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公开(公告)号：US07943406B2
公开(公告)日：2011-05-17
申请号：US12327882
申请日：2008-12-04
IPC分类号： H01L21/00
CPC分类号： H01L33/24 , H01L21/2654 , H01L33/025 , H01L33/145 , H01L33/32 , H01L33/44 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. Some embodiments include a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, wherein portions of the epitaxial region are patterned into a mesa and wherein the sidewalls of the mesa comprise a resistive Group III nitride region for electrically isolating portions of the p-n junction. In method embodiments disclosed, the resistive border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask. In some method embodiments, a mesa is formed in the epitaxial region prior to implantation. During implantation, the epiwafer is mounted at an angle such that ions are implanted directly into the sidewalls of the mesa, thereby rendering portions of the mesa semi-insulating. The epiwafer may be rotated during ion implantation.
摘要翻译： 半导体发光二极管包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型外延层形成pn结， 型层和n型外延层上的电阻性氮化镓区，并且邻近p型外延层，用于电隔离pn结的部分。 在p型外延层上形成金属接触层。 一些实施例包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型层形成pn结， 其中所述外延区域的部分被图案化成台面，并且其中所述台面的侧壁包括用于电绝缘所述pn结的部分的电阻性III族氮化物区域。 在公开的方法实施例中，通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻边界。 可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。 在一些方法实施例中，在植入之前在外延区域中形成台面。 在植入期间，外延片安装成一定角度，使得离子直接注入到台面的侧壁中，从而使台面的部分半绝缘。 在离子注入期间，外延膜可以旋转。
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公开(公告)号：US20090104726A1
公开(公告)日：2009-04-23
申请号：US12327882
申请日：2008-12-04
CPC分类号： H01L33/24 , H01L21/2654 , H01L33/025 , H01L33/145 , H01L33/32 , H01L33/44 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. Some embodiments include a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, wherein portions of the epitaxial region are patterned into a mesa and wherein the sidewalls of the mesa comprise a resistive Group III nitride region for electrically isolating portions of the p-n junction. In method embodiments disclosed, the resistive border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask. In some method embodiments, a mesa is formed in the epitaxial region prior to implantation. During implantation, the epiwafer is mounted at an angle such that ions are implanted directly into the sidewalls of the mesa, thereby rendering portions of the mesa semi-insulating. The epiwafer may be rotated during ion implantation.
摘要翻译： 半导体发光二极管包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型外延层形成pn结， 型层和n型外延层上的电阻性氮化镓区，并且邻近p型外延层，用于电隔离pn结的部分。 在p型外延层上形成金属接触层。 一些实施例包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型层形成pn结， 其中所述外延区域的部分被图案化成台面，并且其中所述台面的侧壁包括用于电绝缘所述pn结的部分的电阻性III族氮化物区域。 在公开的方法实施例中，通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻边界。 可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。 在一些方法实施例中，在植入之前在外延区域中形成台面。 在植入期间，外延片安装成一定角度，使得离子直接注入到台面的侧壁中，从而使台面的部分半绝缘。 在离子注入期间，外延膜可以旋转。
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3.发明授权Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices 有权处理碳化硅衬底以改善外延沉积以及所得结构和器件的方法公开(公告)号：US07675068B2
公开(公告)日：2010-03-09
申请号：US11243581
申请日：2005-10-05
IPC分类号： H01L31/0312
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02658 , H01L21/046 , H01L21/2003 , H01L29/6606 , H01L33/0062 , Y10S438/931
摘要： A silicon carbide structure is disclosed that is suitable for use as a substrate in the manufacture of electronic devices such as light emitting diodes. The structure includes a silicon carbide wafer having a first and second surface and having a predetermined conductivity type and an initial carrier concentration; a region of implanted dopant atoms extending from the first surface into the silicon carbide wafer to a predetermined depth, with the region having a higher carrier concentration than the initial carrier concentration in the remainder of the wafer; and an epitaxial layer on the first surface of the silicon carbide wafer.
摘要翻译： 公开了一种碳化硅结构，其适用于制造诸如发光二极管的电子器件中的基板。 该结构包括具有第一表面和第二表面并具有预定导电类型和初始载流子浓度的碳化硅晶片; 注入掺杂剂原子的区域从第一表面延伸到碳化硅晶片到预定深度，该区域具有比晶片剩余部分中的初始载流子浓度更高的载流子浓度; 以及在碳化硅晶片的第一表面上的外延层。
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公开(公告)号：US07138291B2
公开(公告)日：2006-11-21
申请号：US10248586
申请日：2003-01-30
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02658 , H01L21/046 , H01L21/2003 , H01L29/6606 , H01L33/0062 , Y10S438/931
摘要： A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of a conductive silicon carbide wafer having the same conductivity type as the implanting ions at one or more predetermined dopant concentrations and implant energies to form a dopant profile, annealing the implanted wafer, and growing an epitaxial layer on the implanted first surface of the wafer.
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5.发明授权Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices 有权处理碳化硅衬底以改善外延沉积以及所得结构和器件的方法公开(公告)号：US07294859B2
公开(公告)日：2007-11-13
申请号：US11057661
申请日：2005-02-14
IPC分类号： H01L29/15
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02658 , H01L21/046 , H01L21/2003 , H01L29/6606 , H01L33/0062 , Y10S438/931
摘要： A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of a conductive silicon carbide wafer having the same conductivity type as the implanting ions at one or more predetermined dopant concentrations and implant energies to form a dopant profile, annealing the implanted wafer, and growing an epitaxial layer on the implanted first surface of the wafer.
