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19 条记录 (耗时 0.026 秒)

    Apparatus and method of forming a sputtering target
    6.
    发明授权
    Apparatus and method of forming a sputtering target 有权
    形成溅射靶的装置和方法

    公开(公告)号：US09150958B1

    公开(公告)日：2015-10-06

    申请号：US13355565

    申请日：2012-01-23

    申请人： Daniel R. Juliano ,  Bao Nguyen ,  Kedar Hardikar

    发明人： Daniel R. Juliano ,  Bao Nguyen ,  Kedar Hardikar ,  Abdelouahab Ziani

    IPC分类号： B30B5/02 ,  B30B9/22 ,  C23C14/34

    CPC分类号： C23C14/3414 ,  B22F3/03 ,  B22F3/04 ,  B22F2998/00

    摘要： A method and apparatus for forming a sputtering target are provided that includes a copper indium gallium sputtering target material on a backing structure. The sputtering target is formed by compressing pre-alloyed and atomized powders of Cu, In, and Ga at pressures below 35,000 psi. In some embodiments the sputtering target material contains Na, S, or Se. In other embodiments the sputtering target is formed by isothermal compression.

    摘要翻译： 提供一种用于形成溅射靶的方法和装置，其在背衬结构上包括铜铟镓溅射靶材料。 通过在低于35,000psi的压力下压缩Cu，In和Ga的预合金和雾化粉末来形成溅射靶。 在一些实施例中，溅射靶材料含有Na，S或Se。 在其它实施例中，通过等温压缩形成溅射靶。

    Enhanced sputter target manufacturing method
    7.
    发明申请
    Enhanced sputter target manufacturing method 审中-公开

    公开(公告)号：US20070017803A1

    公开(公告)日：2007-01-25

    申请号：US11284911

    申请日：2005-11-23

    申请人： Abdelouahab Ziani ,  Bernd Kunkel

    发明人： Abdelouahab Ziani ,  Bernd Kunkel

    IPC分类号： C23C14/00

    CPC分类号： C23C14/3414 ,  C22C19/07

    摘要： A method of manufacturing a sputter target the method including the step of preparing a plurality of raw materials into a composition corresponding to alloy system, the plurality of raw materials comprising pure elements or master alloys. The method also includes the step of heating the plurality of raw materials under vacuum or under a partial pressure of argon (Ar) to a fully liquid state to form a molten alloy corresponding to the alloy system, solidifying the molten alloy to form an ingot, and reheating the ingot to a fully liquid state to form a diffuse molten alloy. The method further includes the steps of rapidly solidifying the diffuse molten alloy into a homogeneous pre-alloyed powder material, admixing pure elemental powders to the homogeneous pre-alloyed powder material, consolidating the homogeneous pre-alloyed powder material into a fully dense homogeneous material, hot rolling the fully dense homogeneous material. Moreover, the method includes the steps of cold rolling the fully dense homogeneous material, and machining the fully dense homogenous material to form a sputter target.

    Low oxygen content alloy compositions
    8.
    发明申请
    Low oxygen content alloy compositions 审中-公开
    低含氧量合金组成

    公开(公告)号：US20060078457A1

    公开(公告)日：2006-04-13

    申请号：US10961215

    申请日：2004-10-12

    申请人： Abdelouahab Ziani ,  Jon Apprill ,  David Furgason

    发明人： Abdelouahab Ziani ,  Jon Apprill ,  David Furgason

    IPC分类号： C22C5/04 ,  C22C18/00 ,  C22C28/00 ,  C22C22/00 ,  C22C38/00 ,  C22C19/03 ,  C22C19/07

    CPC分类号： C22C5/04 ,  C22C18/00 ,  C22C19/005 ,  C22C19/07 ,  C22C22/00 ,  C22C28/00 ,  C22C30/00 ,  C22C38/00 ,  C23C14/3414

    摘要： Alloy compositions include Mn alloys that combine Mn with one element selected from Ga, In, Ni and Zn. Also included are Fe alloys and Co alloys in which Fe or Co are combined with either Pt or Pd. The alloy compositions form ordered compounds having L10 or L12 type crystalline structures within specified compositional ranges. In addition, the alloy compositions have low levels of impurities, such as oxygen and sulfur, which provide better performance in magnetic memory applications. The alloy compositions preferably are formed into sputtering targets used for thin film applications.

