PHOTOVOLTAIC MODULES MANUFACTURED USING MONOLITHIC MODULE ASSEMBLY TECHNIQUES
    1.
    发明申请
    PHOTOVOLTAIC MODULES MANUFACTURED USING MONOLITHIC MODULE ASSEMBLY TECHNIQUES 审中-公开
    使用单片模块组装技术制造的光伏模块

    公开(公告)号:US20110067751A1

    公开(公告)日:2011-03-24

    申请号:US12905921

    申请日:2010-10-15

    IPC分类号: H01L31/048

    摘要: Photovoltaic modules comprising back-contact solar cells manufactured using monolithic module assembly techniques comprising a flexible circuit comprising a back sheet and a patterned metallization. The module may comprise busses in electrical contact with the patterned metallization to extract the current. The module may alternatively comprise multilevel metallizations. Interlayer dielectric comprising islands or dots relieves stresses due to thermal mismatch. The use of multiple cord plates enables flexible circuit layouts, thus optimizing the module. The modules preferably comprise a thermoplastic encapsulant and/or hybrid adhesive/solder materials. An ultrathin moisture barrier enables roll-to-roll processing.

    摘要翻译: 包括使用整体模块组装技术制造的背接触式太阳能电池的光伏模块,该技术包括包含背板和图案化金属化的柔性电路。 模块可以包括与图案化的金属化物电接触以提取电流的母线。 该模块可以替代地包括多层金属化。 包含岛或点的层间电介质减轻了由于热失配引起的应力。 使用多个电缆板可实现灵活的电路布局,从而优化模块。 模块优选地包括热塑性密封剂和/或混合粘合剂/焊料材料。 超薄防潮屏障可实现卷对卷加工。

    PHOTOVOLTAIC MODULES MANUFACTUERD USING MONOLITHIC MODULE ASSEMBLY TECHNIQUES
    2.
    发明申请
    PHOTOVOLTAIC MODULES MANUFACTUERD USING MONOLITHIC MODULE ASSEMBLY TECHNIQUES 审中-公开
    使用单片模块组装技术的光伏模块制造

    公开(公告)号:US20120167986A1

    公开(公告)日:2012-07-05

    申请号:US13419250

    申请日:2012-03-13

    IPC分类号: H01L31/05

    摘要: Photovoltaic modules comprising back-contact solar cells manufactured using monolithic module assembly techniques comprising a flexible circuit comprising a back sheet and a patterned metallization. The module may comprise busses in electrical contact with the patterned metallization to extract the current. The module may alternatively comprise multilevel metallizations. Interlayer dielectric comprising islands or dots relieves stresses due to thermal mismatch. The use of multiple cord plates enables flexible circuit layouts, thus optimizing the module. The modules preferably comprise a thermoplastic encapsulant and/or hybrid adhesive/solder materials. An ultrathin moisture barrier enables roll-to-roll processing.

    摘要翻译: 包括使用整体模块组装技术制造的背接触式太阳能电池的光伏模块,该技术包括包含背板和图案化金属化的柔性电路。 模块可以包括与图案化的金属化物电接触以提取电流的母线。 该模块可以替代地包括多层金属化。 包含岛或点的层间电介质减轻了由于热失配引起的应力。 使用多个电缆板可实现灵活的电路布局,从而优化模块。 模块优选地包括热塑性密封剂和/或混合粘合剂/焊料材料。 超薄防潮屏障可实现卷对卷加工。

    Photovoltaic Modules Manufactured Using Monolithic Module Assembly Techniques
    3.
    发明申请
    Photovoltaic Modules Manufactured Using Monolithic Module Assembly Techniques 审中-公开
    使用整体模块装配技术制造的光伏组件

    公开(公告)号:US20100012172A1

    公开(公告)日:2010-01-21

    申请号:US12432706

    申请日:2009-04-29

    IPC分类号: H01L31/048 H01L31/042

    摘要: Photovoltaic modules comprising back-contact solar cells manufactured using monolithic module assembly techniques comprising a flexible circuit comprising a back sheet and a patterned metallization. The module may comprise busses in electrical contact with the patterned metallization to extract the current. The module may alternatively comprise multilevel metallizations. Interlayer dielectric comprising islands or dots relieves stresses due to thermal mismatch. The use of multiple cord plates enables flexible circuit layouts, thus optimizing the module. The modules preferably comprise a thermoplastic encapsulant and/or hybrid adhesive/solder materials. An ultrathin moisture barrier enables roll-to-roll processing.

