公开(公告)号：US20110117746A1

公开(公告)日：2011-05-19

申请号：US13054665

申请日：2009-07-23

申请人： Daisuke Maruyama ,  Yasushi Sakaida ,  BangChing Ho ,  Keisuke Hashimoto ,  Noriaki Fujitani

发明人： Daisuke Maruyama ,  Yasushi Sakaida ,  BangChing Ho ,  Keisuke Hashimoto ,  Noriaki Fujitani

IPC分类号： H01L21/31 ,  C09D183/04

CPC分类号： H01L21/02282 ,  C08G77/04 ,  C08G77/60 ,  C08L83/04 ,  G03F7/405 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/0337 ,  H01L21/3121 ,  H01L21/3122

摘要： It is an object to provide a coating composition applicable to “reversal patterning” and suitable for forming a film covering a resist pattern. The object is accomplished by a coating composition for lithography comprising an organopolysiloxane, a solvent containing the prescribed organic solvent as a main component, and a quaternary ammonium salt or a quaternary phosphonium salt; or a coating composition for lithography comprising a polysilane, a solvent containing the prescribed organic solvent as a main component, and at least one additive selected from a group consisting of a crosslinking agent, a quaternary ammonium salt, a quaternary phosphonium salt, and a sulfonic acid compound, wherein the polysilane has, at a terminal thereof, a silanol group or a silanol group together with a hydrogen atom.

摘要翻译： 本发明的目的是提供适用于“反转图案化”并适用于形成覆盖抗蚀剂图案的膜的涂料组合物。 该目的通过一种用于光刻的涂料组合物来实现，该涂料组合物包含有机聚硅氧烷，含有规定的有机溶剂作为主要成分的溶剂，以及季铵盐或季鏻盐; 或用于光刻的涂料组合物，其包含聚硅烷，含有规定的有机溶剂作为主要成分的溶剂和至少一种选自交联剂，季铵盐，季鏻盐和磺酸盐的添加剂 酸化合物，其中聚硅烷在其末端具有硅烷醇基或硅烷醇基以及氢原子。

公开(公告)号：US09753369B2

公开(公告)日：2017-09-05

申请号：US14007096

申请日：2012-03-19

申请人： Rikimaru Sakamoto ,  Yasushi Sakaida ,  Bangching Ho

发明人： Rikimaru Sakamoto ,  Yasushi Sakaida ,  Bangching Ho

IPC分类号： G03C5/29 ,  G03F7/32 ,  H01L21/027 ,  H01L21/306 ,  H01L21/033 ,  G03F7/09 ,  G03F7/11 ,  G03F7/26

CPC分类号： G03F7/325 ,  G03F7/094 ,  G03F7/11 ,  G03F7/26 ,  H01L21/027 ,  H01L21/0275 ,  H01L21/0337 ,  H01L21/306

摘要： Disclosed is a developer, one that does not cause pattern collapse during the formation process, for the formation of a fine pattern and a method for pattern formation using the developer. A developer used in a lithography process includes a polymer for forming a dry-etching mask and an organic solvent. The polymer is preferably a curable resin different from a curable resin forming a resist film. The developer is preferably used after exposure of the resist film. The organic solvent in the developer is preferably butyl acetate or a mixed solvent of butyl acetate and an alcohol, or 2-pentanone or a mixed solvent of 2-pentanone and an alcohol. Also disclosed is a method for producing a semiconductor device.

公开(公告)号：US20140038415A1

公开(公告)日：2014-02-06

申请号：US14007096

申请日：2012-03-19

申请人： Rikimaru Sakamoto ,  Yasushi Sakaida ,  Bangching Ho

发明人： Rikimaru Sakamoto ,  Yasushi Sakaida ,  Bangching Ho

IPC分类号： G03F7/32 ,  H01L21/306

CPC分类号： G03F7/325 ,  G03F7/094 ,  G03F7/11 ,  G03F7/26 ,  H01L21/027 ,  H01L21/0275 ,  H01L21/0337 ,  H01L21/306

摘要： Disclosed is a developer, one that does not cause pattern collapse during the formation process, for the formation of a fine pattern and a method for pattern formation using the developer. A developer used in a lithography process includes a polymer for forming a dry-etching mask and an organic solvent. The polymer is preferably a curable resin different from a curable resin forming a resist film. The developer is preferably used after exposure of the resist film. The organic solvent in the developer is preferably butyl acetate or a mixed solvent of butyl acetate and an alcohol, or 2-pentanone or a mixed solvent of 2-pentanone and an alcohol. Also disclosed is a method for producing a semiconductor device.

