Semiconductor wafer manufacturing method and apparatus for an improved heat exchanger for a photoresist developer
    5.
    发明授权
    Semiconductor wafer manufacturing method and apparatus for an improved heat exchanger for a photoresist developer 有权
    用于光致抗蚀剂显影剂的改进的热交换器的半导体晶片制造方法和装置

    公开(公告)号:US06318913B2

    公开(公告)日:2001-11-20

    申请号:US09829912

    申请日:2001-04-11

    IPC分类号: G03D500

    摘要: Embodiments of the invention comprise a new device and technique to realize an improved temperature control for a chemical photoresist developer utilizing a preexisting integrated single reservoir. This improvement is achieved by providing for a modified temperature control unit and procedure. The temperature control unit preferably comprises a plurality of heat exchanger conduits that are each supplied by an inlet manifold, and then exhausted via an outlet manifold. The temperature control unit preferably extends fully within the modified nozzle unit. By utilizing the improved temperature control unit, a first and second volumetric allocation of developer may be issued so that both may be dispensed within a relatively short period of time upon a photoresist layer surface in a temperature controlled state.

    摘要翻译: 本发明的实施例包括一种新的装置和技术,以实现利用预先存在的集成单个储存器的化学光刻胶显影剂的改进的温度控制。 通过提供改进的温度控制单元和程序来实现这一改进。 温度控制单元优选地包括多个热交换器管道,每个热交换器管道由进口歧管提供,然后经由出口歧管排出。 温度控制单元优选在改进的喷嘴单元内完全延伸。 通过利用改进的温度控制单元,可以发出显影剂的第一和第二体积分配,使得两者可以在相对较短的时间内被分配在温度受控状态的光致抗蚀剂层表面上。

    Apparatus for automatically cleaning resist nozzle
    6.
    发明授权
    Apparatus for automatically cleaning resist nozzle 有权
    自动清洗抗蚀剂喷嘴的设备

    公开(公告)号:US06418946B1

    公开(公告)日:2002-07-16

    申请号:US09756615

    申请日:2001-01-05

    IPC分类号: B08B302

    摘要: An apparatus for cleaning dried photoresist from a photoresist dispensing nozzle. The tip of the photoresist dispensing nozzle is inserted through an opening in a nozzle base. A catch pan is positioned beneath the nozzle base. A solvent dispensing needle is inserted through an opening in the catch pan to face the photoresist dispensing nozzle tip and sprays solvent onto the photoresist dispensing nozzle tip. The catch pan collects the solvent and dissolved photoresist particles. The catch pan includes a drain for draining the solvent and the dissolved photoresist particles.

    摘要翻译: 一种用于从光刻胶分配喷嘴清洁干燥的光致抗蚀剂的设备。 光刻胶分配喷嘴的尖端通过喷嘴基座中的开口插入。 捕集盘位于喷嘴底部下方。 溶剂分配针通过捕获盘中的开口插入以面对光刻胶分配喷嘴尖端并将溶剂喷射到光致抗蚀剂分配喷嘴尖端上。 捕集阱收集溶剂和溶解的光致抗蚀剂颗粒。 捕集盘包括用于排出溶剂和溶解的光致抗蚀剂颗粒的排水口。

    Stepper lens specific reticle compensation for critical dimension control
    7.
    发明授权
    Stepper lens specific reticle compensation for critical dimension control 失效
    步进透镜专用掩模版补偿关键尺寸控制

    公开(公告)号:US06529623B1

    公开(公告)日:2003-03-04

    申请号:US09386467

    申请日:1999-08-31

    申请人: Eric Kent

    发明人: Eric Kent

    IPC分类号: G06K900

    CPC分类号: G03F7/706 G03F7/70433

    摘要: In order to obviate the problem wherein localized lens aberration causes a pattern of low yield which cannot be corrected by conventional stepper correction/adjustment and which leads to the determination that the stepper lens is the source of the problem, the reticle is modified to produce an error which is selected to cancel the error that is being produced by the lens aberration and thus enable desired critical dimensions to produce on all dice. The modified reticle is then dedicated to the particular stepper.

    摘要翻译: 为了避免局部透镜像差引起不能通过常规步进校正/调整校正的低产量图案并且导致步进透镜是问题的根源的确定的问题,修改掩模版以产生 该误差被选择以消除由透镜像差产生的误差,从而使得能够在所有骰子上产生所需的临界尺寸。 修改后的掩模版然后专用于特定的步进机。

    Method for detecting adjustment error in photolithographic stepping printer
    8.
    发明授权
    Method for detecting adjustment error in photolithographic stepping printer 失效
    光刻步进式打印机调整误差检测方法

    公开(公告)号:US06245584B1

    公开(公告)日:2001-06-12

    申请号:US09346632

    申请日:1999-07-01

    IPC分类号: H01L2166

    CPC分类号: H01L22/34

    摘要: An adjustment error in a photolithographic stepping printer is detected by applying photoresist to a semiconductor wafer, and exposing the wafer to substantially identical light images in multiple locations using a stepping printer. The light images are defined by an optical reticle and include a plurality of lines or other features that are spaced from each other at approximately the resolution limit of the printer. Developer (16) is applied to the wafer to produce visible images corresponding to the light images. The visible images function as diffraction gratings which reflect light from the wafer. The visible images are inspected optoelectronically or manually. An adjustment error is determined to exist if the visible images appear substantially identical but are uneven or otherwise abnormal.

    摘要翻译: 通过对半导体晶片施加光致抗蚀剂,并且使用步进式打印机将晶片暴露于多个位置的基本相同的光图像来检测光刻步进打印机中的调整误差。 光图像由光学掩模版限定,并且包括在打印机的大致分辨率极限处彼此间隔开的多个线或其他特征。 将显影剂(16)施加到晶片以产生对应于光图像的可见图像。 可视图像用作反射来自晶片的光的衍射光栅。 光电或手动检查可见图像。 如果可见图像看起来基本相同但不均匀或异常,则确定存在调整误差。

    Exposure correction based on reflective index for photolithographic process control
    9.
    发明授权
    Exposure correction based on reflective index for photolithographic process control 有权
    基于光刻过程控制反射指数的曝光校正

    公开(公告)号:US06482573B1

    公开(公告)日:2002-11-19

    申请号:US09492216

    申请日:2000-01-27

    IPC分类号: G03C556

    CPC分类号: G03F7/70625 Y10S430/151

    摘要: Critical dimension variation of photolithographically formed features on a semiconductor substrate is reduced by measuring the reflectivity of a photoresist layer and an underlying layer, such as a polysilicon layer, and adjusting the exposure level of the photoresist in accordance with the measured reflectivity. This allows precise control of feature width on the photoresist, which in turn allows precision etching of the underlying layer to accurately form a feature, such as a gate electrode.

    摘要翻译: 通过测量光致抗蚀剂层和诸如多晶硅层的下层的反射率,并根据所测量的反射率来调整光致抗蚀剂的曝光水平,可减少半导体衬底上的光刻形成特征的临界尺寸变化。 这允许对光致抗蚀剂上的特征宽度的精确控制,这又允许精确地蚀刻下层以精确地形成特征,例如栅电极。