利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

36 条记录 (耗时 0.024 秒)

    Method for forming sputter target assemblies
    2.
    发明授权
    Method for forming sputter target assemblies 有权
    用于形成溅射靶组件的方法

    公开(公告)号：US08123107B2

    公开(公告)日：2012-02-28

    申请号：US10852117

    申请日：2004-05-25

    申请人： Holger J. Koenigsmann ,  Andrew C. Perry ,  Thomas J. Hunt ,  Paul S. Gilman

    发明人： Holger J. Koenigsmann ,  Andrew C. Perry ,  Thomas J. Hunt ,  Paul S. Gilman

    IPC分类号： B23K20/00

    CPC分类号： B23K35/02

    摘要： The method forms a sputter target assembly by attaching a sputter target to an insert and applying a bond metal layer between the insert and a backing plate. Then pressing the insert and backing plate together forms a solid state bond with the bond metal layer, attaches the insert to the backing plate and forms at least one cooling channel between the insert and the backing plate.

    摘要翻译： 该方法通过将溅射靶附接到插入件并且在插入件和背板之间施加粘合金属层来形成溅射靶组件。 然后将插入物和背板压在一起形成与粘合金属层的固态结合，将插入件附接到背板上，并在插入件和背板之间形成至少一个冷却通道。

    Recessed sputter target
    3.
    发明授权
    Recessed sputter target 有权

    公开(公告)号：US06599405B2

    公开(公告)日：2003-07-29

    申请号：US09870164

    申请日：2001-05-30

    申请人： Thomas J. Hunt ,  Holger J. Koenigsmann ,  Paul S. Gilman

    发明人： Thomas J. Hunt ,  Holger J. Koenigsmann ,  Paul S. Gilman

    IPC分类号： C23C1432

    CPC分类号： H01J37/3491 ,  C23C14/3407

    摘要： The method manufactures sputter target assemblies. It first includes the step of manufacturing a target insert. The target insert has a yield strength, a diameter, a height, a planar top surface and a conical-shaped rear surface. Then a backing plate is manufactured. The backing plate has a cylindrical recess that corresponds to the diameter of the target insert. The cylindrical recess has a depth less than the height of the target insert and a yield strength less than the yield strength of the target insert. Finally, pressing the target insert into the cylindrical recess of the backing plate bonds the target insert to the backing plate to form a target assembly. The pressed target assembly contains the target insert with the conical-shaped rear surface.

    Nickel-titanium sputter target alloy
    4.
    发明授权
    Nickel-titanium sputter target alloy 有权
    镍钛溅射靶合金

    公开(公告)号：US06478895B1

    公开(公告)日：2002-11-12

    申请号：US09841625

    申请日：2001-04-25

    申请人： Holger J. Koenigsmann ,  Paul S. Gilman ,  Thomas J. Hunt

    发明人： Holger J. Koenigsmann ,  Paul S. Gilman ,  Thomas J. Hunt

    IPC分类号： C22C1903

    CPC分类号： C23C14/3414 ,  C22C19/03

    摘要： The sputter target deposits nickel from a binary alloy. The binary alloy contains, by weight percent, 9 to 15 titanium and the balance nickel and incidental impurities. The binary alloy has, by weight percent, 35 to 50 TiNi3 needle-like intermetallic phase and balance &agr;-nickel phase. The TiNi3 needle-like intermetallic phase and &agr;-nickel phase are formed from a eutectic decomposition. The &agr;-nickel phase has a grain size between 50 and 180 &mgr;m. The binary alloy has a Curie temperature of less than or equal to a temperature of 25° C. and exhibits paramagnetic properties at temperatures of 25° C. or lower.

    摘要翻译： 溅射靶从二元合金中沉积镍。 二元合金含有重量百分比为9-15钛，余量为镍和附带杂质。 该二元合金以重量百分比计含有35至50个TiNi 3针状金属间相和平衡α-镍相。 TiNi3针状金属间相和α-Ni相由共晶分解形成。 α-镍相的粒径为50-180μm。 二元合金的居里温度小于或等于25℃，在25℃或更低的温度下具有顺磁性能。

    Method for forming sputter target assemblies
    8.
    发明授权
    Method for forming sputter target assemblies 失效
    用于形成溅射靶组件的方法

    公开(公告)号：US06708870B2

    公开(公告)日：2004-03-23

    申请号：US10153660

    申请日：2002-05-24

    申请人： Holger J. Koenigsmann ,  Andrew C. Perry ,  Thomas J. Hunt ,  Paul S. Gilman

    发明人： Holger J. Koenigsmann ,  Andrew C. Perry ,  Thomas J. Hunt ,  Paul S. Gilman

    IPC分类号： B23K3102

    CPC分类号： B23K20/023 ,  B23K20/16 ,  B23K2103/10

    摘要： The method forms a sputter target assembly by attaching a sputter target to an insert and applying a bond metal layer between the insert and a backing plate. Then pressing the insert and backing plate together forms a solid state bond with the bond metal layer, attaches the insert to the backing plate and forms at least one cooling channel between the insert and the backing plate. A filler metal secures the outer perimeter of the insert to the backing plate in order to eliminate leakage from the cooling channel during sputtering of the sputter target.

    摘要翻译： 该方法通过将溅射靶附接到插入件并且在插入件和背板之间施加粘合金属层来形成溅射靶组件。 然后将插入物和背板压在一起形成与粘合金属层的固态结合，将插入物附接到背板上，并在插入件和背板之间形成至少一个冷却通道。 填充金属将插入件的外周固定到背板上，以便在溅射靶溅射期间消除冷却通道的泄漏。

    High-purity ferromagnetic sputter targets and method of manufacture
    10.
    发明授权
    High-purity ferromagnetic sputter targets and method of manufacture 有权
    高纯铁磁溅射靶及其制造方法

    公开(公告)号：US07608172B2

    公开(公告)日：2009-10-27

    申请号：US10637531

    申请日：2003-08-11

    申请人： Andrew C. Perry ,  Holger J. Koenigsmann ,  David E. Dombrowski ,  Thomas J. Hunt

    发明人： Andrew C. Perry ,  Holger J. Koenigsmann ,  David E. Dombrowski ,  Thomas J. Hunt

    IPC分类号： C23C14/34

    CPC分类号： C23C14/3414 ,  C22F1/10 ,  H01F41/183

    摘要： The method manufactures high-purity ferromagnetic sputter targets by cryogenic working the sputter target blank at a temperature below at least −50° C. to impart at least about 5 percent strain into the sputter target blank to increase PTF uniformity of the target blank. The sputter target blank is a nonferrous metal selected from the group consisting of cobalt and nickel; and the nonferrous metal has a purity of at least about 99.99 weight percent. Finally, fabricating the sputter target blank forms a sputter target having an improved PTF uniformity arising from the cryogenic working.

    摘要翻译： 该方法通过在低于至少-50℃的温度下对溅射靶坯进行低温加工制造高纯度铁磁溅射靶，以使至少约5％的应变进入溅射靶坯，以增加目标坯料的PTF均匀性。 溅射靶坯是选自钴和镍的有色金属; 并且有色金属具有至少约99.99重量％的纯度。 最后，制造溅射靶坯形成具有由低温加工产生的改进的PTF均匀性的溅射靶。