-
1.发明申请Field effect transistor, method of producing the same, and method of producing laminated member 失效场效应晶体管，其制造方法以及层叠体的制造方法公开(公告)号：US20070012914A1
公开(公告)日：2007-01-18
申请号：US10555614
申请日：2005-03-09
申请人： Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Hidetoshi Tsuzuki , Makiko Miyachi
发明人： Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Hidetoshi Tsuzuki , Makiko Miyachi
IPC分类号： H01L29/08
CPC分类号： H01L51/0512 , H01L51/0012 , H01L51/0077 , H01L51/0078 , H01L51/0533 , H01L51/0545
摘要： There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.
摘要翻译： 提供了具有有机半导体层的场效应晶体管，包括：至少含有卟啉的有机半导体层; 以及由至少聚硅氧烷化合物构成的层，该层层叠在有机半导体层上以与有机半导体层紧密接触。 结果，可以提供能够形成具有高结晶度和高取向性的有机半导体层并具有高迁移率的场效应晶体管。
-
2.发明申请FIELD EFFECT TRANSISTOR, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING LAMINATED MEMBER 失效场效应晶体管及其制造方法，以及生产层叠构件的方法公开(公告)号：US20090124040A1
公开(公告)日：2009-05-14
申请号：US12354745
申请日：2009-01-15
申请人： Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Hidetoshi Tsuzuki , Makiko Miyachi
发明人： Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Hidetoshi Tsuzuki , Makiko Miyachi
IPC分类号： H01L51/40
CPC分类号： H01L51/0512 , H01L51/0012 , H01L51/0077 , H01L51/0078 , H01L51/0533 , H01L51/0545
摘要： There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.
摘要翻译： 提供了具有有机半导体层的场效应晶体管，包括：至少含有卟啉的有机半导体层; 以及由至少聚硅氧烷化合物构成的层，该层层叠在有机半导体层上以与有机半导体层紧密接触。 结果，可以提供能够形成具有高结晶度和高取向性的有机半导体层并具有高迁移率的场效应晶体管。
-
3.发明授权Field effect transistor, method of producing the same, and method of producing laminated member 失效场效应晶体管，其制造方法以及层叠体的制造方法公开(公告)号：US07491967B2
公开(公告)日：2009-02-17
申请号：US10555614
申请日：2005-03-09
申请人： Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Hidetoshi Tsuzuki , Makiko Miyachi
发明人： Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Hidetoshi Tsuzuki , Makiko Miyachi
CPC分类号： H01L51/0512 , H01L51/0012 , H01L51/0077 , H01L51/0078 , H01L51/0533 , H01L51/0545
摘要： There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.
摘要翻译： 提供了具有有机半导体层的场效应晶体管，包括：至少含有卟啉的有机半导体层; 以及由至少聚硅氧烷化合物构成的层，该层层叠在有机半导体层上以与有机半导体层紧密接触。 结果，可以提供能够形成具有高结晶度和高取向性的有机半导体层并具有高迁移率的场效应晶体管。
-
4.发明授权Field effect transistor, method of producing the same, and method of producing laminated member 失效场效应晶体管，其制造方法以及层叠体的制造方法公开(公告)号：US08021915B2
公开(公告)日：2011-09-20
申请号：US12354745
申请日：2009-01-15
申请人： Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Hidetoshi Tsuzuki , Makiko Miyachi
发明人： Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Hidetoshi Tsuzuki , Makiko Miyachi
IPC分类号： H01L51/00
CPC分类号： H01L51/0512 , H01L51/0012 , H01L51/0077 , H01L51/0078 , H01L51/0533 , H01L51/0545
摘要： There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.
摘要翻译： 提供了具有有机半导体层的场效应晶体管，包括：至少含有卟啉的有机半导体层; 以及由至少聚硅氧烷化合物构成的层，该层层叠在有机半导体层上以与有机半导体层紧密接触。 结果，可以提供能够形成具有高结晶度和高取向性的有机半导体层并具有高迁移率的场效应晶体管。
-
公开(公告)号：US20080308789A1
公开(公告)日：2008-12-18
申请号：US10571688
申请日：2005-03-08
申请人： Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Satomi Sugiyama
发明人： Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Satomi Sugiyama
CPC分类号： H01L51/0077 , C07D487/22 , H01L51/0003 , H01L51/0525 , H01L51/0545
摘要： An object of the present invention is to provide a field effect transistor showing high field-effect mobility and a high ON/OFF ratio, which can be produced simply by using a porphyrin compound with excellent crystallinity and orientation. The field effect transistor according to the present invention transistor contains at least an organic semiconductor layer, wherein the organic semiconductor layer contains at least a porphyrin compound and has a maximum diffraction intensity I1 in a Bragg angle (2θ) range of 9.9° to 10.4° stronger than a maximum diffraction intensity I2 in a Bragg angle (2θ) range of 23.0° to 26.0° in X-ray diffraction using CuKα radiation.
