。 在其他实施例中，使用基于模型的技术。 在其它实施例中，该表面是用于光学平版印刷工艺中以在晶片上形成图案的掩模版，并且晶片上的CDU被优化。

公开(公告)号：US09859100B2

公开(公告)日：2018-01-02

申请号：US15157278

申请日：2016-05-17

Applicant: D2S, Inc.

Inventor： Akira Fujimura ,  Kazuyuki Hagiwara ,  Robert C. Pack

IPC: H01J37/317 ,  H01J37/302 ,  G03F1/36 ,  G03F7/20 ,  G03F1/78

CPC classification number: H01J37/3174 ,  G03F1/36 ,  G03F1/78 ,  G03F7/2063 ,  H01J37/3023 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/31762 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31774 ,  H01J2237/31776

Abstract: A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern.

公开(公告)号：US20140129997A1

公开(公告)日：2014-05-08

申请号：US13801571

申请日：2013-03-13

Applicant: D2S, INC.

Inventor： Akira Fujimura ,  Kazuyuki Hagiwara ,  Robert C. Pack

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/36 ,  G03F1/78 ,  G06F17/5009 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31771 ,  H01J2237/31776

Abstract: A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern.

Abstract translation: 公开了一种用于掩模过程校正或使用带电粒子束光刻在掩模版上形成图案的方法，其中将掩模版用于光学平版印刷工艺以在晶片上形成图案，其中晶片图案的灵敏度由 相对于标线图案的尺寸变化，并且对图案曝光信息进行修改，以增加晶片图案的灵敏度高的标线图案的边缘斜率。 还公开了一种用于压裂或掩模数据准备的方法，其中确定了可以使用带电粒子束光刻在掩模版上形成图案的图案曝光信息，其中掩模版将用于光学平版印刷工艺以在图案上形成图案 并且相对于标线图案的尺寸的变化计算晶片图案的灵敏度。

公开(公告)号：US20180108513A1

公开(公告)日：2018-04-19

申请号：US15841167

申请日：2017-12-13

Applicant: D2S, Inc.

Inventor： Akira Fujimura ,  Kazuyuki Hagiwara ,  Robert C. Pack

IPC: H01J37/317 ,  G03F1/78 ,  G03F7/20 ,  H01J37/302 ,  G03F1/36

CPC classification number: H01J37/3174 ,  G03F1/36 ,  G03F1/78 ,  G03F7/2063 ,  H01J37/3023 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/31762 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31774 ,  H01J2237/31776

Abstract: A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern.

公开(公告)号：US20160260581A1

公开(公告)日：2016-09-08

申请号：US15157278

申请日：2016-05-17

Applicant: D2S, Inc.

Inventor： Akira Fujimura ,  Kazuyuki Hagiwara ,  Robert C. Pack

IPC: H01J37/317 ,  H01J37/302

CPC classification number: H01J37/3174 ,  G03F1/36 ,  G03F1/78 ,  G03F7/2063 ,  H01J37/3023 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/31762 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31774 ,  H01J2237/31776

Abstract: A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern.

Abstract translation: 公开了一种用于掩模过程校正或使用带电粒子束光刻在掩模版上形成图案的方法，其中将掩模版用于光学平版印刷工艺以在晶片上形成图案，其中晶片图案的灵敏度由 相对于标线图案的尺寸变化，并且对图案曝光信息进行修改，以增加晶片图案的灵敏度高的标线图案的边缘斜率。 还公开了一种用于压裂或掩模数据准备的方法，其中确定了可以使用带电粒子束光刻在掩模版上形成图案的图案曝光信息，其中掩模版将用于光学平版印刷工艺以在图案上形成图案 并且相对于标线图案的尺寸的变化计算晶片图案的灵敏度。

公开(公告)号：US09343267B2

公开(公告)日：2016-05-17

申请号：US14331008

申请日：2014-07-14

Applicant: D2S, Inc.

Inventor： Akira Fujimura ,  Kazuyuki Hagiwara ,  Robert C. Pack

IPC: G06F17/50 ,  H01J37/317 ,  G03F1/36 ,  G03F7/20

CPC classification number: H01J37/3174 ,  G03F1/36 ,  G03F1/78 ,  G03F7/2063 ,  H01J37/3023 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/31762 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31774 ,  H01J2237/31776

Abstract: A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern.

Abstract translation: 公开了一种用于掩模过程校正或使用带电粒子束光刻在掩模版上形成图案的方法，其中将掩模版用于光学平版印刷工艺以在晶片上形成图案，其中晶片图案的灵敏度由 相对于标线图案的尺寸变化，并且对图案曝光信息进行修改，以增加晶片图案的灵敏度高的标线图案的边缘斜率。 还公开了一种用于压裂或掩模数据准备的方法，其中确定了可以使用带电粒子束光刻在掩模版上形成图案的图案曝光信息，其中掩模版将用于光学平版印刷工艺以在图案上形成图案 并且相对于标线图案的尺寸的变化计算晶片图案的灵敏度。

公开(公告)号：US08959463B2

公开(公告)日：2015-02-17

申请号：US13801554

申请日：2013-03-13

Applicant: D2S, Inc.

Inventor： Akira Fujimura ,  Kazuyuki Hagiwara ,  Robert C. Pack ,  Anatoly Aadamov

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/36 ,  G03F1/78 ,  G06F17/5009 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31771 ,  H01J2237/31776

Abstract: A method for mask process correction or forming a pattern on a resist-coated reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where the sensitivity of the wafer pattern is calculated with respect to changes in resist exposure of the reticle, and where the pattern exposure information is modified to lower the calculated sensitivity. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a resist-coated reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where the sensitivity of the wafer pattern is calculated with respect to changes in resist exposure of the reticle.

Abstract translation: 公开了一种用于掩模过程校正或使用带电粒子束光刻在抗蚀剂涂覆的掩模版上形成图案的方法，其中掩模版将用于光学平版印刷工艺以在晶片上形成图案，其中晶片的灵敏度 相对于掩模版的抗蚀剂曝光的变化计算图案，并且改变图案曝光信息以降低计算的灵敏度。 还公开了一种用于压裂或掩模数据准备的方法，其中确定了可以使用带电粒子束光刻在抗蚀剂涂覆的掩模版上形成图案的图案曝光信息，其中掩模版将用于光学平版印刷工艺以形成 图案，并且其中相对于掩模版的抗蚀剂曝光的变化计算晶片图案的灵敏度。