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    On-chip capacitors with a variable capacitance for a radiofrequency integrated circuit
    4.
    发明授权
    On-chip capacitors with a variable capacitance for a radiofrequency integrated circuit 有权
    具有用于射频集成电路的可变电容的片上电容器

    公开(公告)号：US08237243B2

    公开(公告)日：2012-08-07

    申请号：US12552317

    申请日：2009-09-02

    申请人： Douglas M. Daley ,  Mete Erturk ,  Edward J. Gordon

    发明人： Douglas M. Daley ,  Mete Erturk ,  Edward J. Gordon

    IPC分类号： H01L29/00

    CPC分类号： H01G7/00 ,  G06F17/5054 ,  H01L23/5223 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： On-chip capacitors with a variable capacitance, as well as design structures for a radio frequency integrated circuit, and method of fabricating and method of tuning on-chip capacitors. The on-chip capacitor includes first and second ports powered with opposite polarities, first and second electrodes, and first and second voltage-controlled units. Each of the first and second voltage-controlled units is switched between a first state in which the first and second electrodes are electrically isolated from the first and second ports and a second state. When the first voltage-controlled unit is switched to the second state, the first electrode is electrically connected with the first port. When the second voltage-controlled unit is switched to the second state the second electrode is electrically connected with the second port. The on-chip capacitor has a larger capacitance value when the first and second voltage-controlled units are in the second state.

    摘要翻译： 具有可变电容的片上电容器，以及用于射频集成电路的设计结构，以及制造方法和片上电容器的调谐方法。 片上电容器包括由相反极性供电的第一和第二端口，第一和第二电极以及第一和第二电压控制单元。 第一和第二压控单元中的每一个在第一和第二电极与第一和第二端口电隔离的第一状态和第二状态之间切换。 当第一电压控制单元切换到第二状态时，第一电极与第一端口电连接。 当第二电压控制单元切换到第二状态时，第二电极与第二端口电连接。 当第一和第二电压控制单元处于第二状态时，片上电容器具有较大的电容值。

    BEOL Wiring Structures That Include an On-Chip Inductor and an On-Chip Capacitor, and Design Structures for a Radiofrequency Integrated Circuit
    5.
    发明申请
    BEOL Wiring Structures That Include an On-Chip Inductor and an On-Chip Capacitor, and Design Structures for a Radiofrequency Integrated Circuit 有权
    包括片上电感和片上电容的BEOL接线结构，以及射频集成电路的设计结构

    公开(公告)号：US20090322447A1

    公开(公告)日：2009-12-31

    申请号：US12146555

    申请日：2008-06-26

    申请人： Douglas M. Daley ,  Mete Erturk ,  Edward J. Gordon

    发明人： Douglas M. Daley ,  Mete Erturk ,  Edward J. Gordon

    IPC分类号： H03H7/00 ,  H01L29/00

    CPC分类号： H01L27/0688 ,  H01L23/5223 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/3011 ,  H03H2001/0092 ,  H01L2924/00

    摘要： Back-end-of-line (BEOL) wiring structures that include an on-chip inductor and an on-chip capacitor, as well as design structures for a radiofrequency integrated circuit. The on-chip inductor and an on-chip capacitor, which are fabricated as conductive features in different metallization levels, are vertically aligned with each other. The on-chip capacitor, which is located between the on-chip inductor and the substrate, may serve as a Faraday shield for the on-chip inductor. Optionally, the BEOL wiring structure may include an optional Faraday shield located vertically either between the on-chip capacitor and the on-chip inductor, or between the on-chip capacitor and the top surface of the substrate. The BEOL wiring structure may include at least one floating electrode capable of being selectively coupled with the electrodes of the on-chip capacitor to permit tuning, during circuit operation, of a resonance frequency of an LC resonator that further includes the on-chip inductor.

