公开(公告)号：US08497556B2

公开(公告)日：2013-07-30

申请号：US13607023

申请日：2012-09-07

申请人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

发明人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

IPC分类号： H01L31/119

CPC分类号： H01L29/0684 ,  H01L21/84 ,  H01L27/1203

摘要： A semiconductor product has different active thicknesses of silicon on a single semiconductor substrate. The thickness of the silicon layer is changed either by selectively adding silicon or subtracting silicon from an original layer of silicon. The different active thicknesses are suitable for use in different types of devices, such as diodes and transistors.

摘要翻译： 半导体产品在单个半导体衬底上具有不同的有源厚度的硅。 通过选择性地添加硅或从原始硅层减去硅来改变硅层的厚度。 不同的有源厚度适用于不同类型的器件，例如二极管和晶体管。

公开(公告)号：US07053400B2

公开(公告)日：2006-05-30

申请号：US10838330

申请日：2004-05-05

申请人： Sey-Ping Sun ,  David E. Brown

发明人： Sey-Ping Sun ,  David E. Brown

IPC分类号： H01L31/072

CPC分类号： H01L29/7843 ,  H01L21/823807 ,  H01L21/823828 ,  H01L29/1054 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656

摘要： The carrier mobility in transistor channel regions of Si—Ge devices is increased by employing a stressed liner. Embodiments include applying a high compressive or tensile stressed film overlying relaxed source/drain regions. Other embodiments include applying a high compressively or high tensilely stressed film, after post silicide spacer removal, over gate electrodes and strained Si source/drain regions of P-channel or N-channel transistors, respectively.

摘要翻译： Si-Ge器件的晶体管沟道区域中的载流子迁移率通过使用应力衬里而增加。 实施例包括施加覆盖松弛的源极/漏极区域的高压缩或拉伸应力膜。 其他实施例包括分别在栅极电极和P沟道或N沟道晶体管的应变Si源极/漏极区之后施加高度压缩或高拉伸应力膜，在硅化物间隔物去除之后。

公开(公告)号：US20110272791A1

公开(公告)日：2011-11-10

申请号：US13184050

申请日：2011-07-15

申请人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

发明人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

IPC分类号： H01L27/06 ,  H01L21/20

CPC分类号： H01L29/0684 ,  H01L21/84 ,  H01L27/1203

摘要： A method far farming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon layer at the exposed regions is changed, either by adding silicon or subtracting silicon from the layer at the exposed regions. Once the mask is removed, the silicon layer has regions of different active thicknesses, respectively suitable for use in different types of devices, such as diodes and transistors.

摘要翻译： 在同一硅层上种植不同有源厚度的方法包括掩蔽硅层并暴露硅层的选定区域。 通过在曝光区域从层中添加硅或从中减去硅来改变暴露区域处的硅层的厚度。 一旦去除掩模，硅层就具有不同有源厚度的区域，分别适用于不同类型的器件，例如二极管和晶体管。

公开(公告)号：US08263453B2

公开(公告)日：2012-09-11

申请号：US13184050

申请日：2011-07-15

申请人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

发明人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

IPC分类号： H01L21/8238

CPC分类号： H01L29/0684 ,  H01L21/84 ,  H01L27/1203

摘要： A method far farming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon layer at the exposed regions is changed, either by adding silicon or subtracting silicon from the layer at the exposed regions. Once the mask is removed, the silicon layer has regions of different active thicknesses, respectively suitable for use in different types of devices, such as diodes and transistors.

摘要翻译： 在同一硅层上种植不同有源厚度的方法包括掩蔽硅层并暴露硅层的选定区域。 通过在曝光区域从层中添加硅或从中减去硅来改变暴露区域处的硅层的厚度。 一旦去除掩模，硅层就具有不同有源厚度的区域，分别适用于不同类型的器件，例如二极管和晶体管。

公开(公告)号：US20100151660A1

公开(公告)日：2010-06-17

申请号：US12691477

申请日：2010-01-21

申请人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

发明人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

IPC分类号： H01L21/20

CPC分类号： H01L29/0684 ,  H01L21/84 ,  H01L27/1203

摘要： A method for forming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon layer at the exposed regions is changed, either by adding silicon or subtracting silicon from the layer at the exposed regions. Once the mask is removed, the silicon layer has regions of different active thicknesses, respectively suitable for use in different types of devices, such as diodes and transistors.

摘要翻译： 在同一硅层上形成不同有源厚度的方法包括掩蔽硅层并暴露硅层的选定区域。 通过在曝光区域从层中添加硅或从中减去硅来改变暴露区域处的硅层的厚度。 一旦去除掩模，硅层就具有不同有源厚度的区域，分别适用于不同类型的器件，例如二极管和晶体管。

公开(公告)号：US07666735B1

公开(公告)日：2010-02-23

申请号：US11053935

申请日：2005-02-10

申请人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

发明人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

IPC分类号： H01L21/8238

CPC分类号： H01L29/0684 ,  H01L21/84 ,  H01L27/1203

摘要： A method for forming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon layer at the exposed regions is changed, either by adding silicon or subtracting silicon from the layer at the exposed regions. Once the mask is removed, the silicon layer has regions of different active thicknesses, respectively suitable for use in different types of devices, such as diodes and transistors.

