公开(公告)号：US20240326165A1

公开(公告)日：2024-10-03

申请号：US18735595

申请日：2024-06-06

Applicant: DENSO CORPORATION

Inventor： Koichiro YASUDA ,  Ryota TAKAGI ,  Tomoki KAWAZU ,  Sodai NOMURA ,  Hideaki SHIRAI ,  Bahman SOLTANI ,  Shunsuke SOBAJIMA

IPC: B23K26/082 ,  B23K26/38

CPC classification number: B23K26/082 ,  B23K26/38

Abstract: A surface of one end side of an ingot in a height direction thereof is irradiated with a laser beam having a permeability to the ingot, thereby forming a peeling layer at a depth position corresponding to a thickness of the wafer from the surface. A laser scanning irradiating the laser beam is performed for a plurality of times changing the irradiation position in a second direction while causing an irradiation position of the laser beam to move in a first direction. With a single laser scanning, a plurality of laser beams are irradiated in which irradiation positions are different in the first direction and the second direction.

公开(公告)号：US20240326174A1

公开(公告)日：2024-10-03

申请号：US18735769

申请日：2024-06-06

Applicant: DENSO CORPORATION

Inventor： Koichiro YASUDA ,  Ryota TAKAGI ,  Tomoki KAWAZU ,  Sodai NOMURA ,  Hideaki SHIRAI ,  Bahman SOLTANI ,  Shunsuke SOBAJIMA

IPC: B23K26/53 ,  B23K26/082 ,  B23K26/70 ,  B23K101/40 ,  H01L21/67

CPC classification number: B23K26/53 ,  B23K26/082 ,  B23K26/707 ,  H01L21/67092 ,  B23K2101/40

Abstract: A wafer manufacturing method for obtaining a wafer from an ingot includes the following procedure, steps or processes. A surface of one end side of the ingot in a height direction thereof is irradiated with a laser beam to which the ingot has transparency, thereby forming a peeling layer at a depth position corresponding to a thickness of the wafer from the surface. At this moment, the laser beam is irradiated such that a frequency of irradiation in a facet region is higher than that in a non-facet region. A wafer precursor as a portion between the surface of the ingot and the peeling layer is peeled from the ingot at the peeling layer. A major surface of a peeling body having a plate like shape, the peeling body being obtained by the wafer peeling step, is planarized electrically, chemically and mechanically, thereby obtaining a wafer.

公开(公告)号：US20150083316A1

公开(公告)日：2015-03-26

申请号：US14491378

申请日：2014-09-19

Applicant: DENSO CORPORATION

Inventor： Hideaki SHIRAI ,  Tomohiro SHIMIZU ,  Yasuyuki OOKOUCHI

IPC: C04B37/02 ,  B32B37/06

CPC classification number: C04B37/021 ,  C04B37/005 ,  C04B2237/083 ,  C04B2237/36 ,  C04B2237/365 ,  C04B2237/403 ,  C04B2237/80 ,  C04B2237/84 ,  H05B3/141 ,  H05B3/42 ,  H05B2203/023

Abstract: A method of manufacturing a joint body of a ceramic body and a metal body includes a step of joining them together by passing a current to an abutment surface between them. The joining step includes a step of heating up the abutment surface to a temperature T1 within a temperature range between (Tr-220)° C. and (Tr-50)° C. in a period longer than 10 seconds, Tr being a recrystallization temperature of the metal body, a step of heating the abutment surface for a period longer than 5 seconds at a temperature T2 within a temperature range between Tm×0.3° C. and Tm×0.45° C., Tm being a melting point of the metal body, and a step of heating the abutment surface for a period longer than 3 seconds at a heating temperature higher than Tm×0.48° C. and lower than Tm×0.6° C.

Abstract translation: 制造陶瓷体和金属体的接合体的方法包括通过将电流传递到它们之间的邻接表面而将它们接合在一起的步骤。 接合步骤包括在长于10秒的时间内将邻接表面加热到在（Tr-220）℃和（Tr-50）℃之间的温度范围内的温度T1的步骤，Tr是重结晶 金属体的温度，在Tm×0.3℃〜Tm×0.45℃之间的温度范围内的温度T2下，将抵接面加热5秒以上的步骤，Tm为 金属体，以及在高于Tm×0.48℃并低于Tm×0.6℃的加热温度下将抵接表面加热3秒以上的步骤。

