公开(公告)号：US20190221549A1

公开(公告)日：2019-07-18

申请号：US16360341

申请日：2019-03-21

Applicant: DENSO CORPORATION

Inventor： Hiromasa HAYASHI ,  Shunsuke TOMOTO ,  Yusuke MORI

IPC: H01L25/07 ,  H01L23/00 ,  H01L23/495 ,  H01L23/31 ,  H01L23/40 ,  G01R19/00 ,  G01R15/14

CPC classification number: H01L25/072 ,  G01R15/146 ,  G01R19/0092 ,  H01L23/3121 ,  H01L23/4006 ,  H01L23/48 ,  H01L23/49541 ,  H01L23/49575 ,  H01L24/48 ,  H01L25/07 ,  H01L25/18 ,  H01L2023/4031 ,  H01L2023/4087 ,  H01L2224/40137 ,  H01L2224/45111 ,  H01L2224/45147 ,  H01L2224/45149 ,  H01L2224/45155 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2924/18301

Abstract: A semiconductor device includes: a first chip to restrict current flow in a first direction through a current path; a second chip to restrict the current flow in a second direction opposite to the first direction, through the current path; a wiring having one end connected to the first chip and the other end connected to the second chip, and provided as a part of the current path by relaying the first chip and the second chip; a lead frame having a first lead arranged and fixed with the first chip and a second lead is arranged and fixed with the second chip; and molding resin sealing the first chip, the second chip, the wiring and the lead frame. The wiring is a shunt resistor having a resistive body. The lead frame further has a sense terminal to detect a voltage drop across the resistive body.