    摘要翻译: 包括使用整体模块组装技术制造的背接触式太阳能电池的光伏模块,该技术包括包含背板和图案化金属化的柔性电路。 模块可以包括与图案化的金属化物电接触以提取电流的母线。 该模块可以替代地包括多层金属化。 包含岛或点的层间电介质减轻了由于热失配引起的应力。 使用多个电缆板可实现灵活的电路布局,从而优化模块。 模块优选地包括热塑性密封剂和/或混合粘合剂/焊料材料。 超薄防潮屏障可实现卷对卷加工。

    Interconnect Technologies for Back Contact Solar Cells and Modules
    4.
    发明申请
    Interconnect Technologies for Back Contact Solar Cells and Modules 审中-公开
    用于背面接触太阳能电池和模块的互连技术

    公开(公告)号:US20080216887A1

    公开(公告)日:2008-09-11

    申请号:US11963841

    申请日:2007-12-23

    IPC分类号: H01L31/05 H01L31/18

    摘要: Methods and systems for interconnecting back contact solar cells. The solar cells preferably have reduced area busbars, or are entirely busbarless, and current is extracted from a variety of points on the interior of the cell surface. The interconnects preferably relieve stresses due to solder reflow and other thermal effects. The interconnects may be stamped and include external or internal structures which are bonded to the solder pads on the solar cell. These structures are designed to minimize thermal stresses between the interconnect and the solar cell. The interconnect may alternatively comprise porous metals such as wire mesh, wire cloth, or expanded metal, or corrugated or fingered strips. The interconnects are preferably electrically isolated from the solar cell by an insulator which is deposited on the cell, placed on the cell as a discrete layer, or laminated directly to desired areas of the interconnect.

    摘要翻译: 用于互连背接触太阳能电池的方法和系统。 太阳能电池优选地具有减小的面积母线,或者完全无母线,并且电流从电池表面内部的各种点提取。 互连优选地减轻由于焊料回流和其它热效应引起的应力。 互连可以被冲压并且包括结合到太阳能电池上的焊盘的外部或内部结构。 这些结构被设计成使互连和太阳能电池之间的热应力最小化。 互连可以可选地包括多孔金属,例如金属丝网,金属丝布或多孔金属,或波纹状或指形条。 互连优选地通过绝缘体与太阳能电池电隔离,所述绝缘体沉积在电池上,作为离散层放置在电池上,或者直接层压到互连的期望区域。

    INTERCONNECT TECHNOLOGIES FOR BACK CONTACT SOLAR CELLS AND MODULES
    5.
    发明申请
    INTERCONNECT TECHNOLOGIES FOR BACK CONTACT SOLAR CELLS AND MODULES 审中-公开
    用于背面接触太阳能电池和模块的互连技术

    公开(公告)号:US20120204938A1

    公开(公告)日:2012-08-16

    申请号:US13419264

    申请日:2012-03-13

    摘要: Methods and systems for interconnecting back contact solar cells. The solar cells preferably have reduced area busbars, or are entirely busbarless, and current is extracted from a variety of points on the interior of the cell surface. The interconnects preferably relieve stresses due to solder reflow and other thermal effects. The interconnects may be stamped and include external or internal structures which are bonded to the solder pads on the solar cell. These structures are designed to minimize thermal stresses between the interconnect and the solar cell. The interconnect may alternatively comprise porous metals such as wire mesh, wire cloth, or expanded metal, or corrugated or fingered strips. The interconnects are preferably electrically isolated from the solar cell by an insulator which is deposited on the cell, placed on the cell as a discrete layer, or laminated directly to desired areas of the interconnect.