摘要翻译： 公开了一种显影剂，其不会在形成过程中引起图案塌陷，从而形成精细图案以及使用显影剂形成图案的方法。 在光刻工艺中使用的显影剂包括用于形成干蚀刻掩模和有机溶剂的聚合物。 聚合物优选为与形成抗蚀剂膜的可固化树脂不同的可固化树脂。 显影剂优选在抗蚀剂膜曝光之后使用。 显影剂中的有机溶剂优选为乙酸丁酯或乙酸丁酯与醇或2-戊酮或2-戊酮与醇的混合溶剂的混合溶剂。 还公开了一种半导体器件的制造方法。

公开(公告)号：US08658341B2

公开(公告)日：2014-02-25

申请号：US13266034

申请日：2010-04-21

申请人： Daisuke Maruyama ,  Hiroaki Yaguchi ,  Yasushi Sakaida

发明人： Daisuke Maruyama ,  Hiroaki Yaguchi ,  Yasushi Sakaida

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/028 ,  G03F7/075 ,  G03F7/11

CPC分类号： G03F7/40

摘要： There is provided to a pattern reversal film forming composition that is capable of forming a pattern reversal film which is not mixed with a resist pattern formed on a substrate, and that is only capable of forming a pattern reversal film advantageously covering the pattern, but also irrespective of whether the resist pattern is coarse or fine, capable of forming a planar film excellent in temporal stability on the pattern. A pattern reversal film forming composition including a polysiloxane, an additive and an organic solvent, characterized in that the polysiloxane is a product of a hydrolysis and/or condensation reaction of a silane compound containing a tetraalkoxysilane of Si(OR1)4 and an alkoxysilane of XnSi(OR2)4-n, and the tetraalkoxysilane is used in a ratio of 1 to 50% by mole based on the number of moles of the whole silane compound; and a pattern reversal film and a method of forming a reversed pattern in which the composition is used.

摘要翻译： 提供了能够形成图案反转膜的图案反转膜形成组合物，其不与形成在基底上的抗蚀剂图案混合，并且仅能够形成有利地覆盖图案的图案反转膜，而且 无论抗蚀剂图案是粗糙还是微细，都能够形成在图案上的时间稳定性优异的平面膜。 一种包含聚硅氧烷，添加剂和有机溶剂的图案反转膜形成组合物，其特征在于所述聚硅氧烷是含有Si（OR 1）4的四烷氧基硅烷和含有Si（OR 1）4）的烷氧基​​硅烷的硅烷化合物的水解和/或缩合反应的产物， XnSi（OR2）4-n，四烷氧基硅烷的用量相对于全部硅烷化合物的摩尔数为1〜50摩尔％ 和图案反转膜以及形成其中使用组合物的反转图案的方法。

公开(公告)号：US20120045899A1

公开(公告)日：2012-02-23

申请号：US13266034

申请日：2010-04-21

申请人： Daisuke Maruyama ,  Hiroaki Yaguchi ,  Yasushi Sakaida

发明人： Daisuke Maruyama ,  Hiroaki Yaguchi ,  Yasushi Sakaida

IPC分类号： H01L21/311 ,  B05D5/00 ,  B05D3/02 ,  C09D183/04

CPC分类号： G03F7/40

摘要： There is provided to a pattern reversal film forming composition that is capable of forming a pattern reversal film which is not mixed with a resist pattern formed on a substrate, and that is only capable of forming a pattern reversal film advantageously covering the pattern, but also irrespective of whether the resist pattern is coarse or fine, capable of forming a planar film excellent in temporal stability on the pattern. A pattern reversal film forming composition including a polysiloxane, an additive and an organic solvent, characterized in that the polysiloxane is a product of a hydrolysis and/or condensation reaction of a silane compound containing a tetraalkoxysilane of Si(OR1)4 and an alkoxysilane of XnSi(OR2)4-n, and the tetraalkoxysilane is used in a ratio of 1 to 50% by mole based on the number of moles of the whole silane compound; and a pattern reversal film and a method of forming a reversed pattern in which the composition is used.

