公开(公告)号：US09214536B2

公开(公告)日：2015-12-15

申请号：US14077510

申请日：2013-11-12

Applicant: DENSO CORPORATION

Inventor： Shigeki Takahashi ,  Norihito Tokura ,  Satoshi Shiraki ,  Youichi Ashida ,  Akio Nakagawa

IPC: H01L29/66 ,  H01L29/739 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/40

CPC classification number: H01L29/7393 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/405 ,  H01L29/7394

Abstract: A lateral insulated gate bipolar transistor includes a semiconductor substrate including a drift layer, a collector region, a channel layer, an emitter region, a gate insulating layer, a gate electrode, a collector electrode, an emitter electrode, and a barrier layer. The barrier layer is disposed along either side of the collector region and is located to a depth deeper than a bottom of the channel layer. The barrier layer has an impurity concentration that is higher than an impurity concentration of the drift layer. The barrier layer has a first end close to the collector region and a second end far from the collector region. The first end is located between the channel layer and the collector region, and the second end is located on the bottom of the channel layer.

Abstract translation: 横向绝缘栅双极晶体管包括包括漂移层，集电极区域，沟道层，发射极区域，栅极绝缘层，栅电极，集电极，发射极和阻挡层的半导体衬底。 阻挡层沿着集电极区域的两侧设置，并且位于比通道层的底部更深的深度。 阻挡层的杂质浓度高于漂移层的杂质浓度。 阻挡层具有靠近集电极区域的第一端和远离集电极区域的第二端。 第一端位于沟道层和集电极区之间，第二端位于沟道层的底部。

公开(公告)号：US09263267B2

公开(公告)日：2016-02-16

申请号：US14547698

申请日：2014-11-19

Applicant: DENSO CORPORATION

Inventor： Jun Kawai ,  Norihito Tokura ,  Kazuhiko Sugiura

IPC: H01L21/20 ,  H01L21/04 ,  H01L29/16 ,  H01L21/22 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L21/0485 ,  H01L21/0455 ,  H01L21/22 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7827

Abstract: In a manufacturing method of a silicon carbide semiconductor device, a semiconductor substrate made of single crystal silicon carbide is prepared. At a portion of the semiconductor substrate where a first electrode is to be formed, a metal thin film made of electrode material including an impurity is formed. After the metal thin film is formed, the first electrode including a metal reaction layer in which the impurity is introduced is formed by irradiating the metal thin film with a laser light.

公开(公告)号：US08941122B2

公开(公告)日：2015-01-27

申请号：US13855072

申请日：2013-04-02

Applicant: DENSO CORPORATION

Inventor： Jun Kawai ,  Norihito Tokura ,  Kazuhiko Sugiura

IPC: H01L29/15 ,  H01L29/16 ,  H01L21/22 ,  H01L21/04 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L21/0485 ,  H01L21/0455 ,  H01L21/22 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7827

Abstract: In a manufacturing method of a silicon carbide semiconductor device, a semiconductor substrate made of single crystal silicon carbide is prepared. At a portion of the semiconductor substrate where a first electrode is to be formed, a metal thin film made of electrode material including an impurity is formed. After the metal thin film is formed, the first electrode including a metal reaction layer in which the impurity is introduced is formed by irradiating the metal thin film with a laser light.

Abstract translation: 在碳化硅半导体器件的制造方法中，制备由单晶碳化硅制成的半导体衬底。 在要形成第一电极的半导体衬底的一部分，形成由包括杂质的电极材料制成的金属薄膜。 在形成金属薄膜之后，通过用激光照射金属薄膜来形成包括引入杂质的金属反应层的第一电极。