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Patent Agency Ranking
公开(公告)号：US20160027580A1
公开(公告)日：2016-01-28
申请号：US14873532
申请日：2015-10-02
Applicant: Delphi Technologies, Inc. , UChicago Argonne, LLC
Inventor： Manuel Ray Fairchild , Ralph S. Taylor , Carl W. Berlin , Celine Wk Wong , Beihai Ma , Uthamalingam Balachandran
CPC classification number: H01G4/1245 , H01G4/008 , H01G4/012 , H01G4/30 , H01G4/306 , H01G4/33 , H01G4/38 , H01L28/55 , Y10T29/417
Abstract: A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.
Abstract translation: 在由玻璃形成的基板上的铅 - 镧 - 钛酸锆（PLZT）电容器。 第一金属化层沉积在基板的顶侧上以形成第一电极。 PLZT的介电层沉积在第一金属化层上。 第二金属化层沉积在电介质层上以形成第二电极。 玻璃基板是有利的，因为玻璃与用于形成电容器的退火工艺相容。
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2.发明申请公开(公告)号：US20170098750A1
公开(公告)日：2017-04-06
申请号：US14873763
申请日：2015-10-02
Applicant: Delphi Technologies, Inc.
Inventor： Carl W. Berlin , Scott D. Brandenburg , Bruce A. Myers
IPC: H01L35/30
CPC classification number: H01L35/30 , F01N5/025 , F01N2240/02 , F01N2510/00 , F01N2530/00 , F01N2530/04 , Y02T10/16
Abstract: An assembly for coupling thermally a thermoelectric generator (TEG) to an exhaust manifold includes a first heat-exchanger, a first dielectric-layer, a TEG, and a direct-bond-copper-arrangement (DBC). The first dielectric-layer overlies a portion of the outer surface of the first heat-exchanger. The first dielectric-layer is formed by firing a thick-film dielectric material onto the stainless steel of the first heat-exchanger. The TEG defines a first contact suitable to be coupled thermally and electrically to the first conductor-layer. The DBC is interposed between the first dielectric-layer and the first contact of the TEG. The DBC is formed by an adhesion-layer formed of high-adhesion-copper-thick-film in contact with the first dielectric-layer, a bond-layer formed of copper-thick-film that overlies and is in contact with the adhesion-layer opposite the first-dielectric-layer, and a copper-foil-layer that overlies and is in contact with the bond-layer opposite the adhesion-layer.
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公开(公告)号：US09299496B2
公开(公告)日：2016-03-29
申请号：US14873532
申请日：2015-10-02
Applicant: Delphi Technologies, Inc. , UChicago Argonne, LLC
Inventor： Manuel Ray Fairchild , Ralph S. Taylor , Carl W. Berlin , Celine Wk Wong , Beihai Ma , Uthamalingam Balachandran
CPC classification number: H01G4/1245 , H01G4/008 , H01G4/012 , H01G4/30 , H01G4/306 , H01G4/33 , H01G4/38 , H01L28/55 , Y10T29/417
Abstract: A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.
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公开(公告)号：US09230739B2
公开(公告)日：2016-01-05
申请号：US14065837
申请日：2013-10-29
Applicant: DELPHI TECHNOLOGIES, INC. , UCHICAGO ARGONNE, LLC, OPERATOR OF ARGONNE NATIONAL LABORATORY
Inventor： M. Ray Fairchild , Ralph S. Taylor , Carl W. Berlin , Celine W K Wong , Beihai Ma , Uthamalingam Balachandran
CPC classification number: H01G4/1245 , H01G4/008 , H01G4/012 , H01G4/30 , H01G4/306 , H01G4/33 , H01G4/38 , H01L28/55 , Y10T29/417
Abstract: A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.
Abstract translation: 在由玻璃形成的基板上的铅 - 镧 - 钛酸锆（PLZT）电容器。 第一金属化层沉积在基板的顶侧上以形成第一电极。 PLZT的介电层沉积在第一金属化层上。 第二金属化层沉积在电介质层上以形成第二电极。 玻璃基板是有利的，因为玻璃与用于形成电容器的退火工艺相容。
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公开(公告)号：US08987875B2
公开(公告)日：2015-03-24
申请号：US13789722
申请日：2013-03-08
Applicant: Delphi Technologies, Inc.
Inventor： Carl W. Berlin , Gary L. Eesley
IPC: H01L23/495 , H01L21/00 , H05K7/00 , H05K3/30 , H01L23/00 , H01L23/498 , H01L23/373
CPC classification number: H01L23/49575 , H01L23/3735 , H01L23/49513 , H01L23/49531 , H01L23/49537 , H01L23/49861 , H01L23/562 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/75 , H01L24/83 , H01L2224/2732 , H01L2224/29294 , H01L2224/29339 , H01L2224/32245 , H01L2224/33181 , H01L2224/75981 , H01L2224/83203 , H01L2224/83439 , H01L2224/8384 , H01L2924/1203 , H01L2924/12036 , H01L2924/1305 , H01L2924/13055 , H01L2924/3511 , Y10T29/4913 , Y10T29/49149 , Y10T29/49169 , H01L2924/00014 , H01L2924/00
Abstract: An assembly for packaging one or more electronic devices in die form. The assembly includes substrates on opposite sides of the assembly, with lead frames between the electronic devices and the substrates. The substrates, lead frames, and electronic devices are sintered together using silver-based sintering paste between each layer. The material and thicknesses of the substrates and lead frames are selected so stress experienced by the electronic devices caused by changes in temperature of the assembly are balanced from the center of the assembly, thereby eliminating the need for balancing stresses at a substrate level by applying substantially matching metal layers to both sides of the substrates.
Abstract translation: 一种用于以模具形式包装一个或多个电子设备的组件。 组件包括在组件的相对侧上的基板，电子设备和基板之间具有引线框架。 基板，引线框架和电子器件在各层之间使用银基烧结膏烧结在一起。 选择基板和引线框架的材料和厚度，使得由组件的温度变化引起的电子设备经受的应力从组件的中心平衡，从而消除了通过大体上施加基板水平的平衡应力的需要 将金属层与衬底的两侧相匹配。
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