摘要翻译： 本发明的目的是提供一种场效应晶体管，其表现出高场效应迁移率和高ON / OFF比，其可以简单地通过使用具有优异结晶性和取向性的卟啉化合物来制备。 根据本发明晶体管的场效应晶体管至少含有有机半导体层，其中有机半导体层至少含有卟啉化合物，并且在9.9°至10.4°的布拉格角（2θ）范围内具有最大衍射强度I1 在使用CuKalpha辐射的X射线衍射中，在23.0°至26.0°的布拉格角（2θ）范围内的最大衍射强度I2强。
-
公开(公告)号：US07960716B2
公开(公告)日：2011-06-14
申请号：US10571688
申请日：2005-03-08
申请人： Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Satomi Sugiyama
发明人： Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Satomi Sugiyama
CPC分类号： H01L51/0077 , C07D487/22 , H01L51/0003 , H01L51/0525 , H01L51/0545
摘要： An object of the present invention is to provide a field effect transistor showing high field-effect mobility and a high ON/OFF ratio, which can be produced simply by using a porphyrin compound with excellent crystallinity and orientation. The field effect transistor according to the present invention transistor contains at least an organic semiconductor layer, wherein the organic semiconductor layer contains at least a porphyrin compound and has a maximum diffraction intensity I1 in a Bragg angle (2θ) range of 9.9° to 10.4° stronger than a maximum diffraction intensity I2 in a Bragg angle (2θ) range of 23.0° to 26.0° in X-ray diffraction using CuKα radiation.
摘要翻译： 本发明的目的是提供一种场效应晶体管，其表现出高场效应迁移率和高ON / OFF比，其可以简单地通过使用具有优异结晶性和取向性的卟啉化合物来制备。 根据本发明晶体管的场效应晶体管至少含有有机半导体层，其中有机半导体层至少含有卟啉化合物，并且在9.9°至10.4的布拉格角（2θ）范围内具有最大衍射强度I1 °，在使用CuKα辐射的X射线衍射中的布拉格角（2θ）范围内的最大衍射强度I2强于23.0°至26.0°。
-
公开(公告)号：US20080048185A1
公开(公告)日：2008-02-28
申请号：US11892326
申请日：2007-08-22
IPC分类号： H01L51/30
CPC分类号： C07D487/22 , H01L51/0078 , H01L51/0545
摘要： Provided is a field effect transistor having an organic semiconductor layer, in which the organic semiconductor layer contains at least a tetrabenzo copper porphyrin crystal and has peaks at two or more of Bragg angles (2θ) in CuKα X-ray diffraction of 8.4°±0.2°, 10.2°±0.2°, 11.8°±0.2°, and 16.9°±0.2°, and the tetrabenzo copper porphyrin crystal comprises a compound represented by the following general formula (1). General Formula (1): (Wherein R2's each represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, oxyalkyl group, thioalkyl group, or alkylester group having 1 to 12 carbon atoms, and R3's each represent a hydrogen atom or an aryl group.)
