公开(公告)号：US20240326165A1

公开(公告)日：2024-10-03

申请号：US18735595

申请日：2024-06-06

申请人： DENSO CORPORATION

发明人： Koichiro YASUDA ,  Ryota TAKAGI ,  Tomoki KAWAZU ,  Sodai NOMURA ,  Hideaki SHIRAI ,  Bahman SOLTANI ,  Shunsuke SOBAJIMA

IPC分类号： B23K26/082 ,  B23K26/38

CPC分类号： B23K26/082 ,  B23K26/38

摘要： A surface of one end side of an ingot in a height direction thereof is irradiated with a laser beam having a permeability to the ingot, thereby forming a peeling layer at a depth position corresponding to a thickness of the wafer from the surface. A laser scanning irradiating the laser beam is performed for a plurality of times changing the irradiation position in a second direction while causing an irradiation position of the laser beam to move in a first direction. With a single laser scanning, a plurality of laser beams are irradiated in which irradiation positions are different in the first direction and the second direction.

公开(公告)号：US20240326174A1

公开(公告)日：2024-10-03

申请号：US18735769

申请日：2024-06-06

申请人： DENSO CORPORATION

发明人： Koichiro YASUDA ,  Ryota TAKAGI ,  Tomoki KAWAZU ,  Sodai NOMURA ,  Hideaki SHIRAI ,  Bahman SOLTANI ,  Shunsuke SOBAJIMA

IPC分类号： B23K26/53 ,  B23K26/082 ,  B23K26/70 ,  B23K101/40 ,  H01L21/67

CPC分类号： B23K26/53 ,  B23K26/082 ,  B23K26/707 ,  H01L21/67092 ,  B23K2101/40

摘要： A wafer manufacturing method for obtaining a wafer from an ingot includes the following procedure, steps or processes. A surface of one end side of the ingot in a height direction thereof is irradiated with a laser beam to which the ingot has transparency, thereby forming a peeling layer at a depth position corresponding to a thickness of the wafer from the surface. At this moment, the laser beam is irradiated such that a frequency of irradiation in a facet region is higher than that in a non-facet region. A wafer precursor as a portion between the surface of the ingot and the peeling layer is peeled from the ingot at the peeling layer. A major surface of a peeling body having a plate like shape, the peeling body being obtained by the wafer peeling step, is planarized electrically, chemically and mechanically, thereby obtaining a wafer.

公开(公告)号：US20190039178A1

公开(公告)日：2019-02-07

申请号：US16072970

申请日：2017-01-24

申请人： DENSO CORPORATION

发明人： Hideaki SHIRAI ,  Koichiro YASUDA

IPC分类号： B23K26/06 ,  B23K26/073 ,  B23K26/388

摘要： A method for manufacturing a member having a through hole includes a primary formation step, an intensity determination step, a laser modulation step, and a secondary formation step. The primary formation step includes radiating a laser beam to a workpiece member to form a pilot hole having a smaller inner diameter than the through hole while receiving light from the workpiece member at a light detection unit. The intensity determination step includes determining whether a light intensity is equal to or less than a predetermined threshold value. The laser modulation step includes modulating a spatial light phase of the laser beam the intensity of the light is equal to or less than the predetermined threshold value. The secondary formation step includes radiating the laser beam having the modulated spatial light phase to a peripheral part of the pilot hole to form the through hole.

公开(公告)号：US20230115673A1

公开(公告)日：2023-04-13

申请号：US17960847

申请日：2022-10-06

申请人： DENSO CORPORATION ,  National University Corporation Saitama University

发明人： Bahman SOLTANI ,  Koichiro YASUDA ,  Ryota TAKAGI ,  Tomoki KAWAZU ,  Shunsuke SOBAJIMA ,  Yutaro ISSHIKI ,  Sodai NOMURA ,  Hideaki SHIRAI ,  Yohei YAMADA ,  Junichi IKENO

IPC分类号： B23K26/38 ,  B23K26/402

摘要： A manufacturing method for wafers includes: radiating a laser beam to a planned cutoff surface where the ingot is to be cutoff; and forming, with the radiation of the laser beam, a plurality of reformed sections at the planned cutoff surface to extend a crack from the reformed section, thereby slicing wafers, wherein an energy density of the laser beam exceeds a reforming threshold. The energy density satisfies at least one of conditions of a peak value of the energy density is lower than or equal to 44 J/cm2, a rising rate of the energy density at a portion corresponding to the most shallow position where the energy density reaches the reforming threshold Eth is larger than or equal to 1000 J/cm3, and a range of depth where the energy density exceeds the reforming threshold is smaller than or equal to 30 μm.