    摘要翻译： 包括片上电感器和片上电容器的后端行（BEOL）布线结构以及射频集成电路的设计结构。 制造为不同金属化水平的导电特征的片上电感器和片上电容器彼此垂直对准。 位于片上电感器和衬底之间的片上电容器可以用作片上电感器的法拉第屏蔽。 可选地，BEOL布线结构可以包括位于片上电容器和片上电感器之间或片上电容器与衬底顶表面之间的可选法拉第屏蔽。 BEOL布线结构可以包括能够与片上电容器的电极选择性耦合的至少一个浮动电极，以允许在电路操作期间调谐进一步包括片上电感器的LC谐振器的谐振频率。

    BEOL wiring structures that include an on-chip inductor and an on-chip capacitor, and design structures for a radiofrequency integrated circuit
    6.
    发明授权
    BEOL wiring structures that include an on-chip inductor and an on-chip capacitor, and design structures for a radiofrequency integrated circuit 有权
    包括片上电感器和片上电容器的BEOL接线结构以及射频集成电路的设计结构

    公开(公告)号：US08169050B2

    公开(公告)日：2012-05-01

    申请号：US12146555

    申请日：2008-06-26

    申请人： Douglas M. Daley ,  Mete Erturk ,  Edward J. Gordon

    发明人： Douglas M. Daley ,  Mete Erturk ,  Edward J. Gordon

    IPC分类号： H01L29/00 ,  H01L21/44

    CPC分类号： H01L27/0688 ,  H01L23/5223 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/3011 ,  H03H2001/0092 ,  H01L2924/00

    摘要： Back-end-of-line (BEOL) wiring structures that include an on-chip inductor and an on-chip capacitor, as well as design structures for a radiofrequency integrated circuit. The on-chip inductor and an on-chip capacitor, which are fabricated as conductive features in different metallization levels, are vertically aligned with each other. The on-chip capacitor, which is located between the on-chip inductor and the substrate, may serve as a Faraday shield for the on-chip inductor. Optionally, the BEOL wiring structure may include an optional Faraday shield located vertically either between the on-chip capacitor and the on-chip inductor, or between the on-chip capacitor and the top surface of the substrate. The BEOL wiring structure may include at least one floating electrode capable of being selectively coupled with the electrodes of the on-chip capacitor to permit tuning, during circuit operation, of a resonance frequency of an LC resonator that further includes the on-chip inductor.

    摘要翻译： 包括片上电感器和片上电容器的后端行（BEOL）布线结构以及射频集成电路的设计结构。 制造为不同金属化水平的导电特征的片上电感器和片上电容器彼此垂直对准。 位于片上电感器和衬底之间的片上电容器可以用作片上电感器的法拉第屏蔽。 可选地，BEOL布线结构可以包括位于片上电容器和片上电感器之间或片上电容器与衬底顶表面之间的可选法拉第屏蔽。 BEOL布线结构可以包括能够与片上电容器的电极选择性耦合的至少一个浮动电极，以允许在电路操作期间调谐进一步包括片上电感器的LC谐振器的谐振频率。

    Methods of fabricating a BEOL wiring structure containing an on-chip inductor and an on-chip capacitor
    7.
    发明授权
    Methods of fabricating a BEOL wiring structure containing an on-chip inductor and an on-chip capacitor 有权
    制造包含片上电感器和片上电容器的BEOL布线结构的方法

    公开(公告)号：US07811919B2

    公开(公告)日：2010-10-12

    申请号：US12146546

    申请日：2008-06-26

    申请人： Douglas M. Daley ,  Mete Erturk ,  Edward J. Gordon

    发明人： Douglas M. Daley ,  Mete Erturk ,  Edward J. Gordon

    IPC分类号： H01L21/44

    CPC分类号： H01L27/0794 ,  H01F2017/0046 ,  H01F2017/008 ,  H01F2021/125 ,  H01L23/5222 ,  H01L23/5227 ,  H01L28/10 ,  H01L28/20 ,  H01L2924/0002 ,  H01L2924/3011 ,  H03H2001/0014 ,  H03H2001/0092 ,  H01L2924/00

    摘要： Methods for fabricating a back-end-of-line (BEOL) wiring structure that includes an on-chip inductor and an on-chip capacitor, as well as methods for tuning and fabricating a resonator that includes the on-chip inductor and on-chip capacitor. The fabrication methods generally include forming the on-chip capacitor and on-chip inductor in different metallization levels of the BEOL wiring structure and laterally positioned to be substantially vertical alignment. The on-chip capacitor may serve as a Faraday shield for the on-chip inductor. Optionally, a Faraday shield may be fabricated either between the on-chip capacitor and the on-chip inductor, or between the on-chip capacitor and the substrate. The BEOL wiring structure may include at least one floating electrode capable of being selectively coupled with the directly-connected electrodes of the on-chip capacitor for tuning, during circuit operation, a resonance frequency of an LC resonator that further includes the on-chip inductor.