    摘要翻译: 用于互连背接触太阳能电池的方法和系统。 太阳能电池优选地具有减小的面积母线,或者完全是无母线的,并且电流从电池表面内部的各种点提取。 互连优选地减轻由于焊料回流和其它热效应引起的应力。 互连可以被冲压并且包括结合到太阳能电池上的焊盘的外部或内部结构。 这些结构被设计成使互连和太阳能电池之间的热应力最小化。 互连可以可选地包括多孔金属,例如金属丝网,金属丝布或多孔金属,或波纹状或指形条。 互连优选地通过绝缘体与太阳能电池电隔离,所述绝缘体沉积在电池上,作为离散层放置在电池上,或者直接层压到互连的期望区域。

    INTERCONNECT TECHNOLOGIES FOR BACK CONTACT SOLAR CELLS AND MODULES
    6.
    发明申请
    INTERCONNECT TECHNOLOGIES FOR BACK CONTACT SOLAR CELLS AND MODULES 审中-公开
    用于背面接触太阳能电池和模块的互连技术

    公开(公告)号:US20110126878A1

    公开(公告)日:2011-06-02

    申请号:US12952018

    申请日:2010-11-22

    IPC分类号: H01L31/05

    摘要: Methods and systems for interconnecting back contact solar cells. The solar cells preferably have reduced area busbars, or are entirely busbarless, and current is extracted from a variety of points on the interior of the cell surface. The interconnects preferably relieve stresses due to solder reflow and other thermal effects. The interconnects may be stamped and include external or internal structures which are bonded to the solder pads on the solar cell. These structures are designed to minimize thermal stresses between the interconnect and the solar cell. The interconnect may alternatively comprise porous metals such as wire mesh, wire cloth, or expanded metal, or corrugated or fingered strips. The interconnects are preferably electrically isolated from the solar cell by an insulator which is deposited on the cell, placed on the cell as a discrete layer, or laminated directly to desired areas of the interconnect.

    摘要翻译: 用于互连背接触太阳能电池的方法和系统。 太阳能电池优选地具有减小的面积母线,或者完全无母线,并且电流从电池表面内部的各种点提取。 互连优选地减轻由于焊料回流和其它热效应引起的应力。 互连可以被冲压并且包括结合到太阳能电池上的焊盘的外部或内部结构。 这些结构被设计成使互连和太阳能电池之间的热应力最小化。 互连可以可选地包括多孔金属,例如金属丝网,金属丝布或多孔金属,或波纹状或指形条。 互连优选地通过绝缘体与太阳能电池电隔离,所述绝缘体沉积在电池上,作为离散层放置在电池上,或者直接层压到互连的期望区域。

    Interconnect Technologies for Back Contact Solar Cells and Modules
    7.
    发明申请
    Interconnect Technologies for Back Contact Solar Cells and Modules 审中-公开
    用于背面接触太阳能电池和模块的互连技术

    公开(公告)号:US20100024881A1

    公开(公告)日:2010-02-04

    申请号:US12563040

    申请日:2009-09-18

    IPC分类号: H01L31/00

    摘要: Methods and systems for interconnecting back contact solar cells. The solar cells preferably have reduced area busbars, or are entirely busbarless, and current is extracted from a variety of points on the interior of the cell surface. The interconnects preferably relieve stresses due to solder reflow and other thermal effects. The interconnects may be stamped and include external or internal structures which are bonded to the solder pads on the solar cell. These structures are designed to minimize thermal stresses between the interconnect and the solar cell. The interconnect may alternatively comprise porous metals such as wire mesh, wire cloth, or expanded metal, or corrugated or fingered strips. The interconnects are preferably electrically isolated from the solar cell by an insulator which is deposited on the cell, placed on the cell as a discrete layer, or laminated directly to desired areas of the interconnect.

