公开(公告)号：US12211902B2

公开(公告)日：2025-01-28

申请号：US17520882

申请日：2021-11-08

Applicant: DENSO CORPORATION

Inventor： Masato Noborio ,  Takehiro Kato ,  Yusuke Yamashita

IPC: H01L29/10 ,  H01L21/04 ,  H01L21/76 ,  H01L21/761 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

Abstract: In a semiconductor device, a source region is made of an epitaxial layer so as to reduce variation in thickness of a base region and variation in a threshold value. Outside of a cell part, a side surface of a gate trench is inclined relative to a normal direction to a main surface of a substrate, as compared with a side surface of a gate trench in the cell part that is provided by the epitaxial layer of the source region being in contact with the base region.

公开(公告)号：US10923395B2

公开(公告)日：2021-02-16

申请号：US16511345

申请日：2019-07-15

Applicant: DENSO CORPORATION

Inventor： Yasushi Urakami ,  Takehiro Kato ,  Sachiko Aoi

IPC: H01L29/423 ,  H01L21/768 ,  H01L21/02 ,  H01L21/28 ,  H01L29/06 ,  H01L29/16 ,  H01L29/417 ,  H01L29/78

Abstract: In a semiconductor device, a semiconductor element is formed in a semiconductor, an interlayer insulating film having a contact hole and containing at least one of phosphorus and boron is disposed above the semiconductor, a metal electrode is disposed above the interlayer insulating film and is connected to the semiconductor element through the contact hole, and the interlayer insulating film is filled with hydrogen.

公开(公告)号：US12057498B2

公开(公告)日：2024-08-06

申请号：US17410044

申请日：2021-08-24

Applicant: DENSO CORPORATION

Inventor： Yuichi Takeuchi ,  Katsumi Suzuki ,  Yusuke Yamashita ,  Takehiro Kato

IPC: H01L29/78 ,  H01L21/02 ,  H01L21/04 ,  H01L21/66 ,  H01L29/08 ,  H01L29/10 ,  H01L29/16 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/781 ,  H01L21/02057 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/046 ,  H01L22/14 ,  H01L29/086 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/7813

Abstract: A semiconductor device includes a semiconductor element having a substrate, a drift layer, a base region, a source region, trench gate structures, an interlayer insulating film, a source electrode, and a drain electrode. The substrate is made of silicon carbide. The drift layer is disposed on the substrate and has an impurity concentration lower than the substrate. The base region is made of silicon carbide and disposed on the drift layer. The source region is made of silicon carbide having an impurity concentration higher than the drift layer. Each trench gate structure has a gate trench, a gate insulating film, and a gate electrode. The interlayer insulating film covers the gate electrode and the gate insulating film. The source electrode is in ohmic-contact with the source region. The drain electrode is disposed on a rear surface of the substrate.