摘要翻译： 公开了一种用于处理碳化硅衬底以改进其上的外延沉积并用作制造诸如发光二极管的器件中的前体的方法。 该方法包括以下步骤：将第一导电类型的掺杂剂原子注入具有与一种或多种预定掺杂剂浓度的注入离子相同的导电类型的导电碳化硅晶片的第一表面，并且注入能量以形成掺杂剂分布，退火 所述植入的晶片，以及在所述晶片的植入的第一表面上生长外延层。
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6.发明授权Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices 有权处理碳化硅衬底以改善外延沉积以及所得结构和器件的方法公开(公告)号：US08822315B2
公开(公告)日：2014-09-02
申请号：US11022496
申请日：2004-12-22
IPC分类号： H01L21/425 , H01L33/00 , H01L21/20 , H01L21/04 , H01L29/66
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02658 , H01L21/046 , H01L21/2003 , H01L29/6606 , H01L33/0062 , Y10S438/931
摘要： A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of a conductive silicon carbide wafer having the same conductivity type as the implanting ions at one or more predetermined dopant concentrations and implant energies to form a dopant profile, annealing the implanted wafer, and growing an epitaxial layer on the implanted first surface of the wafer.
摘要翻译： 公开了一种用于处理碳化硅衬底以改进其上的外延沉积并用作制造诸如发光二极管的器件中的前体的方法。 该方法包括以下步骤：将第一导电类型的掺杂剂原子注入具有与一种或多种预定掺杂剂浓度的注入离子相同的导电类型的导电碳化硅晶片的第一表面，并且注入能量以形成掺杂剂分布，退火 所述植入的晶片，以及在所述晶片的植入的第一表面上生长外延层。
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公开(公告)号：US20050194584A1
公开(公告)日：2005-09-08
申请号：US10987627
申请日：2004-11-12
申请人： David Slater , John Edmond , Alexander Suvorov , Iain Hamilton
发明人： David Slater , John Edmond , Alexander Suvorov , Iain Hamilton
IPC分类号： H01L29/06 , H01L31/0328
CPC分类号： H01L21/2654 , H01L33/025 , H01L33/145 , H01L33/24 , H01L33/32 , H01L33/44 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. Some embodiments include a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, wherein portions of the epitaxial region are patterned into a mesa and wherein the sidewalls of the mesa comprise a resistive Group III nitride region for electrically isolating portions of the p-n junction. In method embodiments disclosed, the resistive border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask. In some method embodiments, a mesa is formed in the epitaxial region prior to implantation. During implantation, the epiwafer is mounted at an angle such that ions are implanted directly into the sidewalls of the mesa, thereby rendering portions of the mesa semi-insulating. The epiwafer may be rotated during ion implantation.
摘要翻译： 半导体发光二极管包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型外延层形成pn结， 型层和n型外延层上的电阻性氮化镓区，并且邻近p型外延层，用于电隔离pn结的部分。 在p型外延层上形成金属接触层。 一些实施例包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型层形成pn结， 其中所述外延区域的部分被图案化成台面，并且其中所述台面的侧壁包括用于电绝缘所述pn结的部分的电阻性III族氮化物区域。 在公开的方法实施例中，通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻边界。 可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。 在一些方法实施例中，在植入之前在外延区域中形成台面。 在植入期间，外延片安装成一定角度，使得离子直接注入到台面的侧壁中，从而使台面的部分半绝缘。 在离子注入期间，外延膜可以旋转。
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8.发明授权公开(公告)号：US06909119B2
公开(公告)日：2005-06-21
申请号：US10799140
申请日：2004-03-12
IPC分类号： H01L21/04 , H01L31/0224 , H01L33/00 , H01L33/34 , H01L33/36 , H01L31/0312
CPC分类号： H01L31/022408 , H01L21/046 , H01L21/0485 , H01L33/0095 , H01L33/34 , H01L33/36
摘要： A semiconductor device is disclosed that includes a semiconductor substrate having a first surface and a second surface and a first conductivity type and at least one epitaxial layer on the first surface of the semiconductor substrate. The epitaxial layer is formed of a material with a dissociation temperature below that of the semiconductor substrate. A zone of increased carrier concentration is in the semiconductor substrate and extends from the second surface of the semiconductor material toward the first surface. A layer of metal is deposited on the second surface of the semiconductor substrate and forms an ohmic contact at the interface of the metal and the zone of increased carrier concentration.
摘要翻译： 公开了一种半导体器件，其包括在半导体衬底的第一表面上具有第一表面和第二表面以及第一导电类型和至少一个外延层的半导体衬底。 外延层由解离温度低于半导体衬底的材料形成。 增加载流子浓度的区域在半导体衬底中并从半导体材料的第二表面朝向第一表面延伸。 金属层沉积在半导体衬底的第二表面上，并在金属界面和载流子浓度增加的区域形成欧姆接触。
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公开(公告)号：US07943954B2
公开(公告)日：2011-05-17
申请号：US12507288
申请日：2009-07-22
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/305
摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.
摘要翻译： 半导体发光二极管包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型外延层形成pn结， 型层和n型外延层上的电阻性氮化镓区，并且邻近p型外延层，用于电隔离pn结的部分。 在p型外延层上形成金属接触层。 在公开的方法实施例中，通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻性氮化镓边界。 可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。
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公开(公告)号：US20090309124A1
公开(公告)日：2009-12-17
申请号：US12507288
申请日：2009-07-22
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/305
摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.
摘要翻译： 半导体发光二极管包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型外延层形成pn结， 型层和n型外延层上的电阻性氮化镓区，并且邻近p型外延层，用于电隔离pn结的部分。 在p型外延层上形成金属接触层。 在公开的方法实施例中，通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻性氮化镓边界。 可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。
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