摘要翻译： 在同一硅层上形成不同有源厚度的方法包括掩蔽硅层并暴露硅层的选定区域。 通过在曝光区域从层中添加硅或从中减去硅来改变暴露区域处的硅层的厚度。 一旦去除掩模，硅层就具有不同有源厚度的区域，分别适用于不同类型的器件，例如二极管和晶体管。

公开(公告)号：US20120326279A1

公开(公告)日：2012-12-27

申请号：US13607023

申请日：2012-09-07

申请人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

发明人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

IPC分类号： H01L21/20 ,  H01L29/16

CPC分类号： H01L29/0684 ,  H01L21/84 ,  H01L27/1203

摘要： A semiconductor product has different active thicknesses of silicon on a single semiconductor substrate. The thickness of the silicon layer is changed either by selectively adding silicon or subtracting silicon from an original layer of silicon. The different active thicknesses are suitable for use in different types of devices, such as diodes and transistors.

摘要翻译： 半导体产品在单个半导体衬底上具有不同的有源厚度的硅。 通过选择性地添加硅或从原始硅层减去硅来改变硅层的厚度。 不同的有源厚度适用于不同类型的器件，例如二极管和晶体管。

公开(公告)号：US06955931B1

公开(公告)日：2005-10-18

申请号：US11053863

申请日：2005-02-10

申请人： David E. Brown ,  Sey-Ping Sun

发明人： David E. Brown ,  Sey-Ping Sun

IPC分类号： H01L21/336 ,  H01L21/66

CPC分类号： H01L29/7842 ,  H01L22/24 ,  H01L29/665 ,  H01L29/6653

摘要： A method of detecting silicide encroachment to the sidewalls of a gate electrode includes forming silicide at a device, with sidewall spacers defining a desired separation of the silicide from the sidewalls of the gate electrode. After silicide formation, the sidewall spacers are removed and line-of-sight monitoring is performed of the region previously obscured by the sidewall spacers, thereby permitting detection of silicide encroachment.

摘要翻译： 检测硅化物侵入到栅电极的侧壁的方法包括在器件处形成硅化物，其中侧壁间隔物限定硅化物与栅电极的侧壁的期望间隔。 在硅化物形成之后，去除侧壁间隔物，并且对由先前被侧壁间隔物遮蔽的区域进行视线监测，从而允许检测硅化物侵入。

公开(公告)号：US08003459B2

公开(公告)日：2011-08-23

申请号：US12691477

申请日：2010-01-21

申请人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

发明人： David E. Brown ,  Hans Van Meer ,  Sey-Ping Sun

IPC分类号： H01L21/8238

CPC分类号： H01L29/0684 ,  H01L21/84 ,  H01L27/1203

摘要： A method for forming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon layer at the exposed regions is changed, either by adding silicon or subtracting silicon from the layer at the exposed regions. Once the mask is removed, the silicon layer has regions of different active thicknesses, respectively suitable for use in different types of devices, such as diodes and transistors.

摘要翻译： 在同一硅层上形成不同有源厚度的方法包括掩蔽硅层并暴露硅层的选定区域。 通过在曝光区域从层中添加硅或从中减去硅来改变暴露区域处的硅层的厚度。 一旦去除掩模，硅层就具有不同有源厚度的区域，分别适用于不同类型的器件，例如二极管和晶体管。

公开(公告)号：US20130034948A1

公开(公告)日：2013-02-07

申请号：US13204352

申请日：2011-08-05

申请人： Gin-Chen Huang ,  Yi-An Lin ,  Ching-Hong Jiang ,  Neng-Kuo Chen ,  Sey-Ping Sun ,  Clement Hsingjen Wann

发明人： Gin-Chen Huang ,  Yi-An Lin ,  Ching-Hong Jiang ,  Neng-Kuo Chen ,  Sey-Ping Sun ,  Clement Hsingjen Wann

IPC分类号： H01L21/762

CPC分类号： H01L21/76224 ,  H01L21/3081 ,  H01L21/31053 ,  H01L21/31055

摘要： A method for fabricating a semiconductor device is disclosed. An exemplary method includes a providing substrate. A dielectric layer is formed over the semiconductor substrate and a stop layer is formed over the dielectric layer. The stop layer and the dielectric layer comprise a different material. The method further includes forming a patterned hard mask layer over the stop layer and etching the semiconductor substrate through the patterned hard mask layer to form a plurality of trenches. The method also includes depositing an isolation material on the semiconductor substrate and substantially filling the plurality of trenches. Thereafter, performing a CMP process on the semiconductor substrate, wherein the CMP process stops on the stop layer.

摘要翻译： 公开了一种制造半导体器件的方法。 一种示例性方法包括提供衬底。 在半导体衬底上形成电介质层，并在电介质层上形成阻挡层。 阻挡层和电介质层包括不同的材料。 该方法还包括在停止层上形成图案化的硬掩模层，并通过图案化的硬掩模层蚀刻半导体衬底以形成多个沟槽。 该方法还包括在半导体衬底上沉积隔离材料并基本上填充多个沟槽。 此后，在半导体衬底上执行CMP处理，其中CMP处理在停止层上停止。