摘要翻译： 提供了能够形成图案反转膜的图案反转膜形成组合物，其不与形成在基底上的抗蚀剂图案混合，并且仅能够形成有利地覆盖图案的图案反转膜，而且 无论抗蚀剂图案是粗糙还是微细，都能够形成在图案上的时间稳定性优异的平面膜。 一种包含聚硅氧烷，添加剂和有机溶剂的图案反转膜形成组合物，其特征在于所述聚硅氧烷是含有Si（OR 1）4的四烷氧基硅烷和含有Si（OR 1）4）的烷氧基​​硅烷的硅烷化合物的水解和/或缩合反应的产物， XnSi（OR2）4-n，四烷氧基硅烷的用量相对于全部硅烷化合物的摩尔数为1〜50摩尔％ 和图案反转膜以及形成其中使用组合物的反转图案的方法。

公开(公告)号：US07842620B2

公开(公告)日：2010-11-30

申请号：US12311742

申请日：2007-10-12

申请人： Satoshi Takei ,  Makoto Nakajima ,  Yasushi Sakaida ,  Hikaru Imamura ,  Keisuke Hashimoto ,  Takahiro Kishioka

发明人： Satoshi Takei ,  Makoto Nakajima ,  Yasushi Sakaida ,  Hikaru Imamura ,  Keisuke Hashimoto ,  Takahiro Kishioka

IPC分类号： H01L21/31

CPC分类号： H01L21/0332 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/11 ,  H01L21/0274 ,  H01L21/31138 ,  H01L21/31144

摘要： There is provided a laminate used as an underlayer layer for a photoresist in a lithography process of a semiconductor device and a method for manufacturing a semiconductor device by using the laminate. The method comprising: laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate. The method also comprises: forming a resist pattern in the photoresist film (layer D); etching the organic antireflective film (layer C) with the resist pattern; etching the silicon-containing hard mask (layer B) with the patterned organic antireflective film (layer C); etching the organic underlayer film (layer A) with the patterned silicon-containing hard mask (layer B); and processing the semiconductor substrate with the patterned organic underlayer film (layer A).

摘要翻译： 在半导体器件的光刻工艺中提供了用作光致抗蚀剂的下层的层压体，以及通过使用层压体制造半导体器件的方法。 该方法包括：在半导体上依次层叠有机下层膜（A层），含硅硬掩模（B层），有机抗反射膜（C层）和光致抗蚀剂膜（D层）的各层 基质。 该方法还包括：在光致抗蚀剂膜（层D）中形成抗蚀剂图案; 用抗蚀剂图案蚀刻有机抗反射膜（层C）; 用图案化的有机抗反射膜（C层）蚀刻含硅硬掩模（B层）; 用图案化的含硅硬掩模（B层）蚀刻有机下层膜（层A）; 并用图案化的有机下层膜（层A）处理半导体衬底。

公开(公告)号：US20100022089A1

公开(公告)日：2010-01-28

申请号：US12311742

申请日：2007-10-12

申请人： Satoshi Takei ,  Makoto Nakajima ,  Yasushi Sakaida ,  Hikaru Imamura ,  Keisuke Hashimoto ,  Takahiro Kishioka

发明人： Satoshi Takei ,  Makoto Nakajima ,  Yasushi Sakaida ,  Hikaru Imamura ,  Keisuke Hashimoto ,  Takahiro Kishioka

IPC分类号： H01L21/311 ,  G03F7/075

CPC分类号： H01L21/0332 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/11 ,  H01L21/0274 ,  H01L21/31138 ,  H01L21/31144

摘要： There is provided a laminate used as an underlayer layer for a photoresist in a lithography process of a semiconductor device and a method for manufacturing a semiconductor device by using the laminate. The method comprising: laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate. The method also comprises: forming a resist pattern in the photoresist film (layer D); etching the organic antireflective film (layer C) with the resist pattern; etching the silicon-containing hard mask (layer B) with the patterned organic antireflective film (layer C); etching the organic underlayer film (layer A) with the patterned silicon-containing hard mask (layer B); and processing the semiconductor substrate with the patterned organic underlayer film (layer A).

公开(公告)号：US20120142195A1

公开(公告)日：2012-06-07

申请号：US13389682

申请日：2010-08-11

申请人： Tetsuya Shinjo ,  Hirokazu Nishimaki ,  Yasushi Sakaida ,  Keisuke Hashimoto

发明人： Tetsuya Shinjo ,  Hirokazu Nishimaki ,  Yasushi Sakaida ,  Keisuke Hashimoto

IPC分类号： H01L21/311 ,  H01L21/312 ,  C08G65/332

CPC分类号： G03F7/091 ,  G03F7/0752 ,  G03F7/094

摘要： There is provided a resist underlayer film having both heat resistance and etching selectivity. A composition for forming a resist underlayer film for lithography, comprising a reaction product (C) of an alicyclic epoxy polymer (A) with a condensed-ring aromatic carboxylic acid and monocyclic aromatic carboxylic acid (B). The alicyclic epoxy polymer (A) may include a repeating structural unit of Formula (1): (T is a repeating unit structure containing an alicyclic ring in the polymer main chain; and E is an epoxy group or an organic group containing an epoxy group). The condensed-ring aromatic carboxylic acid and monocyclic aromatic carboxylic acid (B) may include a condensed-ring aromatic carboxylic acid (B1) and a monocyclic aromatic carboxylic acid (B2) in a molar ratio of B1:B2=3:7 to 7:3. The condensed-ring aromatic carboxylic acid (B1) may be 9-anthracenecarboxylic acid and the monocyclic aromatic carboxylic acid (B2) may be benzoic acid.

