摘要:
An optical metrology includes a library, a metrology tool and a library evolution tool. The library is generated to include a series of predicted measurements. Each predicted measurement is intended to match the measurements that a metrology device would record when analyzing a corresponding physical structure. The metrology tool compares its empirical measurements to the predicted measurements in the library. If a match is found, the metrology tool extracts a description of the corresponding physical structure from the library. The library evolution tool operates to improve the efficiency of the library. To make these improvements, the library evolution tool statistically analyzes the usage pattern of the library. Based on this analysis, the library evolution tool increases the resolution of commonly used portions of the library. The library evolution tool may also optionally reduce the resolution of less used portions of the library.
摘要:
An optical metrology includes a library, a metrology tool and a library evolution tool. The library is generated to include a series of predicted measurements. Each predicted measurement is intended to match the measurements that a metrology device would record when analyzing a corresponding physical structure. The metrology tool compares its empirical measurements to the predicted measurements in the library. If a match is found, the metrology tool extracts a description of the corresponding physical structure from the library. The library evolution tool operates to improve the efficiency of the library. To make these improvements, the library evolution tool statistically analyzes the usage pattern of the library. Based on this analysis, the library evolution tool increases the resolution of commonly used portions of the library. The library evolution tool may also optionally reduce the resolution of less used portions of the library.
摘要:
A combination metrology tool is disclosed for analyzing samples, and in particular semiconductor samples. The device includes a first measurement module for determining electrical characteristics of the sample. In general, such a measurement module will monitor voltage or capacitance characteristics to derive information such as carrier lifetimes, diffusion lengths and surface doping. The device also includes a second measurement module for determining compositional characteristics such as layer thickness, index of refraction and extinction coefficient. The second measurement module will include a light source for generating a probe beam which interacts with the sample. A detection system is provided for monitoring either the change in magnitude or polarization state of the probe beam. The output signals from both measurement modules are combined by a processor to more accurately evaluate the sample.
摘要:
A combination metrology tool is disclosed for analyzing samples, and in particular semiconductor samples. The device includes a first measurement module for determining electrical characteristics of the sample. In general, such a measurement module will monitor electrical characteristics to derive information such as carrier lifetimes, diffusion lengths and surface doping. The device also includes a second measurement module for determining compositional characteristics such as layer thickness, index of refraction and extinction coefficient. The second measurement module will include a light source for generating a probe beam which interacts with the sample. A detection system is provided for monitoring either the change in magnitude or polarization state of the probe beam. The output signals from both measurement modules are combined by a processor to more accurately evaluate the sample.
摘要:
An apparatus for scatterometry measurements is disclosed. The apparatus includes a modulated pump source for exciting the sample. A separate probe beam is directed to interact with the sample and the modulated optical response is measured. The measured data is subjected to a scatterometry analysis in order to evaluate geometrical sample features that induce light scattering.
摘要:
An apparatus for scatterometry measurements is disclosed. The apparatus includes a modulated pump source for exciting the sample. A separate probe beam is directed to interact with the sample and the modulated optical response is measured. The measured data is subjected to a scatterometry analysis in order to evaluate geometrical sample features that induce light scattering.
摘要:
An apparatus for scatterometry measurements is disclosed. The apparatus includes a modulated pump source for exciting the sample. A separate probe beam is directed to interact with the sample and the modulated optical response is measured. The measured data is subjected to a scatterometry analysis in order to evaluate geometrical sample features that induce light scattering.
摘要:
The use of scatterometry measurements is proposed for the evaluation of the implantation or annealing of dopants in a semiconductor. In accordance with the subject method, a probe beam of light illuminates the wafer having the dopants implanted therein. The light reflected from the sample is measured and subjected to a scatterometry analysis. The information derived is correlated to the implant region so that parameters of the implant, such as depth of a junction and lateral spreading of the implant or the dose of implanted ions can be evaluated.