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8 条记录 (耗时 0.041 秒)

    NON-CONTACT RF STRAIN SENSOR
    3.
    发明申请
    NON-CONTACT RF STRAIN SENSOR 审中-公开
    非接触式RF应变传感器

    公开(公告)号：US20070186677A1

    公开(公告)日：2007-08-16

    申请号：US11674835

    申请日：2007-02-14

    申请人： James Zunino ,  John Federici ,  Hee Lim

    发明人： James Zunino ,  John Federici ,  Hee Lim

    IPC分类号： G01N3/20

    CPC分类号： G01L1/148 ,  G01M5/0041 ,  G01M5/0091 ,  G01N2203/0629

    摘要： A passive, non-contact radio frequency (RF) strain sensor changes resonant frequency as it is deformed. The sensor's resonant frequency can be determined by monitoring the signals transmitted and/or reflected therefrom upon illumination of the sensor by a known RF signal source. The sensor can be implemented using thin film techniques on a flexible thin substrate that can be attached to the surface of a structural member of interest.

    摘要翻译： 无源，非接触射频（RF）应变传感器在谐振频率变形时改变谐振频率。 传感器的谐振频率可以通过在通过已知的RF信号源照射传感器时监测从其发送和/或反射的信号来确定。 传感器可以使用薄膜技术在柔性薄基底上实现，该柔性薄基底可以连接到感兴趣的结构构件的表面。

    Non-Linear Terahertz Spectroscopy for Defect Density Identification in High K Dielectric Films
    4.
    发明申请
    Non-Linear Terahertz Spectroscopy for Defect Density Identification in High K Dielectric Films 失效
    非线性太赫兹光谱在高K介质膜中的缺陷密度识别

    公开(公告)号：US20070235650A1

    公开(公告)日：2007-10-11

    申请号：US11697357

    申请日：2007-04-06

    申请人： John Federici ,  Haim Grebel ,  Hakan Altan

    发明人： John Federici ,  Haim Grebel ,  Hakan Altan

    IPC分类号： G01J5/02

    CPC分类号： G01J3/42 ,  G01N21/3563 ,  G01N21/3581 ,  G01N21/636 ,  G01N21/9501

    摘要： Methods to infer the density of defects in high κ dielectric films in a non-contact, non-invasive and non-destructive manner. THz radiation is employed to measure the change in electrical conductivity of the films before and after illumination with visible light, where the visible light photoionizes the defects thereby changing the electrical conductivity and changing the transmission (or reflection) of THz radiation from the films. The disclosed techniques can be employed to make measurements as soon as wafers are fabricated. The technology is applicable to wafers of any size.

    摘要翻译： 以非接触，非侵入性和非破坏性方式推断高κ电介质膜缺陷密度的方法。 使用THz辐射来测量在用可见光照射之前和之后的膜的导电性的变化，其中可见光使缺陷光离子化从而改变导电性并改变来自膜的THz辐射的透射（或反射）。 所公开的技术可以用于在制造晶片时进行测量。 该技术适用于任何尺寸的晶圆。

    Apparatus and method for non-invasive measurement of stretch
    6.
    发明授权
    Apparatus and method for non-invasive measurement of stretch 失效
    非侵入性测量拉伸的装置和方法

    公开(公告)号：US06324419B1

    公开(公告)日：2001-11-27

    申请号：US09179571

    申请日：1998-10-27

    申请人： Nejat Guzelsu ,  Thomas W. Findley ,  John Federici ,  Hans R. Chaudhry ,  Arthur B. Ritter

    发明人： Nejat Guzelsu ,  Thomas W. Findley ,  John Federici ,  Hans R. Chaudhry ,  Arthur B. Ritter

    IPC分类号： A61B500

    CPC分类号： A61B5/444 ,  A61B5/0059 ,  A61B5/445

    摘要： A method and apparatus for noninvasive, non-contacting measurement of stretches and deformations on the surface of a material or an object by utilizing changes which occur in the reflection characteristics of the material due to an applied stretch load is presented. The present invention may assume various embodiments for different applications, such as soft tissue stretch determination, plastic material deformation measurements and sensors which can be integrated into various measurement devices.

