WATER TREATMENT SYSTEM FOR SIMULTANEOUS NITRIFICATION AND DENITRIFICATION
    1.
    发明申请
    WATER TREATMENT SYSTEM FOR SIMULTANEOUS NITRIFICATION AND DENITRIFICATION 审中-公开
    水处理系统,用于同时进行硝化和净化

    公开(公告)号:US20120145611A1

    公开(公告)日:2012-06-14

    申请号:US13315276

    申请日:2011-12-08

    IPC分类号: C02F3/30 C02F101/16

    摘要: Described herein is a water treatment system for simultaneously removing ammonia and nitrates from a liquid. The water treatment system comprises a nitrifying volume for nitrification of a liquid and a denitrifying volume for denitrification of the liquid. One of the nitrifying volume and the denitrifying volume resides substantially within the other of the nitrifying volume and the denitrifying volume, and the nitrifying volume and the denitrifying volume are in fluid communication. In one aspect, the nitrifying volume is a relatively oxygenated region and the denitrifying volume is a relatively oxygen-depleted region. In another aspect, the nitrifying volume is in communication with an oxygen-supplying source for providing oxygen to create the relatively oxygenated region.

    摘要翻译: 本文描述了一种用于从液体中同时除去氨和硝酸盐的水处理系统。 水处理系统包括用于液化硝化的硝化体积和用于液体反硝化的反硝化体积。 硝化体积和脱氮体积中的一个基本上位于硝化体积和反硝化体积的另一个内,并且硝化体积和反硝化体积是流体连通的。 在一个方面,硝化体积是相对氧化的区域,反硝化体积是相对耗氧的区域。 在另一方面,硝化体积与供氧源连通,用于提供氧气以产生相对氧化的区域。

    Baseball bat weight
    4.
    外观设计
    Baseball bat weight 有权
    棒球棒重量

    公开(公告)号:USD733235S1

    公开(公告)日:2015-06-30

    申请号:US29483479

    申请日:2014-02-28

    申请人: Dean Smith

    设计人: Dean Smith

    Water filtration system
    5.
    发明授权
    Water filtration system 有权
    水过滤系统

    公开(公告)号:US07807053B2

    公开(公告)日:2010-10-05

    申请号:US12465751

    申请日:2009-05-14

    申请人: Dean Smith

    发明人: Dean Smith

    IPC分类号: A01K63/04 C02F3/04 C02F1/40

    摘要: A filtration system for an aquarium is provided. The filtration system includes a gate chamber with a gate conduit positioned therein that transports unprocessed water from the aquarium. The gate chamber includes filtering media. The filtration system also includes a siphon chamber that is fluidly coupled to the gate chamber. There is a siphon conduit having a siphon conduit inlet at a first elevation within the siphon chamber, a siphon conduit outlet at a second elevation below the first elevation, and a crest at a third elevation above the first and second elevations. The siphon conduit empties into a catch basin, where the processed water is transported back to the aquarium.

    摘要翻译: 提供了一个用于水族馆的过滤系统。 过滤系统包括门室,其中定位有门导管,其将来自水族箱的未处理的水输送。 门室包括过滤介质。 过滤系统还包括流体耦合到门室的虹吸室。 虹吸管具有在虹吸室内的第一高度处的虹吸管道入口,在第一高度以下的第二高度处的虹吸管出口,以及位于第一和第二海拔以上的第三高度处的波峰。 虹吸管排空到集水盆中,处理后的水被运回水族馆。

    Cross-contaminant shield in sputtering system
    6.
    发明授权
    Cross-contaminant shield in sputtering system 有权
    溅射系统中的交叉污染屏蔽

    公开(公告)号:US07785455B2

    公开(公告)日:2010-08-31

    申请号:US11107283

    申请日:2005-04-14

    IPC分类号: C23C14/00

    摘要: A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. The system includes a sputtering chamber and a separate pre-clean chamber, where wafers can be transferred between the two chambers by a robotic arm without breaking a vacuum. The wafers are mounted one-by-one onto a rotating pallet in the pre-cleaning chamber and sputtering chamber. The pallet is firmly fixed to a rotatable table in the sputtering chamber. Copper tubing in the table couples RF energy to the wafers, and a liquid running through the copper tubing controls the temperature of the wafers. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate over their respective targets for uniform target erosion and uniform deposition on the wafers. An electrically insulated target backing plate between each magnet and a target has a liquid channel running through it for controlling temperature. The distance between the magnets and the targets is made very small by a thin aluminum plate fixed to the bottom segment of the target backing plate by a dip brazing process. Various shields are described to prevent cross-contamination from the targets and prevent the sputtered target material from entering gaps in the chamber and shorting out insulators.

