公开(公告)号：US20110117746A1

公开(公告)日：2011-05-19

申请号：US13054665

申请日：2009-07-23

申请人： Daisuke Maruyama ,  Yasushi Sakaida ,  BangChing Ho ,  Keisuke Hashimoto ,  Noriaki Fujitani

发明人： Daisuke Maruyama ,  Yasushi Sakaida ,  BangChing Ho ,  Keisuke Hashimoto ,  Noriaki Fujitani

IPC分类号： H01L21/31 ,  C09D183/04

CPC分类号： H01L21/02282 ,  C08G77/04 ,  C08G77/60 ,  C08L83/04 ,  G03F7/405 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/0337 ,  H01L21/3121 ,  H01L21/3122

摘要： It is an object to provide a coating composition applicable to “reversal patterning” and suitable for forming a film covering a resist pattern. The object is accomplished by a coating composition for lithography comprising an organopolysiloxane, a solvent containing the prescribed organic solvent as a main component, and a quaternary ammonium salt or a quaternary phosphonium salt; or a coating composition for lithography comprising a polysilane, a solvent containing the prescribed organic solvent as a main component, and at least one additive selected from a group consisting of a crosslinking agent, a quaternary ammonium salt, a quaternary phosphonium salt, and a sulfonic acid compound, wherein the polysilane has, at a terminal thereof, a silanol group or a silanol group together with a hydrogen atom.

摘要翻译： 本发明的目的是提供适用于“反转图案化”并适用于形成覆盖抗蚀剂图案的膜的涂料组合物。 该目的通过一种用于光刻的涂料组合物来实现，该涂料组合物包含有机聚硅氧烷，含有规定的有机溶剂作为主要成分的溶剂，以及季铵盐或季鏻盐; 或用于光刻的涂料组合物，其包含聚硅烷，含有规定的有机溶剂作为主要成分的溶剂和至少一种选自交联剂，季铵盐，季鏻盐和磺酸盐的添加剂 酸化合物，其中聚硅烷在其末端具有硅烷醇基或硅烷醇基以及氢原子。

公开(公告)号：US20130230809A1

公开(公告)日：2013-09-05

申请号：US13884132

申请日：2011-11-11

申请人： Rikimaru Sakamoto ,  Noriaki Fujitani ,  Takafumi Endo ,  Ryuji Ohnishi ,  BangChing Ho

发明人： Rikimaru Sakamoto ,  Noriaki Fujitani ,  Takafumi Endo ,  Ryuji Ohnishi ,  BangChing Ho

IPC分类号： G03F7/00 ,  C08L67/04

CPC分类号： G03F7/00 ,  C08L67/04 ,  G03F7/11

摘要： There is provided a composition for forming a resist underlayer film that has a high selectivity of dry etching rate even though the composition contains an aromatic ring such as a benzene ring, and that is useful in lowering LER that presents a large problem in EUV (wavelength 13.5 nm) lithography. Moreover, another object is to obtain a composition for forming a resist underlayer film that provides a resist pattern having a desired shape on the resist underlayer film. A resist underlayer film forming composition for lithography which includes a polymer and a solvent, wherein in the polymer, diphenyl sulfone or a derivative thereof is introduced in the main chain of the polymer through an ether bond.

摘要翻译： 提供了一种用于形成抗蚀剂下层膜的组合物，即使该组合物含有苯环等芳香环，也具有高的干蚀刻选择性，并且可用于降低在EUV（波长 13.5 nm）光刻。 此外，另一个目的是获得一种形成抗蚀剂下层膜的组合物，其在抗蚀剂下层膜上提供具有所需形状的抗蚀剂图案。 一种用于光刻的抗蚀剂下层膜成膜组合物，其包括聚合物和溶剂，其中在聚合物中，二苯基砜或其衍生物通过醚键引入聚合物的主链中。

公开(公告)号：US08722840B2

公开(公告)日：2014-05-13

申请号：US13884132

申请日：2011-11-11

申请人： Rikimaru Sakamoto ,  Noriaki Fujitani ,  Takafumi Endo ,  Ryuji Ohnishi ,  BangChing Ho

发明人： Rikimaru Sakamoto ,  Noriaki Fujitani ,  Takafumi Endo ,  Ryuji Ohnishi ,  BangChing Ho

IPC分类号： G03F7/11 ,  C08L67/04

CPC分类号： G03F7/00 ,  C08L67/04 ,  G03F7/11

摘要： There is provided a composition for forming a resist underlayer film that has a high selectivity of dry etching rate even though the composition contains an aromatic ring such as a benzene ring, and that is useful in lowering LER that presents a large problem in EUV (wavelength 13.5 nm) lithography. Moreover, another object is to obtain a composition for forming a resist underlayer film that provides a resist pattern having a desired shape on the resist underlayer film. A resist underlayer film forming composition for lithography which includes a polymer and a solvent, wherein in the polymer, diphenyl sulfone or a derivative thereof is introduced in the main chain of the polymer through an ether bond.

摘要翻译： 提供了一种用于形成抗蚀剂下层膜的组合物，即使该组合物含有苯环等芳香环，也具有高的干蚀刻选择性，并且可用于降低在EUV（波长 13.5 nm）光刻。 此外，另一个目的是获得一种形成抗蚀剂下层膜的组合物，其在抗蚀剂下层膜上提供具有所需形状的抗蚀剂图案。 一种用于光刻的抗蚀剂下层膜成膜组合物，其包括聚合物和溶剂，其中在聚合物中，二苯基砜或其衍生物通过醚键引入聚合物的主链中。

公开(公告)号：US20120251955A1

公开(公告)日：2012-10-04

申请号：US13515960

申请日：2010-12-10

申请人： Rikimaru Sakamoto ,  Takafumi Endo ,  BangChing Ho

发明人： Rikimaru Sakamoto ,  Takafumi Endo ,  BangChing Ho

IPC分类号： C09D163/00 ,  C08K5/07 ,  G03F7/20 ,  C08K5/06

CPC分类号： G03F7/091 ,  C08G59/12 ,  C08G59/4223 ,  C08L63/00

摘要： There is provided a composition for forming a resist underlayer film for electron beam or EUV lithography that is used in a device manufacture process using EUV lithography, reduces the adverse effects caused by an electron beam or EUV, and is effective for the formation of a good resist pattern and a resist pattern formation method using the composition for forming a resist underlayer film for lithography. A composition for forming a resist underlayer film for electron beam or EUV lithography, comprising: a polymer having a repeating unit structure of Formula (1): [where Q is a group of Formula (2) or Formula (3): {where Q1 is a C1-10 alkylene group, a phenylene group, a naphthylene group, or an anthrylene group, X1 is a group of Formula (4), Formula (5), or Formula (6): and a solvent.

摘要翻译： 提供了一种用于形成用于电子束或EUV光刻的抗蚀剂下层膜的组合物，其用于使用EUV光刻的器件制造工艺中，减少了由电子束或EUV引起的不利影响，并且有效地形成良好的 抗蚀剂图案和使用用于形成用于光刻的抗蚀剂下层膜的组合物的抗蚀剂图案形成方法。 一种用于形成用于电子束或EUV光刻的抗蚀剂下层膜的组合物，包括：具有式（1）的重复单元结构的聚合物：[其中Q是式（2）或式（3）的基团：{其中Q1 是碳数1〜10的亚烷基，亚苯基，亚萘基或亚蒽基，X 1为式（4），式（5）或式（6）的基团和溶剂。