摘要:
Magnetic shift registers in which data writing and reading is accomplished by moving the magnetic domain walls by electric current. Various embodiments of domain wall nodes or anchors that stabilize a domain wall are provided. In some embodiments, the wall anchors are elements separate from the magnetic track. In other embodiments, the wall anchors are disturbances in the physical configuration of the magnetic track. In still other embodiments, the wall anchors are disturbances in the material of the magnetic track.
摘要:
Magnetic shift registers in which data writing and reading is accomplished by moving the magnetic domain walls by electric current. Various embodiments of domain wall nodes or anchors that stabilize a domain wall are provided. In some embodiments, the wall anchors are elements separate from the magnetic track. In other embodiments, the wall anchors are disturbances in the physical configuration of the magnetic track. In still other embodiments, the wall anchors are disturbances in the material of the magnetic track.
摘要:
A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack.
摘要:
A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack.
摘要:
A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack.
摘要:
A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack.
摘要:
A process for removing trioxane from a use stream I of formaldehyde, trioxane and water, by a) providing a use stream I which comprises formaldehyde as the main component and trioxane and water as the secondary components, b) feeding the use stream I, a recycle stream V and a recycle stream VII which comprises formaldehyde as the main component and water and trioxane as the secondary components into a first distillation stage and distilling to obtain a stream II a steam III and formaldehyde as the and a steam X c) distilling the stream III, in a second distillation stage the pressure in the second distillation stage being from 0.1 to 15 bar higher than the pressure in the first distillation stage, to obtain a stream IV and the recycle stream V as the secondary components, d) feeding the stream X and if appropriate a stream IX into a third distillation stage and distilling at a pressure of from 1 to 10 bar to obtain a stream VI which consists substantially of water and a recycle stream VII which comprises formaldehyde as the main component and water and trioxane as the secondary components.
摘要:
Process for distillatively separating a mixture containing a vinyl ether of the general formula (I) R1—O—CH═CH2 (I) and alcohol of the general formula (II) R2—OH (II) in which R1 and R2 are each independently a saturated or unsaturated, aliphatic or cycloaliphatic radical having from 2 to 10 carbon atoms, and in which the alcohol (II) has a boiling point which is at least 1° C. higher, measured at or extrapolated to 0.1 MPa abs, than the vinyl ether (I), by a) passing the mixture into a first distillation column and withdrawing, as a top product, an azeotrope containing vinyl ether (I) and alcohol (II) and, as a bottom product, a stream enriched with the alcohol (II); b) passing the azeotrope containing vinyl ether (I) and alcohol (II) from the first distillation column into a second distillation column which is operated at a pressure which is from 0.01 to 3 MPa higher compared to the first distillation column, and withdrawing, as a bottom product or gaseous sidestream in the stripping section, the vinyl ether (I) and, as a top product, an azeotrope containing vinyl ether (I) and alcohol (II); and c) recycling the azeotrope containing vinyl ether (I) and alcohol (II) from the second distillation column into the first distillation column.
摘要:
The present invention relates to a process for distillatively removing pure trioxane from a feedstream (I) comprising trioxane in a proportion of at least 50% by weight, based on the total weight of the feedstream (I), and additionally formaldehyde and water, which comprises feeding the feedstream I and a further aqueous stream (II) which does not contain any components extraneous to the feedstream to a dividing wall column (TWK1) having a dividing wall TW which is arranged substantially perpendicularly and divides the column interior into a feed region (A1), a withdrawal reaction (B1), an upper combined column region (C1) and a lower combined column region (D1), and drawing off from the first dividing wall column (TWK1) a bottom stream (III) comprising pure trioxane and a sidestream (IV) at the withdrawal region (B1), comprising pure water.
摘要:
Process for distillatively separating a mixture containing a vinyl ether of the general formula (I) R1—O—CH═CH2 (I) and alcohol of the general formula (II) R2—OH (II) in which R1 and R2 are each independently a saturated or unsaturated, aliphatic or cycloaliphatic radical having from 2 to 10 carbon atoms, and in which the alcohol (II) has a boiling point which is at least 1° C. higher, measured at or extrapolated to 0.1 MPa abs, than the vinyl ether (I), by a) passing the mixture into a first distillation column and withdrawing, as a top product, an azeotrope containing vinyl ether (I) and alcohol (II) and, as a bottom product, a stream enriched with the alcohol (II); b) passing the azeotrope containing vinyl ether (I) and alcohol (II) from the first distillation column into a second distillation column which is operated at a pressure which is from 0.01 to 3 MPa higher compared to the first distillation column, and withdrawing, as a bottom product or gaseous sidestream in the stripping section, the vinyl ether (I) and, as a top product, an azeotrope containing vinyl ether (I) and alcohol (II); and c) recycling the azeotrope containing vinyl ether (I) and alcohol (II) from the second distillation column into the first distillation column.