    摘要翻译: 描述了用于在真空室中一次在多个工件(晶片,显示面板或任何其他工件)上沉积材料的多室处理系统。 该系统包括溅射室和单独的预清洁室,其中晶片可以通过机器臂在两个室之间传递而不破坏真空。 将晶片一个接一个地安装在预清洁室和溅射室中的旋转托盘上。 托盘牢固地固定在溅射室中的可旋转工作台上。 表中的铜管将RF能量耦合到晶片,并且穿过铜管的液体控制晶片的温度。 相同或不同材料的多个目标可以在托盘旋转的同时将材料沉积在晶片上。 在溅射室中的磁控管组件中的多个磁体(一个用于每个靶)在其各自的靶上摆动,以均匀的目标腐蚀和在晶片上的均匀沉积。 在每个磁体和靶之间的电绝缘的目标背板具有通过其的液体通道用于控制温度。 通过浸焊法将固定在目标背板底部的薄铝板,将磁体和靶材之间的距离做得非常小。 描述了各种屏蔽,以防止目标的交叉污染,并防止溅射的目标材料进入腔室中的间隙并使绝缘体短路。

    Top shield for sputtering system
    7.
    发明申请
    Top shield for sputtering system 有权
    溅射系统顶盖

    公开(公告)号:US20060231391A1

    公开(公告)日:2006-10-19

    申请号:US11107110

    申请日:2005-04-14

    IPC分类号: C23C14/00

    摘要: A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. The system includes a sputtering chamber and a separate pre-clean chamber, where wafers can be transferred between the two chambers by a robotic arm without breaking a vacuum. The wafers are mounted one-by-one onto a rotating pallet in the pre-cleaning chamber and sputtering chamber. The pallet is firmly fixed to a rotatable table in the sputtering chamber. Copper tubing in the table couples RF energy to the wafers, and a liquid running through the copper tubing controls the temperature of the wafers. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate over their respective targets for uniform target erosion and uniform deposition on the wafers. An electrically insulated target backing plate between each magnet and a target has a liquid channel running through it for controlling temperature. The distance between the magnets and the targets is made very small by a thin aluminum plate fixed to the bottom segment of the target backing plate by a dip brazing process. Various shields are described to prevent cross-contamination from the targets and prevent the sputtered target material from entering gaps in the chamber and shorting out insulators.

    摘要翻译: 描述了用于在真空室中一次在多个工件(晶片,显示面板或任何其他工件)上沉积材料的多室处理系统。 该系统包括溅射室和单独的预清洁室,其中晶片可以通过机器臂在两个室之间传递而不破坏真空。 将晶片一个接一个地安装在预清洁室和溅射室中的旋转托盘上。 托盘牢固地固定在溅射室中的可旋转工作台上。 表中的铜管将RF能量耦合到晶片,并且穿过铜管的液体控制晶片的温度。 相同或不同材料的多个目标可以在托盘旋转的同时将材料沉积在晶片上。 在溅射室中的磁控管组件中的多个磁体(一个用于每个靶)在其各自的靶上摆动,以均匀的目标腐蚀和在晶片上的均匀沉积。 在每个磁体和靶之间的电绝缘的目标背板具有通过其的液体通道用于控制温度。 通过浸焊法将固定在目标背板底部的薄铝板,将磁体和靶材之间的距离做得非常小。 描述了各种屏蔽,以防止目标的交叉污染,并防止溅射的目标材料进入腔室中的间隙并使绝缘体短路。

    Oscillating magnet in sputtering system
    8.
    发明申请
    Oscillating magnet in sputtering system 有权
    溅射系统中的振荡磁体

