Eutectic bonding of ultrathin semiconductors
    2.
    发明授权
    Eutectic bonding of ultrathin semiconductors 失效
    超薄半导体的共晶键合

    公开(公告)号:US07476606B2

    公开(公告)日:2009-01-13

    申请号:US11390772

    申请日:2006-03-28

    IPC分类号: H01L21/00 H01L21/28

    CPC分类号: H01L21/2007

    摘要: Ultra-high speed semiconductors that are usually very thin and therefore very fragile still require connection to a circuit board and a heat transfer pathway. Ultra-high speed circuits and semiconductor devices are provided with a carrier plate formed on the backside of a wafer or substrate by a variety of deposition methods. The carrier plate is a series of metal layers, each being selected to enable the attachment of a relatively thick copper carrier plate to the backside of the substrate or wafer.

    摘要翻译: 通常非常薄且因此非常脆弱的超高速半导体仍需要连接到电路板和传热通路。 超高速电路和半导体器件具有通过各种沉积方法形成在晶片或衬底的背面上的载体板。 载体板是一系列金属层,每个金属层被选择为能够将相对厚的铜载体板附接到基板或晶片的背面。

    Eutectic bonding of ultrathin semiconductors
    3.
    发明申请
    Eutectic bonding of ultrathin semiconductors 失效
    超薄半导体的共晶键合

    公开(公告)号:US20070235744A1

    公开(公告)日:2007-10-11

    申请号:US11390772

    申请日:2006-03-28

    IPC分类号: H01L33/00

    CPC分类号: H01L21/2007

    摘要: Ultra-high speed semiconductors that are usually very thin and therefore very fragile still require connection to a circuit board and a heat transfer pathway. Ultra-high speed circuits and semiconductor devices are provided with a carrier plate formed on the backside of a wafer or substrate by a variety of deposition methods. The carrier plate is a series of metal layers, each being selected to enable the attachment of a relatively thick copper carrier plate to the backside of the substrate or wafer.

    摘要翻译: 通常非常薄且因此非常脆弱的超高速半导体仍需要连接到电路板和传热通路。 超高速电路和半导体器件具有通过各种沉积方法形成在晶片或衬底的背面上的载体板。 载体板是一系列金属层,每个金属层被选择为能够将相对厚的铜载体板附接到基板或晶片的背面。

    Integrated multi-purpose getter for radio-frequency (RF) circuit modules
    4.
    发明授权
    Integrated multi-purpose getter for radio-frequency (RF) circuit modules 有权
    用于射频(RF)电路模块的集成多用途吸气剂

    公开(公告)号:US07315069B2

    公开(公告)日:2008-01-01

    申请号:US10997252

    申请日:2004-11-24

    IPC分类号: H01L29/72

    摘要: An integrated getter structure and a method for its formation and installation in a circuit module enclosure (24). The integrated structure includes a hydrogen getter structure (10) and selected quantities of a material (20) that is formulated to provide both a particle getter function and an RF absorber function. In one embodiment, the material (20) is placed in discrete quantities over the hydrogen getter structure (10). In another embodiment, the hydrogen getter structure (10) is formed over a sheet of the material (20) and is provided with apertures (30) to expose the material (20).

    摘要翻译: 一种集成的吸气剂结构及其在电路模块外壳(24)中形成和安装的方法。 集成结构包括吸氢剂结构(10)和选定量的材料(20),其被配制成提供颗粒吸气剂功能和RF吸收剂功能。 在一个实施例中,材料(20)以氢离子吸收剂结构(10)的离散量放置。 在另一个实施例中,吸气剂结构(10)形成在材料片(20)上并且设置有孔(30)以暴露材料(20)。

    Integrated multi-purpose getter for radio-frequency (RF) circuit modules
    5.
    发明申请
    Integrated multi-purpose getter for radio-frequency (RF) circuit modules 有权
    用于射频(RF)电路模块的集成多用途吸气剂

    公开(公告)号:US20060110299A1

    公开(公告)日:2006-05-25

    申请号:US10997252

    申请日:2004-11-24

    IPC分类号: B01J19/08

    摘要: An integrated getter structure and a method for its formation and installation in a circuit module enclosure (24). The integrated structure includes a hydrogen getter structure (10) and selected quantities of a material (20) that is formulated to provide both a particle getter function and an RF absorber function. In one embodiment, the material (20) is placed in discrete quantities over the hydrogen getter structure (10). In another embodiment, the hydrogen getter structure (10) is formed over a sheet of the material (20) and is provided with apertures (30) to expose the material (20).

