Fabricating magnetic read heads with a reduced scratch exposure region
    1.
    发明授权
    Fabricating magnetic read heads with a reduced scratch exposure region 有权
    制造具有减少的划痕曝光区域的磁读头

    公开(公告)号:US07882618B2

    公开(公告)日:2011-02-08

    申请号:US11957468

    申请日:2007-12-16

    IPC分类号: G11B5/127 H04R31/00

    摘要: Methods of fabricating magnetic read heads are provided which reduce the width of the scratch exposure region of a read head. During normal fabrication processes, a read head is formed with a first shield, a read element formed on the first shield, and hard bias layers formed on either side of the read element. The width of the read elements and the hard bias layers define an initial scratch exposure region. According to embodiments herein, a mask structure is formed to protect the read element and first portions of the hard bias layers proximate to the read element. A removal process is then performed to remove second portions of the hard bias layers that are not protected by the mask structure, which defines a final scratch exposure region that is smaller than the initial scratch exposure region.

    摘要翻译: 提供制造磁读头的方法,其减小读头的划痕曝光区域的宽度。 在通常的制造过程中,读头形成有第一屏蔽,形成在第一屏蔽上的读取元件以及形成在读取元件两侧的硬偏置层。 读取元件和硬偏置层的宽度限定初始划痕曝光区域。 根据本文的实施例,形成掩模结构以保护读取元件和靠近读取元件的硬偏置层的第一部分。 然后执行去除处理以去除未被掩模结构保护的硬偏置层的第二部分,其限定小于初始划痕暴露区域的最终刮擦暴露区域。

    FABRICATING MAGNETIC READ HEADS WITH A REDUCED SCRATCH EXPOSURE REGION
    2.
    发明申请
    FABRICATING MAGNETIC READ HEADS WITH A REDUCED SCRATCH EXPOSURE REGION 有权
    用减少的刮刀暴露区域制造磁性读取头

    公开(公告)号:US20090151151A1

    公开(公告)日:2009-06-18

    申请号:US11957468

    申请日:2007-12-16

    IPC分类号: G11B5/33 G11B5/127

    摘要: Methods of fabricating magnetic read heads are provided which reduce the width of the scratch exposure region of a read head. During normal fabrication processes, a read head is formed with a first shield, a read element formed on the first shield, and hard bias layers formed on either side of the read element. The width of the read elements and the hard bias layers define an initial scratch exposure region. According to embodiments herein, a mask structure is formed to protect the read element and first portions of the hard bias layers proximate to the read element. A removal process is then performed to remove second portions of the hard bias layers that are not protected by the mask structure, which defines a final scratch exposure region that is smaller than the initial scratch exposure region.

    摘要翻译: 提供制造磁读头的方法,其减小读头的划痕曝光区域的宽度。 在通常的制造过程中,读头形成有第一屏蔽,形成在第一屏蔽上的读取元件以及形成在读取元件两侧的硬偏置层。 读取元件和硬偏置层的宽度限定初始划痕曝光区域。 根据本文的实施例,形成掩模结构以保护读取元件和靠近读取元件的硬偏置层的第一部分。 然后执行去除处理以去除未被掩模结构保护的硬偏置层的第二部分,其限定小于初始划痕暴露区域的最终刮擦暴露区域。

    Inductive transducer with reduced pole tip protrusion
    3.
    发明授权
    Inductive transducer with reduced pole tip protrusion 失效
    具有减小极尖突起的感应传感器

    公开(公告)号:US06751055B1

    公开(公告)日:2004-06-15

    申请号:US10042674

    申请日:2002-01-08

    IPC分类号: G11B531

    摘要: An inductive transducer has inorganic nonferromagnetic material disposed in an apex region adjacent to a submicron nonferromagnetic gap in a magnetic core. The inorganic nonferromagnetic material has a much lower coefficient of thermal expansion than that of hardbaked photoresist, reducing pole tip protrusion even if other insulation surrounding the coil sections within the core is made of hardbaked photoresist. Alternatively, the entire insulation surrounding the coil sections within the core, in addition to the apex region, can be formed of inorganic nonferromagnetic material, further reducing pole tip protrusion. The transducer has SiO2 rather than alumina in an undercoat layer joining the wafer substrate and the thin film layers of the transducer. SiO2 may also replace alumina in other areas, such as a piggyback layer joining the inductive transducer with a magnetoresistive transducer.