摘要翻译： 提供了具有有机半导体层的场效应晶体管，其中有机半导体层至少包含四苯并卟啉晶体，并且在CuKαX射线衍射中的两个或更多个布拉格角（2θ）处具有8.4°±0.2的峰 °，10.2°±0.2°，11.8°±0.2°和16.9°±0.2°，四苯并卟啉晶体包含由以下通式（1）表示的化合物。 通式（1）表示：（其中R 2各自表示氢原子，卤原子，羟基或烷基，烷氧基，硫代烷基或烷基酯基， 12个碳原子和R 3各自表示氢原子或芳基。）
-
公开(公告)号：US07285441B2
公开(公告)日：2007-10-23
申请号：US10545398
申请日：2004-08-17
IPC分类号： H01L51/40
CPC分类号： C07D487/22 , H01L51/0078 , H01L51/0545
摘要： Provided is a field effect transistor having an organic semiconductor layer, in which the organic semiconductor layer contains at least a tetrabenzo copper porphyrin crystal and has peaks at two or more of Bragg angles (2θ) in CuKα X-ray diffraction of 8.4°±0.2°, 10.2°±0.2°, 11.8°±0.2°, and 16.9°±0.2°, and the tetrabenzo copper porphyrin crystal comprises a compound represented by the following general formula (1): (Wherein R2's each represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, oxyalkyl group, thioalkyl group, or alkylester group having 1 to 12 carbon atoms, and R3's each represent a hydrogen atom or an aryl group.)
摘要翻译： 提供了具有有机半导体层的场效应晶体管，其中有机半导体层至少包含四苯并卟啉晶体，并且在CuKαX射线衍射中的两个或更多个布拉格角（2θ）处具有8.4°±0.2的峰 °，10.2°±0.2°，11.8°±0.2°和16.9°±0.2°，四苯并卟啉晶体包含由以下通式（1）表示的化合物：（其中R 2 2 / 各自表示氢原子，卤素原子，羟基或烷基，烷氧基，硫代烷基或碳原子数1〜12的烷基酯基，R 3为 各自表示氢原子或芳基。）
-
公开(公告)号：US20060145141A1
公开(公告)日：2006-07-06
申请号：US10545398
申请日：2004-08-17
CPC分类号： C07D487/22 , H01L51/0078 , H01L51/0545
摘要： Provided is a field effect transistor having an organic semiconductor layer, in which the organic semiconductor layer contains at least a tetrabenzo copper porphyrin crystal and has peaks at two or more of Bragg angles (2θ) in CuKα X-ray diffraction of 8.4°±0.2°, 10.2°±0.2°, 11.80°±0.20°, and 16.90°±0.20°, and the tetrabenzo copper porphyrin crystal comprises a compound represented by the following general formula (1): (Wherein R2's each represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, oxyalkyl group, thioalkyl group, or alkylester group having 1 to 12 carbon atoms, and R3's each represent a hydrogen atom or an aryl group.)
摘要翻译： 提供了具有有机半导体层的场效应晶体管，其中有机半导体层至少包含四苯并卟啉晶体，并且在CuKαX射线衍射中的两个或更多个布拉格角（2θ）处具有8.4°±0.2的峰 °，10.2°±0.2°，11.80°±0.20°和16.90°±0.20°，四苯并卟啉晶体包含由以下通式（1）表示的化合物：其中R 2 各自表示氢原子，卤素原子，羟基或烷基，烷氧基，硫代烷基或碳原子数1〜12的烷基酯基，R 3为 各自表示氢原子或芳基。）
-
10.发明授权Substrate, conductive substrate, fine structure substrate, organic field effect transistor and manufacturing method thereof 失效基板，导电基板，精细结构基板，有机场效应晶体管及其制造方法公开(公告)号：US07459338B2
公开(公告)日：2008-12-02
申请号：US11077931
申请日：2005-03-11
IPC分类号： H01L51/40
CPC分类号： H01L51/0096 , H01L51/0022 , H01L51/0036 , H01L51/052 , H01L51/0545 , Y02E10/549 , Y02P70/521
摘要： A substrate is provided which comprises an organic resin layer on a base material, wherein the base material has an average surface roughness of not less than 1.2 nm but no more than 5 nm and a maximum height of a surface unevenness of not less than 0.1 μm but no more than 1.0 μm; the organic resin layer has an average surface roughness of not more than 1 nm and a maximum peak height of a surface unevenness of not more than 30 nm; and at least a part of a surface of the organic resin layer comprises a hydrophilic region.
摘要翻译： 提供一种基材，其在基材上包含有机树脂层，其中基材的平均表面粗糙度不小于1.2nm但不大于5nm，表面凹凸的最大高度不小于0.1μm 但不超过1.0个妈妈; 有机树脂层的平均表面粗糙度不大于1nm，表面凹凸的最大峰高不大于30nm; 并且有机树脂层的表面的至少一部分包含亲水区域。
-
-
-
-
-
-
-
-
-
搜索结果
63 条记录 (耗时 0.035 秒)