    摘要翻译: 一种集成的吸气剂结构及其在电路模块外壳(24)中形成和安装的方法。 集成结构包括吸氢剂结构(10)和选定量的材料(20),其被配制成提供颗粒吸气剂功能和RF吸收剂功能。 在一个实施例中,材料(20)以氢离子吸收剂结构(10)的离散量放置。 在另一个实施例中,吸气剂结构(10)形成在材料片(20)上并且设置有孔(30)以暴露材料(20)。

    High efficiency NLTL comb generator using time domain waveform synthesis technique

    公开(公告)号:US20080169846A1

    公开(公告)日:2008-07-17

    申请号:US11651989

    申请日:2007-01-11

    IPC分类号: H03B21/00 G06F1/04 H03K7/02

    CPC分类号: H03B25/00 H03K5/12

    摘要: A device and method are disclosed for synthesizing a waveform having pulse segments. An exemplary generator can include units having a time delay element and pulse generator generating the pulse segments. An input divider divides an input signal into signal instances that propagate through the units and an output combiner combines pulse segments to form the waveform. The pulse generators include a sharpening circuit for sharpening a rising edge and a falling edge of the pulse segments. The sharpening circuit includes a tunable delay element coupled to a non-linear transmission line (NLTL). Another NLTL can be coupled in parallel with the tunable delay element and the first NLTL. The NLTLs include input sections coupled to anodes or cathodes of Schottky diode elements, and the respective cathodes or anodes are coupled to a signal ground.

    3D MMIC balun and methods of making the same
    7.
    发明申请
    3D MMIC balun and methods of making the same 有权
    3D MMIC平衡 - 不平衡变换器及其制作方法

    公开(公告)号:US20070052491A1

    公开(公告)日:2007-03-08

    申请号:US11218968

    申请日:2005-09-02

    IPC分类号: H03H7/42

    摘要: A three dimensional (3D) monolithic integrated circuit (MMIC) balun and methods of making the same are provided. A primary spiral winding is spaced apart from a secondary primary winding by a gap in a substantially aligned stacked configuration forming a balun. The gap medium can be a low dielectric constant material if employing a multi-metal process or air if employing a wafer level packaging process.

    摘要翻译: 提供了三维(3D)单片集成电路(MMIC)平衡 - 不平衡变换器及其制造方法。 初级螺旋绕组与次级初级绕组间隔开一个形成一个平衡 - 不平衡变换器的基本对齐的堆叠结构的间隙。 如果使用多金属工艺或空气,如果采用晶片级封装工艺,间隙介质可以是低介电常数材料。

    Inexpensive wafer level MMIC chip packaging
    9.
    发明授权
    Inexpensive wafer level MMIC chip packaging 有权
    廉价晶圆级MMIC芯片封装

    公开(公告)号:US06888253B1

    公开(公告)日:2005-05-03

    申请号:US10799062

    申请日:2004-03-11

    摘要: An inexpensive package for a semiconductor chip (1) that incorporates a stress relief buffer (13) between a side of the chip and the metal carrier layer (2) to absorb thermally induced stress produced by significantly different rates of thermal expansion of the wafer and the metal carrier. The buffer (13) is formed by a polymer that is flexible and can be etched, contains a coefficient of thermal expansion that does not significantly differ from that of the chip and/or a combination of CET and elasticity that retains a physical connection with the side of the chip and the metal carrier over the temperature range of operation anticipated for the chip. Polyimide or paraylene are preferred examples. Vias (15) extend through the buffer to place the metal carrier electrically in common with the metal layer (5) found on the back surface of the wafer so that an electrical ground applied to the metal carrier layer (2) may extend through to that surface.

    摘要翻译: 一种用于半导体芯片(1)的便宜包装,其包括在芯片的一侧和金属载体层(2)之间的应力消除缓冲器(13),以吸收由晶片的显着不同的热膨胀率产生的热诱导应力;以及 金属载体。 缓冲器(13)由柔性且可被蚀刻的聚合物形成,其包含与芯片的热膨胀系数无明显差异的热膨胀系数和/或CET与弹性的组合,其保持与 侧面的芯片和金属载体在芯片的预期工作温度范围内。 聚酰亚胺或对甲苯是优选的实例。 通孔(15)延伸穿过缓冲器以使金属载体与晶片背面上发现的金属层(5)电共同放置,使得施加到金属载体层(2)的电地可延伸到 表面。

    Multi-carrier receiver frequency conversion architecture
    10.
    发明授权
    Multi-carrier receiver frequency conversion architecture 有权
    多载波接收机变频架构

    公开(公告)号:US06741847B1

    公开(公告)日:2004-05-25

    申请号:US09605232

    申请日:2000-06-28

    IPC分类号: H04B110

    摘要: A frequency down-converter (18) for a receiver (10) in a wireless telecommunications system. The down-converter (18) is capable of simultaneously processing a plurality of signal channels without increased signal distortion over a relatively wide bandwidth. The frequency down-converter (18) employs a suitable mixer (28), bandpass filter (32), attenuator (34) and transformer (36) that are tuned to provide the desired frequency down-conversion and amplitude control over the desired wideband width. In one embodiment, the bandpass filter passes a frequency band at 25 MHz or above. The frequency down-converter (18) generates the IF signal in a single step down-conversion process, or generates the IF signal and then a baseband signal in a two step down-conversion process.

    摘要翻译: 一种用于无线电信系统中的接收机(10)的下变频器(18)。 下变换器(18)能够在相对宽的带宽上同时处理多个信号通道而不增加信号失真。 降频转换器(18)采用合适的混频器(28),带通滤波器(32),衰减器(34)和变压器(36),其被调谐以在期望的宽带宽度上提供期望的频率下变频和幅度控制 。 在一个实施例中,带通滤波器通过25MHz或更高的频带。 降频转换器(18)在单步降压转换处理中产生IF信号,或者在两步下变频处理中产生IF信号,然后产生基带信号。