    摘要翻译： 合金组合物包括将Mn与选自Ga，In，Ni和Zn中的一种元素组合的Mn合金。 还包括Fe合金和Co合金，其中Fe或Co与Pt或Pd组合。 该合金组合物在特定的组成范围内形成具有L1> 0或L1 / 2>型结晶结构的有序化合物。 此外，合金组合物具有低水平的杂质，例如氧和硫，其在磁存储器应用中提供更好的性能。 合金组合物优选形成用于薄膜应用的溅射靶。

    Enhanced sputter target manufacturing method
    9.
    发明申请
    Enhanced sputter target manufacturing method 审中-公开

    公开(公告)号：US20080050263A1

    公开(公告)日：2008-02-28

    申请号：US11882502

    申请日：2007-08-02

    申请人： Abdelouahab Ziani ,  Bernd Kunkel

    发明人： Abdelouahab Ziani ,  Bernd Kunkel

    IPC分类号： B22F3/00 ,  B22F1/00 ,  B22F9/04

    CPC分类号： C23C14/3414 ,  C22C19/07

    摘要： A method of manufacturing a sputter target the method including the step of preparing a plurality of raw materials into a composition corresponding to alloy system, the plurality of raw materials comprising pure elements or master alloys. The method also includes the step of heating the plurality of raw materials under vacuum or under a partial pressure of argon (Ar) to a fully liquid state to form a molten alloy corresponding to the alloy system, solidifying the molten alloy to form an ingot, and reheating the ingot to a fully liquid state to form a diffuse molten alloy. The method further includes the steps of rapidly solidifying the diffuse molten alloy into a homogeneous pre-alloyed powder material, admixing pure elemental powders to the homogeneous pre-alloyed powder material, consolidating the homogeneous pre-alloyed powder material into a fully dense homogeneous material, hot rolling the fully dense homogeneous material. Moreover, the method includes the steps of cold rolling the fully dense homogeneous material, and machining the fully dense homogenous material to form a sputter target.

    Enhanced formulation of cobalt alloy matrix compositions
    10.
    发明申请
    Enhanced formulation of cobalt alloy matrix compositions 失效
    钴合金基体组合物的增强配方

    公开(公告)号：US20060233658A1

    公开(公告)日：2006-10-19

    申请号：US11237938

    申请日：2005-09-29

    申请人： Abdelouahab Ziani

    发明人： Abdelouahab Ziani

    IPC分类号： C22C29/12

    CPC分类号： C22C32/0026 ,  B22F2998/10 ,  B22F2999/00 ,  C22C19/07 ,  C22F1/10 ,  C23C14/3414 ,  C22C1/05 ,  B22F9/04 ,  B22F3/1216 ,  B22F3/15 ,  B22F2201/20

    摘要： A method for manufacturing a single-element matrix cobalt-based granular media alloy composition formulated as Cof1-(MuOv)f2, M representing a base metal selected from the group consisting of magnesium (Mg), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), nickel (Ni), copper (Cu), zinc (Zn), aluminum (Al), silicon (Si), yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), indium (In), lanthanum (La), hafnium (Hf), tantalum (Ta), and tungsten (W), u and v representing the number of atoms of base metal M and oxygen (O) per oxide formula, respectively, and f1 and f2 being mole fractions represented by the equation f1+(u+v)f2=1. The method includes the steps of blending a Co-M master alloy powder and a Cou′Ov′ powder into a corresponding (CoaM1−a)f1′-(Cou′Ov′)f2′ formula, and densifying the blended powders.

    摘要翻译： 一种制备单组分基体钴基颗粒介质合金组合物的方法，该组合物被配制成如下的单元素基质钴基颗粒状介质合金组合物：（M 1， M代表选自镁（ⅰ）的贱金属（Ⅴ） （Ti），钒（V），铬（Cr），锰（Mn），铁（Fe），镍（Ni），铜（Cu），锌（Zn），铝（Al） Si），钇（Y），锆（Zr），铌（Nb），钼（Mo），钌（Ru），铟（In），镧（La），铪（Hf） （W），u和v分别代表贱金属M的原子数和每个氧化物式的氧（O），f 1和f 2 2是摩尔分数 由等式f 1 +（u + v）f 2 2 = 1表示。 该方法包括以下步骤：将Co-M母合金粉末和CoM O> v>粉末混合到相应的（Co>>>>>>>>> - - - - （ - ） - （ - ） - （ - ） - ' v v> and and and and and and and and and and and and and and and and and and and and and and and and and and and and and and and and and and and and and 致密化混合粉末。