    摘要翻译： 用于制造包括片上电感器和片上电容器的后端行（BEOL）布线结构的方法，以及用于调谐和制造包括片上电感器和在线电感器的谐振器的方法， 片式电容器。 制造方法通常包括在BEOL布线结构的不同金属化水平下形成片上电容器和片上电感器，并且横向定位成基本上垂直对准。 片上电容器可以用作片上电感器的法拉第屏蔽。 可选地，法拉第屏蔽可以制造在片上电容器和片上电感器之间，或在片上电容器和衬底之间。 BEOL布线结构可以包括至少一个浮动电极，其能够与片上电容器的直接连接的电极选择性地耦合，用于在电路操作期间调谐LC谐振器的谐振频率，该谐振频率还包括片上电感器 。

    On-chip capacitors with a variable capacitance for a radiofrequency integrated circuit
    8.
    发明授权
    On-chip capacitors with a variable capacitance for a radiofrequency integrated circuit 有权
    具有用于射频集成电路的可变电容的片上电容器

    公开(公告)号：US08809144B2

    公开(公告)日：2014-08-19

    申请号：US13534355

    申请日：2012-06-27

    申请人： Douglas M. Daley ,  Mete Erturk ,  Edward J. Gordon

    发明人： Douglas M. Daley ,  Mete Erturk ,  Edward J. Gordon

    IPC分类号： H01L21/8234

    CPC分类号： H01G7/00 ,  G06F17/5054 ,  H01L23/5223 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： Methods of fabricating an on-chip capacitor with a variable capacitance, as well as methods of adjusting the capacitance of an on-chip capacitor and design structures for an on-chip capacitor. The method includes forming first and second ports configured to be powered with opposite polarities, first and second electrodes, and first and second voltage-controlled units. The method includes configuring the first voltage-controlled unit to selectively couple the first electrode with the first port, and the second voltage-controlled unit to selectively couple the second electrode with the second port. When the first electrode is coupled by the first voltage-controlled unit with the first port and the second electrode is coupled by the second voltage-controlled unit with the second port, the capacitance of the on-chip capacitor increases.

    摘要翻译： 制造具有可变电容的片上电容器的方法，以及调节片上电容器的电容和片上电容器的设计结构的方法。 该方法包括形成配置为以相反极性供电的第一和第二端口，第一和第二电极以及第一和第二压力控制单元。 该方法包括配置第一电压控制单元以选择性地将第一电极与第一端口耦合，以及第二电压控制单元以选择性地将第二电极与第二端口耦合。 当第一电极通过第一电压控制单元与第一端口耦合，并且第二电极通过第二电压控制单元与第二端口耦合时，片上电容器的电容增加。

    ON-CHIP CAPACITORS WITH A VARIABLE CAPACITANCE FOR A RADIOFREQUENCY INTEGRATED CIRCUIT
    9.
    发明申请
    ON-CHIP CAPACITORS WITH A VARIABLE CAPACITANCE FOR A RADIOFREQUENCY INTEGRATED CIRCUIT 有权
    具有适用于无线电综合电路的可变电容的片上电容器