    公开(公告)号:US20060231383A1

    公开(公告)日:2006-10-19

    申请号:US11107620

    申请日:2005-04-14

    IPC分类号: C23C14/32 C23C14/00

    摘要: A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. The system includes a sputtering chamber and a separate pre-clean chamber, where wafers can be transferred between the two chambers by a robotic arm without breaking a vacuum. The wafers are mounted one-by-one onto a rotating pallet in the pre-cleaning chamber and sputtering chamber. The pallet is firmly fixed to a rotatable table in the sputtering chamber. Copper tubing in the table couples RF energy to the wafers, and a liquid running through the copper tubing controls the temperature of the wafers. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate over their respective targets for uniform target erosion and uniform deposition on the wafers. An electrically insulated target backing plate between each magnet and a target has a liquid channel running through it for controlling temperature. The distance between the magnets and the targets is made very small by a thin aluminum plate fixed to the bottom segment of the target backing plate by a dip brazing process. Various shields are described to prevent cross-contamination from the targets and prevent the sputtered target material from entering gaps in the chamber and shorting out insulators.

    摘要翻译: 描述了用于在真空室中一次在多个工件(晶片,显示面板或任何其他工件)上沉积材料的多室处理系统。 该系统包括溅射室和单独的预清洁室,其中晶片可以通过机器臂在两个室之间传递而不破坏真空。 将晶片一个接一个地安装在预清洁室和溅射室中的旋转托盘上。 托盘牢固地固定在溅射室中的可旋转工作台上。 表中的铜管将RF能量耦合到晶片,并且穿过铜管的液体控制晶片的温度。 相同或不同材料的多个目标可以在托盘旋转的同时将材料沉积在晶片上。 在溅射室中的磁控管组件中的多个磁体(一个用于每个靶)在其各自的靶上摆动,以均匀的目标腐蚀和在晶片上的均匀沉积。 在每个磁体和靶之间的电绝缘的目标背板具有通过其的液体通道用于控制温度。 通过浸焊法将固定在目标背板底部的薄铝板,将磁体和靶材之间的距离做得非常小。 描述了各种屏蔽,以防止目标的交叉污染,并防止溅射的目标材料进入腔室中的间隙并使绝缘体短路。

    Top shield for sputtering system
    10.
    发明授权
    Top shield for sputtering system 有权
    溅射系统顶盖

    公开(公告)号:US07794574B2

    公开(公告)日:2010-09-14

    申请号:US11107110

    申请日:2005-04-14

    IPC分类号: C23C14/00

    摘要: A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. The system includes a sputtering chamber and a separate pre-clean chamber, where wafers can be transferred between the two chambers by a robotic arm without breaking a vacuum. The wafers are mounted one-by-one onto a rotating pallet in the pre-cleaning chamber and sputtering chamber. The pallet is firmly fixed to a rotatable table in the sputtering chamber. Copper tubing in the table couples RF energy to the wafers, and a liquid running through the copper tubing controls the temperature of the wafers. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate over their respective targets for uniform target erosion and uniform deposition on the wafers. An electrically insulated target backing plate between each magnet and a target has a liquid channel running through it for controlling temperature. The distance between the magnets and the targets is made very small by a thin aluminum plate fixed to the bottom segment of the target backing plate by a dip brazing process. Various shields are described to prevent cross-contamination from the targets and prevent the sputtered target material from entering gaps in the chamber and shorting out insulators.

    摘要翻译: 描述了用于在真空室中一次在多个工件(晶片,显示面板或任何其他工件)上沉积材料的多室处理系统。 该系统包括溅射室和单独的预清洁室,其中晶片可以通过机器臂在两个室之间传递而不破坏真空。 将晶片一个接一个地安装在预清洁室和溅射室中的旋转托盘上。 托盘牢固地固定在溅射室中的可旋转工作台上。 表中的铜管将RF能量耦合到晶片,并且穿过铜管的液体控制晶片的温度。 相同或不同材料的多个目标可以在托盘旋转的同时将材料沉积在晶片上。 在溅射室中的磁控管组件中的多个磁体(一个用于每个靶)在其各自的靶上摆动,以均匀的目标腐蚀和在晶片上的均匀沉积。 在每个磁体和靶之间的电绝缘的目标背板具有通过其的液体通道用于控制温度。 通过浸焊法将固定在目标背板底部的薄铝板,将磁体和靶材之间的距离做得非常小。 描述了各种屏蔽,以防止目标的交叉污染,并防止溅射的目标材料进入腔室中的间隙并使绝缘体短路。