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公开(公告)号：US20150284296A1
公开(公告)日：2015-10-08
申请号：US14443505
申请日：2012-11-20
发明人： Hideyo Osanai , Yukihiro Kitamura , Hiroto Aoki , Yukihiro Kanechika , Ken Sugawara , Yasuko Takeda
CPC分类号： C04B37/02 , B23K1/19 , B32B15/04 , B32B18/00 , C04B35/581 , C04B37/026 , C04B41/91 , C04B2235/96 , C04B2235/963 , C04B2237/125 , C04B2237/127 , C04B2237/366 , C04B2237/407 , C04B2237/52 , C04B2237/704 , C04B2237/706 , H01L23/3735 , H01L2924/0002 , H05K1/0306 , H05K3/022 , H05K3/38 , Y10T428/24355 , H01L2924/00
摘要： After a wet blasting treatment for jetting a slurry, which contains spherical alumina as abrasive grains in a liquid, to the surface of a ceramic substrate 10 of aluminum nitride sintered body so that the ceramic substrate 10 has a residual stress of not higher than −50 MPa and so that the surface of the ceramic substrate 10 to be bonded to the metal plate 14 has an arithmetic average roughness Ra of 0.15 to 0.30 μm, a ten-point average roughness Rz of 0.7 to 1.1 μm and a maximum height Ry of 0.9 to 1.7 μm while causing the ceramic substrate to have a flexural strength of not higher than 500 MPa and causing the thickness of a residual stress layer 10a formed along the surface of the ceramic substrate 10 to be 25 μm or less, the metal plate 14 of copper or a copper alloy is bonded to the ceramic substrate 10, which is obtained by the wet blasting treatment, via a brazing filler metal 12 to produce a metal/ceramic bonding substrate which has an excellent bonding strength of the ceramic substrate 10 to the metal plate 14 and which has an excellent heat cycle resistance.
摘要翻译： 在将含有液体中的作为磨粒的球状氧化铝的浆料喷射到氮化铝烧结体的陶瓷基板10的表面的湿式喷砂处理之后，陶瓷基板10具有不高于-50的残余应力 并且使得与金属板14接合的陶瓷基板10的表面的算术平均粗糙度Ra为0.15〜0.30μm，十点平均粗糙度Rz为0.7〜1.1μm，最大高度Ry为0.9 使陶瓷基板具有不高于500MPa的弯曲强度，并使沿陶瓷基板10的表面形成的残余应力层10a的厚度为25μm以下，金属板14为 通过钎焊金属12将铜或铜合金结合到通过湿式喷砂处理获得的陶瓷基板10上，以制造具有优异的陶瓷结合强度的金属/陶瓷接合基板 并且具有优异的耐热循环性。
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公开(公告)号：US09944565B2
公开(公告)日：2018-04-17
申请号：US14443505
申请日：2012-11-20
发明人： Hideyo Osanai , Yukihiro Kitamura , Hiroto Aoki , Yukihiro Kanechika , Ken Sugawara , Yasuko Takeda
IPC分类号： B21D39/00 , C04B37/02 , H05K1/03 , H05K3/02 , H01L23/373 , B23K1/19 , B32B15/04 , B32B18/00 , C04B35/581 , C04B41/91 , H05K3/38
CPC分类号： C04B37/02 , B23K1/19 , B32B15/04 , B32B18/00 , C04B35/581 , C04B37/026 , C04B41/91 , C04B2235/96 , C04B2235/963 , C04B2237/125 , C04B2237/127 , C04B2237/366 , C04B2237/407 , C04B2237/52 , C04B2237/704 , C04B2237/706 , H01L23/3735 , H01L2924/0002 , H05K1/0306 , H05K3/022 , H05K3/38 , Y10T428/24355 , H01L2924/00
摘要： After a wet blasting treatment for jetting a slurry, which contains spherical alumina as abrasive grains in a liquid, to the surface of a ceramic substrate 10 of aluminum nitride sintered body so that the ceramic substrate 10 has a residual stress of not higher than −50 MPa and so that the surface of the ceramic substrate 10 to be bonded to the metal plate 14 has an arithmetic average roughness Ra of 0.15 to 0.30 μm, a ten-point average roughness Rz of 0.7 to 1.1 μm and a maximum height Ry of 0.9 to 1.7 μm while causing the ceramic substrate to have a flexural strength of not higher than 500 MPa and causing the thickness of a residual stress layer 10a formed along the surface of the ceramic substrate 10 to be 25 μm or less, the metal plate 14 of copper or a copper alloy is bonded to the ceramic substrate 10, which is obtained by the wet blasting treatment, via a brazing filler metal 12 to produce a metal/ceramic bonding substrate which has an excellent bonding strength of the ceramic substrate 10 to the metal plate 14 and which has an excellent heat cycle resistance.
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公开(公告)号：US11749581B2
公开(公告)日：2023-09-05
申请号：US16955115
申请日：2019-02-06
IPC分类号： H01L23/373 , H01L21/48 , H01L23/053 , H01L23/31 , H01L23/00 , H01L25/07 , H01L23/495 , H01L25/16
CPC分类号： H01L23/3735 , H01L21/4882 , H01L23/053 , H01L23/3121 , H01L23/562 , H01L24/32 , H01L24/48 , H01L24/73 , H01L25/072 , H01L23/495 , H01L25/162 , H01L2224/32225 , H01L2224/48139 , H01L2224/48225 , H01L2224/73265 , H01L2924/05032 , H01L2924/13055 , H01L2924/13091 , H01L2924/15787 , H01L2924/35121
摘要： Provided are a semiconductor module in which bonding properties between an insulated substrate and a sealing resin is improved and a method for manufacturing the semiconductor module. A semiconductor module 50 is provided with: an insulated substrate 23; a circuit pattern 24 that is formed on the insulated substrate; semiconductor elements 25, 26 that are joined on the circuit pattern; and a sealing resin 28 for sealing the insulated substrate, the circuit pattern, and the semiconductor elements. The surface 23a of the insulated substrate in a part where the insulative substrate and the sealing resin are bonded to each other, is characterized in that, in a cross section of the insulated substrate, the average roughness derived in a 300-μm wide range is 0.15 μm or greater and the average roughness derived in a 3-μm-wide range is 0.02 μm or greater.
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