    摘要翻译: 用于互连背接触太阳能电池的方法和系统。 太阳能电池优选地具有减小的面积母线,或者完全是无母线的,并且电流从电池表面内部的各种点提取。 互连优选地减轻由于焊料回流和其它热效应引起的应力。 互连可以被冲压并且包括结合到太阳能电池上的焊盘的外部或内部结构。 这些结构被设计成使互连和太阳能电池之间的热应力最小化。 互连可以可选地包括多孔金属,例如金属丝网,金属丝布或多孔金属,或波纹状或指形条。 互连优选地通过绝缘体与太阳能电池电隔离,所述绝缘体沉积在电池上,作为离散层放置在电池上,或者直接层压到互连的期望区域。

    Semiconductor layer structure comprising a cavity layer and method for fabricating the semiconductor layer structure
    8.
    发明授权
    Semiconductor layer structure comprising a cavity layer and method for fabricating the semiconductor layer structure 有权
    包括空腔层的半导体层结构和用于制造半导体层结构的方法

    公开(公告)号:US08829532B2

    公开(公告)日:2014-09-09

    申请号:US11702011

    申请日:2007-02-02

    摘要: Semiconductor layer structure and a method for producing a structure are provided, including a substrate made of semiconductor material, on which a layer made of a second semiconductor material is situated, furthermore a region (3) enriched with impurity atoms, which region is situated either in layer (2) or at a specific depth below the interface between layer (2) and substrate (1), additionally a layer (4) within the region (3) enriched with impurity atoms, which layer comprises cavities produced by ion implantation, furthermore at least one epitaxial layer (6) applied to layer (2) and also a defect region (5) comprising dislocations and stacking faults within the layer (4) comprising cavities, the at least one epitaxial layer (6) being largely crack-free, and a residual strain of the at least one epitaxial layer (6) being less than or equal to 1 GPa.

    摘要翻译: 提供半导体层结构和制造结构的方法,包括由半导体材料制成的基板,在其上设置由第二半导体材料制成的层,此外还包括富含杂质原子的区域(3),该区域位于 在层(2)中或在层(2)和衬底(1)之间的界面下方的特定深度处,另外在区域(3)内富含杂质原子的层(4),该层包括通过离子注入产生的空穴, 此外,施加到层(2)的至少一个外延层(6)还包括在包括空腔的层(4)内的位错和层叠缺陷的缺陷区域(5),所述至少一个外延层(6) 所述至少一个外延层(6)的残余应变小于或等于1GPa。

    Method for the production of a semiconductor structure
    10.
    发明授权
    Method for the production of a semiconductor structure 有权
    制造半导体结构的方法

    公开(公告)号:US08492243B2

    公开(公告)日:2013-07-23

    申请号:US12863506

    申请日:2009-01-21

    IPC分类号: H01L21/30

    摘要: Semiconductor structures are produced by providing a 3C—SiC semiconductor layer containing a monocrystalline 3C—SiC layer by implantation of carbon in silicon on a first silicon substrate and applying an epitaxial layer of nitride compound semiconductor suitable for the generation of optoelectronic components onto the 3C—SiC semiconductor layer structure, wherein the epitaxial layer of nitride semiconductor is transferred onto a second substrate by bonding the nitride layer onto the second substrate surface and mechanically or chemically removing silicon and layers containing SiC, the second substrate being a metal with a reflectivity ≧80% or being substantially transparent.

    摘要翻译: 通过在第一硅衬底上通过在硅中注入碳来提供包含单晶3C-SiC层的3C-SiC半导体层来制造半导体结构,并将适于产生光电子部件的氮化物半导体外延层施加到3C- SiC半导体层结构,其中氮化物半导体的外延层通过将氮化物层粘合到第二衬底表面上并机械地或化学地去除硅和含有SiC的层而转移到第二衬底上,第二衬底是具有反射率> 80%或基本透明。