    摘要翻译: 感应换能器具有无机非铁磁材料,其设置在与磁芯中的亚微米非铁磁间隙相邻的顶点区域中。 无机非铁磁材料的热膨胀系数比硬化的光致抗蚀剂要低得多,即使在芯体内的线圈部分周围的其它绝缘体也是由硬质的光致抗蚀剂制成的,也可以减小极尖突起。 或者,除了顶点区域之外围绕线圈部分的整个绝缘体可以由无机非铁磁材料形成,进一步减小极尖突起。 传感器在连接晶片衬底和换能器的薄膜层的底涂层中具有SiO 2而不是氧化铝。 SiO 2还可以在其它区域中替代氧化铝,例如将感应换能器与磁阻换能器接合的搭载背衬层。

    Lapping process for a single element magnetoresistive head
    4.
    发明授权
    Lapping process for a single element magnetoresistive head 失效
    单个元件磁阻头的研磨工艺

    公开(公告)号:US5588199A

    公开(公告)日:1996-12-31

    申请号:US339523

    申请日:1994-11-14

    IPC分类号: G11B5/31 G11B5/39 G11B5/42

    摘要: A method of lapping magnetoresistive (MR) heads individually which provides an MR element having a desired height with minimized skew is described. During fabrication of the MR head, one or more shunt resistors are formed between the edge of the MR element and the head air bearing surface. The shunt resistors are electrically connected at each end to extensions of the MR electrical leads and connected to the MR element and to each other at points between the ends forming a resistor network. During lapping of the MR head, the resistance of the resistor network is measured by an Ohmmeter connected between the MR element leads. As portions of the shunt resistors are ground away, the changes in the measured resistance of the resistor network are used to monitor and control any skew in the lapping process.

    摘要翻译: 描述了单独研磨磁阻(MR)头的方法,其提供具有最小偏移的期望高度的MR元件。 在制造MR磁头时,在MR元件的边缘和头部空气轴承表面之间形成一个或多个分流电阻。 分流电阻器的每一端电连接到MR电引线的延伸部分并连接到MR元件,并且在形成电阻器网络的端部之间的点彼此连接。 在研磨MR头期间,电阻网络的电阻由连接在MR元件引线之间的欧姆表测量。 由于分流电阻器的部分被接地,电阻网络的测量电阻的变化用于监测和控制研磨过程中的任何偏斜。

    Verification of a fabrication process used to form read elements in magnetic heads
    7.
    发明授权
    Verification of a fabrication process used to form read elements in magnetic heads 有权
    用于在磁头中形成读取元件的制造工艺的验证

    公开(公告)号:US07919967B2

    公开(公告)日:2011-04-05

    申请号:US11965502

    申请日:2007-12-27

    IPC分类号: G01R31/08 G01R27/08

    摘要: Test methods and components are disclosed for testing the quality of a fabrication process used to form read elements in magnetic heads. A wafer is populated with one or more test components along with magnetic heads. The test components are formed by the same or similar fabrication processes as the read elements, but do not include a conductive MR sensor between the test leads. By measuring the resistance of the test components, the formation of parasitic shunts can be identified in the test components, which may indicate the formation of parasitic shunts in the read elements. Thus, the quality of the fabrication process in forming read elements in magnetic head may be determined.

    摘要翻译: 公开了用于测试用于在磁头中形成读取元件的制造工艺的质量的测试方法和部件。 晶片与磁头一起安装有一个或多个测试部件。 测试部件通过与读取元件相同或相似的制造工艺形成,但不包括测试引线之间的导电MR传感器。 通过测量测试部件的电阻,可以在测试部件中识别寄生分流器的形成,这可以指示在读取元件中形成寄生分流。 因此,可以确定在磁头中形成读取元件的制造工艺的质量。

    Test components fabricated with large area sensors used for determining the resistance of an MR sensor
    8.
    发明授权
    Test components fabricated with large area sensors used for determining the resistance of an MR sensor 有权
    用大面积传感器制造的测试部件用于确定MR传感器的电阻

    公开(公告)号:US07855553B2

    公开(公告)日:2010-12-21

    申请号:US11965587

    申请日:2007-12-27

    IPC分类号: G01R33/12

    摘要: Test methods and components are disclosed for testing resistances of magnetoresistance (MR) sensors in read elements. Test components are fabricated on a wafer with a first test lead, a test MR sensor, and a second test lead. The test leads and test MR sensor are fabricated with similar processes as first shields, MR sensors, and second shields of read elements on tie wafer. However, the test MR sensor is fabricated with an area that is larger than areas of the MR sensors in the read elements. The larger area of the test MR sensor causes the resistance of the test MR sensor to be insignificant compared to the lead resistance. Thus, a resistance measurement of the test component represents the lead resistance of a read element. An accurate resistance measurement of an MR sensor in a read element may then be determined by subtracting the lead resistance.

