利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

17 条记录 (耗时 0.025 秒)

    Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same
    4.
    发明授权
    Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same 失效
    硅薄膜，集成太阳能电池，模块及其制造方法

    公开(公告)号：US06211455B1

    公开(公告)日：2001-04-03

    申请号：US09345862

    申请日：1999-07-01

    申请人： David H. Ford ,  Allen M. Barnett ,  Robert B. Hall ,  James A. Rand

    发明人： David H. Ford ,  Allen M. Barnett ,  Robert B. Hall ,  James A. Rand

    IPC分类号： H01L31068

    CPC分类号： H01L31/1872 ,  H01L31/03682 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/0682 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T428/12528 ,  Y10T428/24 ,  Y10T428/24058

    摘要： A polycrystalline film of silicon including silicon grains having an aspect ratio, d/t, of more than 1:1, wherein “d” is the grain diameter and “t” is the grain thickness. The polycrystalline film of silicon can be used to form an electronic device, such as a monolithically integrated solar cell having ohmic contacts formed on opposed surfaces or on the same surface of the film. A plurality of solar cells can be monolithically integrated to provide a solar cell module that includes an electrically insulating substrate and at least two solar cells disposed on the substrate in physical isolation from one another. Methods for manufacturing the film, solar cell and solar cell module are also disclosed. The simplified structure and method allow for substantial cost reduction on a mass-production scale, at least in part due to the high aspect ratio silicon grains in the film.

    摘要翻译： 包含长径比d / t大于1:1的硅晶粒的多晶膜，其中“d”是晶粒直径，“t”是晶粒厚度。 可以使用硅的多晶膜来形成电子器件，例如在相对的表面上或薄膜的相同表面上形成欧姆接触的单片集成的太阳能电池。 可以将多个太阳能电池单体集成以提供太阳能电池模块，该太阳能电池模块包括电绝缘基板和至少两个设置在基板上的彼此物理隔离的太阳能电池。 还公开了制造薄膜，太阳能电池和太阳能电池组件的方法。 简化的结构和方法允许在大规模生产规模上大幅降低成本，至少部分是由于膜中硅晶粒的高纵横比。

    Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same
    8.
    发明授权
    Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same 有权

    公开(公告)号：US06362021B1

    公开(公告)日：2002-03-26

    申请号：US09776514

    申请日：2001-02-02

    申请人： David H. Ford ,  Allen M. Barnett ,  Robert B. Hall ,  James A. Rand

    发明人： David H. Ford ,  Allen M. Barnett ,  Robert B. Hall ,  James A. Rand

    IPC分类号： H01L31068

    摘要： A polycrystalline film of silicon including silicon grains having an aspect ratio, d/t, of more than 1:1, wherein “d” is the grain diameter and “t” is the grain thickness. The polycrystalline film of silicon can be used to form an electronic device, such as a monolithically integrated solar cell having ohmic contacts formed on opposed surfaces or on the same surface of the film. A plurality of solar cells can be monolithically integrated to provide a solar cell module that includes an electrically insulating substrate and at least two solar cells disposed on the substrate in physical isolation from one another. Methods for manufacturing the film, solar cell and solar cell module are also disclosed. The simplified structure and method allow for substantial cost reduction on a mass-production scale, at least in part due to the high aspect ratio silicon grains in the film.

    PHOTOVOLTAIC SOLAR CELL AND METHOD OF MAKING THE SAME
    10.
    发明申请
    PHOTOVOLTAIC SOLAR CELL AND METHOD OF MAKING THE SAME 审中-公开
    光伏太阳能电池及其制造方法

    公开(公告)号：US20100059107A1

    公开(公告)日：2010-03-11

    申请号：US12066960

    申请日：2006-07-31

    申请人： Allen M. Barnett ,  Jerome S. Culik ,  David H. Ford

    发明人： Allen M. Barnett ,  Jerome S. Culik ,  David H. Ford

    IPC分类号： H01L31/00 ,  H01L21/027 ,  H01L31/18

    CPC分类号： H01L31/1876 ,  H01L31/0236 ,  H01L31/0547 ,  H01L31/056 ,  H01L31/06 ,  H01L31/072 ,  Y02E10/52 ,  Y02P70/521

    摘要： A front-surface-illuminated photovoltaic device, having a first semiconductor layer (180) with a back surface, a second semiconductor layer (130) with a front surface, the second layer (130) having the opposite doping type to the first layer (180) and deposited on the first layer (180); and at least one ohmic contact (160, 230) to each of the first (180) and second (130) semiconductor layers; and a process for making the photovoltaic device. The device may also have a barrier layer (190) for reducing diffusion of impurities from the first semiconductor layer (180) into the second semiconductor layer (130), a blocking layer (120), and a reflector layer (200). The device may have an array of first regions (115) in which the second layer (130) is of opposite doping type to that of the first layer (180) and forms p-n junctions (240) in these first regions (115), and second regions (300), each second region (300) containing the barrier layer (190) and the reflector layer (200). The first (130) and second (300) regions are laterally intermixed, have a lateral shape of either bounded regions or stripes, or a combination of bounded regions and stripes.

    摘要翻译： 一种前表面照明的光电器件，具有带有后表面的第一半导体层（180），具有前表面的第二半导体层（130），所述第二层（130）具有与第一层相反的掺杂类型（130） 180）并沉积在第一层（180）上; 以及至少一个欧姆接触（160,230）到所述第一（180）和第二（130）半导体层中的每一个; 以及制造光伏器件的方法。 该装置还可以具有用于减少杂质从第一半导体层（180）扩散到第二半导体层（130），阻挡层（120）和反射器层（200）中的阻挡层（190）。 器件可以具有第一区域（115）的阵列，其中第二层（130）与第一层（180）的掺杂类型相反，并且在这些第一区域（115）中形成pn结（240），并且 第二区域（300），每个第二区域（300）包含阻挡层（190）和反射器层（200）。 第一（130）和第二（300）区域是横向混合的，具有有界区域或条纹的横向形状，或有界区域和条纹的组合。