公开(公告)号：US20240146139A1

公开(公告)日：2024-05-02

申请号：US18405533

申请日：2024-01-05

Applicant: DENSO CORPORATION

Inventor： Kazuki KODA ,  Hideaki SHIRAI ,  Tsuguya SHIMOSAKAMOTO

IPC: H02K3/47 ,  H02K15/06

CPC classification number: H02K3/47 ,  H02K15/061

Abstract: A joined assembly comprises a wire bundle and a metallic member joined to the wire bundle. The wire bundle includes a bundle of a plurality of conductive wires which are isolated from each other using inter-wire insulating layers and adhered to each other, the inter-wire insulating layers being made from insulating resin. The wire bundle includes a head portion and a head extension. The head portion is arranged on a first side of the wire bundle in a lengthwise direction (Da) thereof. The head extension extends from the head portion to a second side of the wire bundle away from the first side in the lengthwise direction. The metallic member includes a metallic member connecting portion arranged in contact with the head extension. The conductive wires are kept adhered to each other through the inter-wire insulating layers in the head extension and fusion-joined in the head portion to a portion of the metallic member connecting portion. The head portion of the wire bundle has the inter-wire insulating layers removed therefrom.

公开(公告)号：US20190039178A1

公开(公告)日：2019-02-07

申请号：US16072970

申请日：2017-01-24

Applicant: DENSO CORPORATION

Inventor： Hideaki SHIRAI ,  Koichiro YASUDA

IPC: B23K26/06 ,  B23K26/073 ,  B23K26/388

Abstract: A method for manufacturing a member having a through hole includes a primary formation step, an intensity determination step, a laser modulation step, and a secondary formation step. The primary formation step includes radiating a laser beam to a workpiece member to form a pilot hole having a smaller inner diameter than the through hole while receiving light from the workpiece member at a light detection unit. The intensity determination step includes determining whether a light intensity is equal to or less than a predetermined threshold value. The laser modulation step includes modulating a spatial light phase of the laser beam the intensity of the light is equal to or less than the predetermined threshold value. The secondary formation step includes radiating the laser beam having the modulated spatial light phase to a peripheral part of the pilot hole to form the through hole.

公开(公告)号：US20230115673A1

公开(公告)日：2023-04-13

申请号：US17960847

申请日：2022-10-06

Applicant: DENSO CORPORATION ,  National University Corporation Saitama University

Inventor： Bahman SOLTANI ,  Koichiro YASUDA ,  Ryota TAKAGI ,  Tomoki KAWAZU ,  Shunsuke SOBAJIMA ,  Yutaro ISSHIKI ,  Sodai NOMURA ,  Hideaki SHIRAI ,  Yohei YAMADA ,  Junichi IKENO

IPC: B23K26/38 ,  B23K26/402

Abstract: A manufacturing method for wafers includes: radiating a laser beam to a planned cutoff surface where the ingot is to be cutoff; and forming, with the radiation of the laser beam, a plurality of reformed sections at the planned cutoff surface to extend a crack from the reformed section, thereby slicing wafers, wherein an energy density of the laser beam exceeds a reforming threshold. The energy density satisfies at least one of conditions of a peak value of the energy density is lower than or equal to 44 J/cm2, a rising rate of the energy density at a portion corresponding to the most shallow position where the energy density reaches the reforming threshold Eth is larger than or equal to 1000 J/cm3, and a range of depth where the energy density exceeds the reforming threshold is smaller than or equal to 30 μm.

公开(公告)号：US20170326676A1

公开(公告)日：2017-11-16

申请号：US15524029

申请日：2015-11-05

Applicant: DENSO CORPORATION

Inventor： Hideaki SHIRAI ,  Tsuyoshi HAYAKAWA ,  Yuusuke KATAOKA

IPC: B23K10/02 ,  B23K9/10 ,  B23K9/28 ,  B23K9/32

CPC classification number: B23K10/02 ,  B23K9/1006 ,  B23K9/167 ,  B23K9/28 ,  B23K9/296 ,  B23K9/324 ,  B23K9/325 ,  B23K10/006 ,  B23K37/0235

Abstract: Arc welding equipment for joining the objects at high speed and for reducing the strain of the objects after being joined is provided. The nozzle housing an electrode forming arc plasma is formed from a gas supply part and a gas suction part. The gas supply part has gas supply holes supplying gas outward in a radial direction of the arc plasma. The gas suction part suctions the gas supplied form the gas supply part. A pair of the gas supply holes, which are disposed so that the electrode is disposed therebetween, supply the gas of a first pressure to a position away from the electrode by a first distance. A pair of the gas supply holes, which are disposed so that the electrode is disposed therebetween other than the pair of the gas supply holes, supply the gas of a second pressure to a position away from the electrode by a second distance. The second distance is longer than the first distance. The gas of the second pressure is lower than that of the first pressure. Thereby, the arc plasma is compressed in a direction connecting the gas supply holes, and the arc plasma becomes long in a direction connecting the gas supply holes.