    摘要翻译: 公开了用于测试读取元件中的磁阻(MR)传感器的电阻的测试方法和组件。 在具有第一测试导线,测试MR传感器和第二测试导线的晶片上制造测试部件。 测试引线和测试MR传感器采用与晶片上的读取元件的第一屏蔽,MR传感器和第二屏蔽类似的工艺制造。 然而,测试MR传感器的制造面积大于读取元件中MR传感器的面积。 测试MR传感器的较大面积导致测试MR传感器的电阻与引线电阻相比不显着。 因此,测试部件的电阻测量表示读取元件的引线电阻。 然后可以通过减去引线电阻来确定读取元件中的MR传感器的精确电阻测量。

    Electrical lapping guides made from tunneling magnetoresistive (TMR) material
    9.
    发明授权
    Electrical lapping guides made from tunneling magnetoresistive (TMR) material 失效
    由隧道磁阻(TMR)材料制成的电气研磨导轨

    公开(公告)号:US07564110B2

    公开(公告)日:2009-07-21

    申请号:US11379321

    申请日:2006-04-19

    IPC分类号: H01L29/82

    摘要: Tunneling magnetoresistive (TMR) electrical lapping guides (ELG) are disclosed for use in wafer fabrication of magnetic sensing devices, such as magnetic recording heads using TMR read elements. A TMR ELG includes a TMR stack comprising a first conductive layer, a barrier layer, and a second conductive layer of TMR material. The TMR ELG also includes a first lead and a second lead that connect to conductive pads used for applying a sense current to the TMR ELG in a current in plane (CIP) fashion. The first lead contacts one side of the TMR stack so that the first lead contacts both the first conductive layer and the second conductive layer of the TMR stack. The second lead contacts the other side of the TMR stack so that the second lead contacts both the first conductive layer and the second conductive layer of the TMR stack.

    摘要翻译: 公开了隧道磁阻(TMR)电研磨引导件(ELG),用于磁感测装置的晶片制造,例如使用TMR读取元件的磁记录头。 TMR ELG包括TMR堆叠,其包括第一导电层,阻挡层和TMR材料的第二导电层。 TMR ELG还包括连接到用于以当前平面(CIP)方式向TMR ELG施加感测电流的导电焊盘的第一引线和第二引线。 第一引线接触TMR堆叠的一侧,使得第一引线接触TMR堆叠的第一导电层和第二导电层。 第二引线接触TMR堆叠的另一侧,使得第二引线接触TMR堆叠的第一导电层和第二导电层。

    VERIFICATION OF A FABRICATION PROCESS USED TO FORM READ ELEMENTS IN MAGNETIC HEADS
    10.
    发明申请
    VERIFICATION OF A FABRICATION PROCESS USED TO FORM READ ELEMENTS IN MAGNETIC HEADS 有权
    用于形成读取磁头元件的制造工艺的验证

    公开(公告)号:US20090168214A1

    公开(公告)日:2009-07-02

    申请号:US11965502

    申请日:2007-12-27

    IPC分类号: G11B27/36

    摘要: Test methods and components are disclosed for testing the quality of a fabrication process used to form read elements in magnetic heads. A wafer is populated with one or more test components along with magnetic heads. The test components are formed by the same or similar fabrication processes as the read elements, but do not include a conductive MR sensor between the test leads. By measuring the resistance of the test components, the formation of parasitic shunts can be identified in the test components, which may indicate the formation of parasitic shunts in the read elements. Thus, the quality of the fabrication process in forming read elements in magnetic head may be determined.

    摘要翻译: 公开了用于测试用于在磁头中形成读取元件的制造工艺的质量的测试方法和部件。 晶片与磁头一起安装有一个或多个测试部件。 测试部件通过与读取元件相同或相似的制造工艺形成,但不包括测试引线之间的导电MR传感器。 通过测量测试部件的电阻,可以在测试部件中识别寄生分流器的形成,这可以指示在读取元件中形成寄生分流。 因此,可以确定在磁头中形成读取元件的制造工艺的质量。