    摘要翻译： 提出了一种用于通过利用由于所施加的拉伸载荷引起的材料的反射特性中发生的变化而在材料或物体的表面上进行非侵入式非接触式测量拉伸和变形的方法和装置。 本发明可以假设用于不同应用的各种实施例，例如软组织拉伸测定，塑性材料变形测量以及可以集成到各种测量装置中的传感器。

    Terahertz imaging system and method
    7.
    发明授权
    Terahertz imaging system and method 失效
    太赫兹成像系统及方法

    公开(公告)号：US06815683B2

    公开(公告)日：2004-11-09

    申请号：US10444577

    申请日：2003-05-23

    申请人： John Federici ,  Robert Barat ,  Dale E. Gary

    发明人： John Federici ,  Robert Barat ,  Dale E. Gary

    IPC分类号： G01N2100

    CPC分类号： G01S13/887 ,  G01N21/3563 ,  G01N21/3581 ,  G01N2021/1793 ,  G01N2021/3595 ,  G01S13/89

    摘要： THz imaging apparatus and methods are provided for rapidly and effectively examining a region of interest to determine the presence of specified compositions. The apparatus includes means for generating electromagnetic radiation of a desired terahertz frequency suitable for the examination, and for rendering the radiation incident at the region of interest. Detector means are provided at a plurality of points in a plane spaced from the region of interest, for detecting the terahertz radiation reflected from or transmitted through the region. Means are provided for converting the detected terahertz radiation to an image of the region of interest from which the presence of the specified compositions are determinable.

    摘要翻译： 提供太赫兹成像装置和方法用于快速有效地检查感兴趣区域以确定指定组合物的存在。 该装置包括用于产生适合于检查的期望的太赫兹频率的电磁辐射的装置，以及用于使在感兴趣的区域入射的辐射。 检测器装置设置在与感兴趣区域间隔开的平面中的多个点处，用于检测从该区域反射或透过该区域的太赫兹辐射。 提供了用于将检测到的太赫兹辐射转换成可确定特定组合物的存在的感兴趣区域的图像的装置。

    Terahertz imaging for near field objects
    8.
    发明申请
    Terahertz imaging for near field objects 失效
    太赫兹成像近场物体

    公开(公告)号：US20060054824A1

    公开(公告)日：2006-03-16

    申请号：US11037507

    申请日：2005-01-18

    申请人： John Federici ,  Dale Gary

    发明人： John Federici ,  Dale Gary

    IPC分类号： G01J5/02

    CPC分类号： G01J3/42 ,  G01N21/3563 ,  G01N21/3581 ,  G01S7/4816 ,  G01S13/89 ,  G01S17/89

    摘要： Near field imaging using a THz imaging system is realized by utilizing an interferometric imaging detector array that includes detector elements disposed on a surface curved, physically or artificially, to match substantially the curvature of the wave front for received THz signals. Generally, the near field is an environment wherein the distance to an object of interest is on the order of 10-100 times larger than the physical size of the THz imaging array. Typical distances from the object or target to the imaging array is anticipated to be in the 0.5 m-50 m range. Curvature of the detector array corrects a distortion problem in prior THz imaging systems that utilized planar interferometric imaging arrays based on a planar wave front assumption for received THz signals.

    摘要翻译： 使用THz成像系统的近场成像通过利用干涉成像检测器阵列来实现，所述干涉测量成像检测器阵列包括设置在物理或人为地弯曲的表面上的检测器元件，以基本上匹配用于接收的THz信号的波前的曲率。 通常，近场是其中到感兴趣对象的距离大于THz成像阵列的物理大小的10-100倍的环境。 从物体或目标到成像阵列的典型距离预计在0.5m-50m范围内。 检测器阵列的曲率校正了以前的THz成像系统中的失真问题，该系统利用基于接收的THz信号的平面波前假设的平面干涉成像阵列。