公开(公告)号：US20240241078A1

公开(公告)日：2024-07-18

申请号：US18603999

申请日：2024-03-13

Applicant: DENSO CORPORATION

Inventor： Kazuhisa NAKAGAWA ,  Yuhei Shimizu ,  Daisuke Kobayashi ,  Masashi Suzuki ,  Akira Nukazuka ,  Teppei Sakai ,  Kei Hayakawa ,  Kazuhiko Kano ,  Mana Asano

IPC: G01N27/414 ,  G01N27/30

CPC classification number: G01N27/4141 ,  G01N27/301

Abstract: An ion sensor includes an ion detection element, a reference electrode that provides a reference point of a potential, and a solution in which an ion concentration can be changed in a sensing area of the ion detection element. The sensing area of the ion detection element is disposed in the solution. A method for detecting a target substance employs an ion sensor. The target substance bound to a label having a function of changing the amount of ions detectable by the ion sensor is introduced into the solution, and a change in the amount of ions is detected using the ion sensor.

公开(公告)号：US10479675B2

公开(公告)日：2019-11-19

申请号：US15757672

申请日：2016-09-09

Applicant: DENSO CORPORATION

Inventor： Akira Ogawa ,  Yoshitaka Noda ,  Tetsuo Yoshioka ,  Yuhei Shimizu

IPC: B81C1/00 ,  G01P15/08 ,  G01P15/125

Abstract: A semiconductor device production method includes performing trench etching to form a trench in a thickness direction of a semiconductor layer so that both of a first pattern portion and a second pattern portion whose side walls face each other across the trench are formed. In the trench etching, the semiconductor layer is etched and removed while a protective film is formed on a surface of the semiconductor layer, and the trench etching is performed so that the first pattern portion and the second pattern portion are configured to have a same potential or a same temperature during the trench etching.