公开(公告)号：US12071709B2

公开(公告)日：2024-08-27

申请号：US18362117

申请日：2023-07-31

申请人： DENSO CORPORATION

发明人： Isaho Kamata ,  Hidekazu Tsuchida ,  Norihiro Hoshino ,  Yuichiro Tokuda ,  Takeshi Okamoto

IPC分类号： C30B25/00 ,  C30B25/02 ,  C30B25/10 ,  C30B29/36 ,  C30B33/00

CPC分类号： C30B29/36 ,  C30B25/00 ,  C30B25/02 ,  C30B25/10 ,  C30B33/00

摘要： A raw material gas is supplied to a space in which a silicon carbide seed crystal is placed. A silicon carbide single crystal is grown on the seed crystal by keeping a monosilane partial pressure at 4 kPa or more and heating the space to a temperature of 2400° C. to 2700° C. The temperature of the space and supply of the raw material gas are controlled such that a temperature gradient of a growth crystal surface of the silicon carbide single crystal in a radial direction is 0.1° C./mm or less, and a radius of curvature of the growth crystal surface is 4.5 m or more, thereby producing a silicon carbide single crystal ingot having a growth length of 3 mm or more and an internal stress of 10 MPa or less. The ingot is then cut into a silicon carbide single crystal wafer.

公开(公告)号：US11846040B2

公开(公告)日：2023-12-19

申请号：US17123338

申请日：2020-12-16

申请人： DENSO CORPORATION ,  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

发明人： Yuichiro Tokuda ,  Hideyuki Uehigashi ,  Norihiro Hoshino ,  Hidekazu Tsuchida ,  Isaho Kamata

IPC分类号： C30B29/36 ,  C30B25/20 ,  C01B32/956

CPC分类号： C30B29/36 ,  C30B25/20 ,  C01B32/956

摘要： A silicon carbide single crystal contains a heavy metal element having a specific gravity higher than a specific gravity of iron. An addition density of the heavy metal element at least in an outer peripheral portion of the silicon carbide single crystal is set to 1×1015 cm−3 or more.