摘要翻译： 提供了具有耐热性和蚀刻选择性的抗蚀剂下层膜。 一种用于形成用于光刻的抗蚀剂下层膜的组合物，其包含脂环式环氧聚合物（A）与稠环芳族羧酸和单环芳族羧酸（B）的反应产物（C）。 脂环族环氧聚合物（A）可以包括式（1）的重复结构单元：（T是在聚合物主链中含有脂环族的重复单元结构，E是环氧基或含有环氧基的有机基 ）。 缩环芳族羧酸和单环芳香族羧酸（B）可以包括B1:B2 = 3:7〜7的摩尔比的缩环芳族羧酸（B1）和单环芳​​香族羧酸（B2） ：3。 缩环芳族羧酸（B1）可以是9-蒽代羧酸，单环芳香羧酸（B2）可以是苯甲酸。

公开(公告)号：US10509320B2

公开(公告)日：2019-12-17

申请号：US11795520

申请日：2006-01-06

申请人： Satoshi Takei ,  Tetsuya Shinjo ,  Keisuke Hashimoto ,  Yasushi Sakaida

发明人： Satoshi Takei ,  Tetsuya Shinjo ,  Keisuke Hashimoto ,  Yasushi Sakaida

IPC分类号： G03F7/09 ,  G03F7/26 ,  G03F7/30

摘要： There is provided an underlayer coating forming composition for lithography that is used in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to photoresists, does not intermix with photoresists, and is capable of flattening the surface of a semi conductor substrate having holes of a high aspect ratio.The underlayer coating forming composition for lithography comprises, a compound having two or more protected carboxylic groups, a compound having two or more epoxy groups, and a solvent.

公开(公告)号：US08822138B2

公开(公告)日：2014-09-02

申请号：US13389682

申请日：2010-08-11

申请人： Tetsuya Shinjo ,  Hirokazu Nishimaki ,  Yasushi Sakaida ,  Keisuke Hashimoto

发明人： Tetsuya Shinjo ,  Hirokazu Nishimaki ,  Yasushi Sakaida ,  Keisuke Hashimoto

IPC分类号： G03F7/11 ,  H01L21/027 ,  C08G65/332 ,  G03F7/09 ,  G03F7/075

CPC分类号： G03F7/091 ,  G03F7/0752 ,  G03F7/094

摘要： There is provided a resist underlayer film having both heat resistance and etching selectivity. A composition for forming a resist underlayer film for lithography, comprising a reaction product (C) of an alicyclic epoxy polymer (A) with a condensed-ring aromatic carboxylic acid and monocyclic aromatic carboxylic acid (B). The alicyclic epoxy polymer (A) may include a repeating structural unit of Formula (1): (T is a repeating unit structure containing an alicyclic ring in the polymer main chain; and E is an epoxy group or an organic group containing an epoxy group). The condensed-ring aromatic carboxylic acid and monocyclic aromatic carboxylic acid (B) may include a condensed-ring aromatic carboxylic acid (B1) and a monocyclic aromatic carboxylic acid (B2) in a molar ratio of B1:B2=3:7 to 7:3. The condensed-ring aromatic carboxylic acid (B1) may be 9-anthracenecarboxylic acid and the monocyclic aromatic carboxylic acid (B2) may be benzoic acid.

摘要翻译： 提供了具有耐热性和蚀刻选择性的抗蚀剂下层膜。 一种用于形成用于光刻的抗蚀剂下层膜的组合物，其包含脂环式环氧聚合物（A）与稠环芳族羧酸和单环芳族羧酸（B）的反应产物（C）。 脂环族环氧聚合物（A）可以包括式（1）的重复结构单元：（T是在聚合物主链中含有脂环族的重复单元结构，E是环氧基或含有环氧基的有机基 ）。 缩环芳族羧酸和单环芳香族羧酸（B）可以包括B1:B2 = 3:7〜7的摩尔比的缩环芳族羧酸（B1）和单环芳​​香族羧酸（B2） ：3。 缩环芳族羧酸（B1）可以是9-蒽代羧酸，单环芳香羧酸（B2）可以是苯甲酸。