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    Mechanically joined sputtering target and adapter therefor
    2.
    发明授权
    Mechanically joined sputtering target and adapter therefor 失效
    机械连接溅射靶和适配器

    公开(公告)号：US5641389A

    公开(公告)日：1997-06-24

    申请号：US636320

    申请日：1996-04-23

    申请人： David P. Strauss ,  Thomas J. Hunt ,  Paul S. Gilman

    发明人： David P. Strauss ,  Thomas J. Hunt ,  Paul S. Gilman

    IPC分类号： C23C14/34 ,  H01J37/34

    CPC分类号： H01J37/3435 ,  C23C14/3407

    摘要： A target assembly in which the sputtering material is not soldered or otherwise metallurgically bonded to a backing plate. Rather, the target, which is homogeneously manufactured of sputtering material, is mechanically coupled (e.g., with bolts) to an adapter, which is itself permanently affixed to the chamber. As a result, the target can be easily uncoupled from the chamber and replaced, without also requiring removal and replacement of a backing plate.

    摘要翻译： 其中溅射材料不被焊接或以其它方式冶金结合到背板的目标组件。 相反，由溅射材料均匀地制造的靶被机械地联接（例如，用螺栓）到适配器，该适配器本身永久地固定在腔室上。 结果，目标可以容易地从腔室脱离并被更换，而不需要拆卸和更换背板。

    Mechanically joined sputtering target and adapter therefor
    3.
    发明授权
    Mechanically joined sputtering target and adapter therefor 失效
    机械连接溅射靶和适配器

    公开(公告)号：US06733641B1

    公开(公告)日：2004-05-11

    申请号：US08881948

    申请日：1997-06-25

    申请人： David P. Strauss ,  Thomas J. Hunt ,  Paul S. Gilman

    发明人： David P. Strauss ,  Thomas J. Hunt ,  Paul S. Gilman

    IPC分类号： C23C1434

    CPC分类号： H01J37/3435 ,  C23C14/3407

    摘要： A target assembly in which the sputtering material is not soldered or otherwise metallurgically bonded to a backing plate. Rather, the target, which is homogeneously manufactured of sputtering material, is mechanically coupled (e.g., with bolts) to an adapter, which is itself permanently affixed to the chamber. As a result, the target can be easily uncoupled from the chamber and replaced, without also requiring removal and replacement of a backing plate.

    摘要翻译： 其中溅射材料不被焊接或以其它方式冶金结合到背板的目标组件。 相反，由溅射材料均匀地制造的靶被机械地联接（例如，用螺栓）到适配器，该适配器本身永久地固定在腔室上。 结果，目标可以容易地从腔室脱离并被更换，而不需要拆卸和更换背板。

    Mechanically joined sputtering target and adapter therefor
    4.
    发明授权
    Mechanically joined sputtering target and adapter therefor 失效
    机械连接溅射靶和适配器

    公开(公告)号：US5529673A

    公开(公告)日：1996-06-25

    申请号：US390662

    申请日：1995-02-17

    申请人： David P. Strauss ,  Thomas J. Hunt ,  Paul S. Gilman

    发明人： David P. Strauss ,  Thomas J. Hunt ,  Paul S. Gilman

    IPC分类号： C23C14/34 ,  H01J37/34

    CPC分类号： H01J37/3435 ,  C23C14/3407

    摘要： A target assembly in which the sputtering material is not soldered or otherwise metallurgically bonded to a backing plate. Rather, the target, which is homogeneously manufactured of sputtering material, is mechanically coupled (e.g., with bolts) to an adapter, which is itself permanently affixed to the chamber. As a result, the target can be easily uncoupled from the chamber and replaced, without also requiring removal and replacement of a backing plate.

    摘要翻译： 其中溅射材料不被焊接或以其它方式冶金结合到背板的目标组件。 相反，由溅射材料均匀地制造的靶被机械地联接（例如，用螺栓）到适配器，该适配器本身永久地固定在腔室上。 结果，目标可以容易地从腔室脱离并被更换，而不需要拆卸和更换背板。

    High-purity aluminum sputter targets and method of manufacture
    6.
    发明授权
    High-purity aluminum sputter targets and method of manufacture 有权
    高纯度铝溅射靶及其制造方法

    公开(公告)号：US07320736B2

    公开(公告)日：2008-01-22

    申请号：US10967133

    申请日：2004-10-19

    申请人： Andrew C. Perry ,  Paul S. Gilman ,  Thomas J. Hunt

    发明人： Andrew C. Perry ,  Paul S. Gilman ,  Thomas J. Hunt

    IPC分类号： C22F1/04

    CPC分类号： C23C14/3414 ,  C22F1/04

    摘要： The high-purity aluminum sputter target is at least 99.999 weight percent aluminum and has a grain structure. The grain structure is at least 99 percent recrystallized and has a grain size of less than 200 μm. The method forms high-purity aluminum sputter targets by first cooling a high-purity target blank to a temperature of less than −50 ° C. and then deforming the cooled high-purity target blank introduces intense strain into the high-purity target. After deforming, recrystallizing the grains at a temperature below 200 ° C. forms a target blank having at least 99 percent recrystallized grains. Finally, finishing at a low temperature sufficient to maintain the fine grain size of the high-purity target blank forms a finished sputter target.