    公开(公告)号：US20100237468A1

    公开(公告)日：2010-09-23

    申请号：US12552317

    申请日：2009-09-02

    申请人： Douglas M. Daley ,  Mete Erturk ,  Edward J. Gordon

    发明人： Douglas M. Daley ,  Mete Erturk ,  Edward J. Gordon

    IPC分类号： H01L29/93 ,  G06F17/50 ,  H01L21/329

    CPC分类号： H01G7/00 ,  G06F17/5054 ,  H01L23/5223 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： On-chip capacitors with a variable capacitance, as well as design structures for a radio frequency integrated circuit, and method of fabricating and method of tuning on-chip capacitors. The on-chip capacitor includes first and second ports powered with opposite polarities, first and second electrodes, and first and second voltage-controlled units. Each of the first and second voltage-controlled units is switched between a first state in which the first and second electrodes are electrically isolated from the first and second ports and a second state. When the first voltage-controlled unit is switched to the second state, the first electrode is electrically connected with the first port. When the second voltage-controlled unit is switched to the second state the second electrode is electrically connected with the second port. The on-chip capacitor has a larger capacitance value when the first and second voltage-controlled units are in the second state.

    摘要翻译： 具有可变电容的片上电容器，以及用于射频集成电路的设计结构，以及制造方法和片上电容器的调谐方法。 片上电容器包括由相反极性供电的第一和第二端口，第一和第二电极以及第一和第二电压控制单元。 第一和第二压控单元中的每一个在第一和第二电极与第一和第二端口电隔离的第一状态和第二状态之间切换。 当第一电压控制单元切换到第二状态时，第一电极与第一端口电连接。 当第二电压控制单元切换到第二状态时，第二电极与第二端口电连接。 当第一和第二电压控制单元处于第二状态时，片上电容器具有较大的电容值。

    Methods of Fabricating a BEOL Wiring Structure Containing an On-Chip Inductor and an On-Chip Capacitor
    10.
    发明申请
    Methods of Fabricating a BEOL Wiring Structure Containing an On-Chip Inductor and an On-Chip Capacitor 有权
    制造包含片上电感和片上电容器的BEOL接线结构的方法

    公开(公告)号：US20090322446A1

    公开(公告)日：2009-12-31

    申请号：US12146546

    申请日：2008-06-26

    申请人： Douglas M. Daley ,  Mete Erturk ,  Edward J. Gordon

    发明人： Douglas M. Daley ,  Mete Erturk ,  Edward J. Gordon

    IPC分类号： H03H7/00 ,  H01L21/02

    CPC分类号： H01L27/0794 ,  H01F2017/0046 ,  H01F2017/008 ,  H01F2021/125 ,  H01L23/5222 ,  H01L23/5227 ,  H01L28/10 ,  H01L28/20 ,  H01L2924/0002 ,  H01L2924/3011 ,  H03H2001/0014 ,  H03H2001/0092 ,  H01L2924/00

    摘要： Methods for fabricating a back-end-of-line (BEOL) wiring structure that includes an on-chip inductor and an on-chip capacitor, as well as methods for tuning and fabricating a resonator that includes the on-chip inductor and on-chip capacitor. The fabrication methods generally include forming the on-chip capacitor and on-chip inductor in different metallization levels of the BEOL wiring structure and laterally positioned to be substantially vertical alignment. The on-chip capacitor may serve as a Faraday shield for the on-chip inductor. Optionally, a Faraday shield may be fabricated either between the on-chip capacitor and the on-chip inductor, or between the on-chip capacitor and the substrate. The BEOL wiring structure may include at least one floating electrode capable of being selectively coupled with the directly-connected electrodes of the on-chip capacitor for tuning, during circuit operation, a resonance frequency of an LC resonator that further includes the on-chip inductor.

    摘要翻译： 用于制造包括片上电感器和片上电容器的后端行（BEOL）布线结构的方法，以及用于调谐和制造包括片上电感器和在线电感器的谐振器的方法， 片式电容器。 制造方法通常包括在BEOL布线结构的不同金属化水平下形成片上电容器和片上电感器，并且横向定位成基本上垂直对准。 片上电容器可以用作片上电感器的法拉第屏蔽。 可选地，法拉第屏蔽可以制造在片上电容器和片上电感器之间，或在片上电容器和衬底之间。 BEOL布线结构可以包括至少一个浮动电极，其能够与片上电容器的直接连接的电极选择性地耦合，用于在电路操作期间调谐LC谐振器的谐振频率，该谐振频率还包括片上电感器 。