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公开(公告)号：US20110089030A1
公开(公告)日：2011-04-21
申请号：US12588578
申请日：2009-10-20
申请人： Daniel R. Juliano , Bao Nguyen , A. Piers Newbery , Asit Rairkar , Johannes Vlcek , Abdelouahab Ziani
发明人： Daniel R. Juliano , Bao Nguyen , A. Piers Newbery , Asit Rairkar , Johannes Vlcek , Abdelouahab Ziani
CPC分类号： C23C14/3414 , B22D11/0614 , B22D17/007 , B22D18/06 , B22F3/22 , C22C1/04 , C22C28/00
摘要： A sputtering target includes a copper indium gallium sputtering target material on a backing structure. The sputtering target material has a density of at least 100% or more as defined by the rule of mixtures applied to densities of component elements of the sputtering target material. The sputtering target material has an overall uniform composition.
摘要翻译： 溅射靶包括背衬结构上的铜铟镓溅射靶材料。 溅射靶材料具有至少100％以上的密度，其由施加到溅射靶材料的组分元素的密度的混合物的规则所定义。 溅射靶材料具有总体均匀的组成。
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公开(公告)号：US08709335B1
公开(公告)日：2014-04-29
申请号：US12907169
申请日：2010-10-19
申请人： Johannes Vlcek , Daniel R. Juliano
发明人： Johannes Vlcek , Daniel R. Juliano
IPC分类号： B22F3/02
CPC分类号： B05B7/1626 , C22C1/0425 , C23C14/3414 , C23C24/04
摘要： A method of making a sputtering target includes providing a backing structure, and forming a copper indium gallium sputtering target material on the backing structure by cold spraying. The step of cold spraying includes spraying a powder comprising copper, indium and gallium in a process gas stream, and at least one of an average particle size of the powder is at least 35 μm, a velocity of the process gas stream is at least 150 m/s, or a process gas pressure is 20 bar or less.
摘要翻译： 制造溅射靶的方法包括提供背衬结构，并通过冷喷涂在衬底结构上形成铜铟镓溅射靶材。 冷喷涂步骤包括在工艺气流中喷涂包含铜，铟和镓的粉末，并且粉末的平均粒径中的至少一个至少为35μm，工艺气体流的速度为至少150 m / s，或者处理气体压力为20巴或更小。
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3.发明申请Photovoltaic materials with controllable zinc and sodium content and method of making thereof 审中-公开具有可控锌和钠含量的光伏材料及其制备方法公开(公告)号：US20110162696A1
公开(公告)日：2011-07-07
申请号：US12654808
申请日：2010-01-05
申请人： Johannes Vlcek , Daniel R. Juliano
发明人： Johannes Vlcek , Daniel R. Juliano
CPC分类号： H01L31/072 , H01L31/022425 , H01L31/0322 , H01L31/206 , Y02E10/541 , Y02P70/521
摘要： A solar cell includes a substrate, a first electrode located over the substrate, a sodium doped p-type copper indium selenide (CIS) based alloy semiconductor absorber layer located over the first electrode, a zinc and sodium doped n-type copper indium selenide (CIS) based alloy semiconductor layer located on the p-type semiconductor absorber layer, and a second electrode located over the n-type semiconductor layer.
摘要翻译： 太阳能电池包括衬底，位于衬底上的第一电极，位于第一电极上方的钠掺杂p型铜铟硒（CIS）基合金半导体吸收体层，锌和钠掺杂的n型铜铟硒化物 CIS）基合金半导体层，以及位于n型半导体层上方的第二电极。
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4.发明授权Sputtering target including a feature to reduce chalcogen build up and arcing on a backing tube 有权溅射目标包括减少硫属元素在背衬管上积聚和起弧的特征公开(公告)号：US09255323B2
公开(公告)日：2016-02-09
申请号：US13525593
申请日：2012-06-18
申请人： Robert Martinson , Heinrich Von Bunau , Mark Campello , Ron Rulkens , Tom Heckel , Johannes Vlcek
发明人： Robert Martinson , Heinrich Von Bunau , Mark Campello , Ron Rulkens , Tom Heckel , Johannes Vlcek
IPC分类号： C23C14/34 , H01J37/34 , H01L31/18 , H01L31/032 , C23C14/06
CPC分类号： C23C14/3407 , C23C14/0623 , H01J37/3414 , H01J37/3423 , H01L31/0322 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： A sputtering target has a cylindrical backing tube having two edges and a sidewall comprising a middle portion located between two end portions. The sputtering material is on the backing tube. The sputtering material does not cover at least one end portion of the backing tube. The sputtering target also has a feature which prevents or reduces at least one of chalcogen buildup and arcing at the at least one end portion of the backing tube not covered by the sputtering material.
摘要翻译： 溅射靶具有具有两个边缘的圆柱形背衬管和包括位于两个端部之间的中间部分的侧壁。 溅射材料在背衬管上。 溅射材料不覆盖背衬管的至少一个端部。 溅射靶还具有防止或减少未被溅射材料覆盖的背衬管的至少一个端部处的硫属元素累积和电弧中的至少一种的特征。
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5.发明申请Sputtering Target Including a Feature to Reduce Chalcogen Build Up and Arcing on a Backing Tube 有权包含特征的溅射目标，以减少硫属元素在支撑管上的积聚和电弧公开(公告)号：US20130337602A1
公开(公告)日：2013-12-19
申请号：US13525593
申请日：2012-06-18
申请人： Robert Martinson , Heinrich Von Bunau , Mark Campello , Ron Rulkens , Tom Heckel , Johannes Vlcek
发明人： Robert Martinson , Heinrich Von Bunau , Mark Campello , Ron Rulkens , Tom Heckel , Johannes Vlcek
CPC分类号： C23C14/3407 , C23C14/0623 , H01J37/3414 , H01J37/3423 , H01L31/0322 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： A sputtering target has a cylindrical backing tube having two edges and a sidewall comprising a middle portion located between two end portions. The sputtering material is on the backing tube. The sputtering material does not cover at least one end portion of the backing tube. The sputtering target also has a feature which prevents or reduces at least one of chalcogen buildup and arcing at the at least one end portion of the backing tube not covered by the sputtering material.
摘要翻译： 溅射靶具有具有两个边缘的圆柱形背衬管和包括位于两个端部之间的中间部分的侧壁。 溅射材料在背衬管上。 溅射材料不覆盖背衬管的至少一个端部。 溅射靶还具有防止或减少未被溅射材料覆盖的背衬管的至少一个端部处的硫属元素累积和电弧中的至少一种的特征。
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公开(公告)号：US08906450B1
公开(公告)日：2014-12-09
申请号：US13247187
申请日：2011-09-28
CPC分类号： C23C24/04
摘要： A powder spray nozzle includes an inlet portion having an inlet diameter and an inlet length and an outlet portion having outlet diameter and an outlet length. The nozzle also includes an interface region between the inlet portion and the outlet portion having an interface diameter. A ratio of the inlet diameter to the inlet length is in a range of about 0.15 to 0.5.
摘要翻译： 粉末喷嘴包括具有入口直径和入口长度的入口部分和具有出口直径和出口长度的出口部分。 喷嘴还包括具有界面直径的入口部分和出口部分之间的界面区域。 入口直径与入口长度的比率在约0.15至0.5的范围内。
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