    摘要翻译： 高纯度铝溅射靶至少为99.999重量％的铝，具有晶粒结构。 晶粒结构至少99％重结晶，粒径小于200μm。 该方法通过首先将高纯度目标坯料冷却至低于-50℃的温度，然后使冷却的高纯度靶材坯料变形，将高应变压制成高纯度靶材，形成高纯度铝溅射靶。 变形后，在低于200℃的温度下使晶粒再结晶，形成具有至少99％再结晶晶粒的靶坯。 最后，在足以维持高纯度靶材坯料的细晶粒尺寸的低温下进行精加工，形成成品溅射靶。

    Nickel-titanium sputter target alloy
    7.
    发明授权
    Nickel-titanium sputter target alloy 有权
    镍钛溅射靶合金

    公开(公告)号：US06478895B1

    公开(公告)日：2002-11-12

    申请号：US09841625

    申请日：2001-04-25

    申请人： Holger J. Koenigsmann ,  Paul S. Gilman ,  Thomas J. Hunt

    发明人： Holger J. Koenigsmann ,  Paul S. Gilman ,  Thomas J. Hunt

    IPC分类号： C22C1903

    CPC分类号： C23C14/3414 ,  C22C19/03

    摘要： The sputter target deposits nickel from a binary alloy. The binary alloy contains, by weight percent, 9 to 15 titanium and the balance nickel and incidental impurities. The binary alloy has, by weight percent, 35 to 50 TiNi3 needle-like intermetallic phase and balance &agr;-nickel phase. The TiNi3 needle-like intermetallic phase and &agr;-nickel phase are formed from a eutectic decomposition. The &agr;-nickel phase has a grain size between 50 and 180 &mgr;m. The binary alloy has a Curie temperature of less than or equal to a temperature of 25° C. and exhibits paramagnetic properties at temperatures of 25° C. or lower.

    摘要翻译： 溅射靶从二元合金中沉积镍。 二元合金含有重量百分比为9-15钛，余量为镍和附带杂质。 该二元合金以重量百分比计含有35至50个TiNi 3针状金属间相和平衡α-镍相。 TiNi3针状金属间相和α-Ni相由共晶分解形成。 α-镍相的粒径为50-180μm。 二元合金的居里温度小于或等于25℃，在25℃或更低的温度下具有顺磁性能。

    Method of testing a bond interface
    8.
    发明授权
    Method of testing a bond interface 有权
    测试接口接口的方法

    公开(公告)号：US6092427A

    公开(公告)日：2000-07-25

    申请号：US396276

    申请日：1999-09-15

    申请人： Thomas J. Hunt ,  Paul S. Gilman

    发明人： Thomas J. Hunt ,  Paul S. Gilman

    IPC分类号： G01L1/00 ,  C23C14/34 ,  G01N3/04 ,  G01N3/08 ,  G01N19/04 ,  G01N33/20 ,  G01N3/00

    CPC分类号： G01N19/04 ,  G01N3/08 ,  G01N2203/0423

    摘要： A method of preparing and testing bond interface evaluation samples is provided for evaluating the strength of bonds between two metal components, such as the bond in a sputter target/backing plate assembly. A sample of the bond interface of the composite material is removed, a through hole is formed at one end, and the bond interface is removed in the area of the hole, thereby splitting the hole into two holes. The holes are grasped, such as by tapping the holes and inserting threaded rods therein, and the composite layers are pulled apart by applying oppositely directed forces to the rods. The strength of the bond, and not the component materials, is thereby evaluated.

    摘要翻译： 提供了一种制备和测试接合界面评估样品的方法，用于评估两个金属组分之间的键的强度，例如溅射靶/背板组件中的接合。 除去复合材料的接合界面的样品，在一端形成通孔，并在孔的区域中去除接合界面，从而将孔分成两个孔。 抓住孔，例如通过敲击孔并将螺杆插入其中，并且复合层通过向杆施加相反的力而拉开。 从而评价粘合强度而不是组分材料的强度。

    Cryogenic annealing of sputtering targets
    9.
    发明授权
    Cryogenic annealing of sputtering targets 失效
    溅射靶的低温退火

    公开(公告)号：US6056857A

    公开(公告)日：2000-05-02

    申请号：US910334

    申请日：1997-08-13

    申请人： Thomas J. Hunt ,  Paul S. Gilman ,  James E. Joyce ,  Chi-Fung Lo ,  Darryl Draper

    发明人： Thomas J. Hunt ,  Paul S. Gilman ,  James E. Joyce ,  Chi-Fung Lo ,  Darryl Draper

    IPC分类号： C23C14/34 ,  C23C14/56

    CPC分类号： C23C14/564 ,  C23C14/3414

    摘要： Sputtering targets are cryogenically annealed to provide a uniformly dense molecular structure by placing the target in a temperature-controlled cryogenic chamber and cooling the chamber to a cryogenic temperature at a controlled rate. The target is maintained at a cryogenic temperature to cryogenically anneal the target and the target is subsequently returned to ambient or elevated temperature. Improvements in sputtered particle performance and early life film uniformity are achieved with the cryo-annealed targets.

    摘要翻译： 溅射靶被低温退火以通过将靶放置在温度控制的低温室中并以受控的速率将腔室冷却至低温温度来提供均匀致密的分子结构。 目标物保持在低温温度以对靶进行低温退火，并且靶物随后返回到环境温度或升高的温度。 利用低温退火靶物可实现溅射粒子性能和早期寿命膜均匀性的提高。