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公开(公告)号:US20220250994A1
公开(公告)日:2022-08-11
申请号:US17441746
申请日:2020-03-26
Applicant: Denka Company Limited
Inventor: Saori INOUE , Shoji IWAKIRI , Yoshitaka MINAKATA , Ryo YOSHIMATSU , Ryuji KOGA , Tomoya YAMAGUCHI
IPC: C04B41/48 , C04B35/583 , C04B38/00
Abstract: One aspect of the present invention is a method for producing a composite, including a step of placing a porous boron nitride sintered body immersed in a resin composition under a pressurized condition and then placing the boron nitride sintered body immersed in the resin composition under a pressure condition lower than the pressurized condition, wherein the step is repeated a plurality of times.
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公开(公告)号:US20220177375A1
公开(公告)日:2022-06-09
申请号:US17441763
申请日:2020-03-26
Applicant: Denka Company Limited
Inventor: Saori INOUE , Shoji IWAKIRI , Yoshitaka MINAKATA , Ryo YOSHIMATSU , Ryuji KOGA , Tomoya YAMAGUCHI
IPC: C04B35/583 , C04B41/83
Abstract: One aspect of the present invention is a composite including: a porous boron nitride sintered body; and a resin filled in pores of the boron nitride sintered body, wherein the boron nitride sintered body has an average pore diameter of 3.5 μm or less.
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公开(公告)号:US20200031723A1
公开(公告)日:2020-01-30
申请号:US16498648
申请日:2018-03-28
Applicant: DENKA COMPANY LIMITED
Inventor: Saori INOUE , Toshitaka YAMAGATA , Yoshitaka MINAKATA , Ryo YOSHIMATSU , Ryuji KOGA
IPC: C04B35/583 , C04B41/83 , H01L23/373 , H01L23/34
Abstract: A thermal conductive member includes: first and second surface layers including an insulating material A, and an intermediate layer including an insulating material B. The insulating material A includes a first boron nitride sintered body having an orientation degree of hexagonal boron nitride primary particles of 0.6 to 1.4, and a first heat curable resin composition impregnating in the first boron nitride sintered body. The insulating material B includes a second boron nitride sintered body having an orientation degree of hexagonal boron nitride primary particles of 0.01 to 0.05, and a second heat curable resin composition impregnating in the second boron nitride sintered body.
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公开(公告)号:US20230271888A1
公开(公告)日:2023-08-31
申请号:US17998687
申请日:2021-05-13
Applicant: Denka Company Limited
Inventor: Nobuya SUZUKI , Saori INOUE , Yasuhisa UESHIMA , Ryo YOSHIMATSU , Ryuji KOGA
CPC classification number: C04B41/4884 , B29C39/10 , C04B35/583 , C04B41/0063 , C04B41/83 , C04B41/4521 , C04B41/4525 , H01L33/641
Abstract: One aspect of the present disclosure provides a production method for a composite, the method including: a cooling step of performing cooling under a pressurized condition in a state where a heated molten material of a thermosetting composition is brought into contact with a resin-impregnated body, in which the above-described resin-impregnated body includes a nitride sintered body having a porous structure and a semi-cured product of the thermosetting composition impregnated into the above-described nitride sintered body.
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公开(公告)号:US20230227370A1
公开(公告)日:2023-07-20
申请号:US17998690
申请日:2021-05-13
Applicant: Denka Company Limited
Inventor: Nobuya SUZUKI , Saori INOUE , Yasuhisa UESHIMA , Ryo YOSHIMATSU , Ryuji KOGA
CPC classification number: C04B37/021 , C04B35/583 , C04B41/83 , C04B41/4884 , B32B3/26 , B32B9/005 , B32B9/041 , C04B2237/361 , C04B2237/407 , C04B2237/52 , H01L33/641
Abstract: One aspect of the present disclosure provides a composite body including: a nitride sintered body having a porous structure; and a semi-cured product of a thermosetting composition impregnated into the above-described nitride sintered body, in which dielectric breakdown voltage is 4.5 kV or higher.
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公开(公告)号:US20210017448A1
公开(公告)日:2021-01-21
申请号:US17040423
申请日:2019-03-14
Inventor: Hiroaki TOYOSHIMA , Ryo YOSHIMATSU , Taiyo YAMAURA , Masato AKABANE , Naoto HIROSAKI
Abstract: A phosphor in which an element represented by Rδ is solid-solutionized in a phosphor host crystal represented by Mα(L, A)βXγ, wherein M is at least one type of element selected from Mg, Ca, Sr, Ba and Zn, L is at least one type of element selected from Li, Na and K, A is at least one type of element selected from Al, Ga, B, In, Sc, Y, La and Si, X is at least one type of element selected from O, N, F and Cl (where all of X being N is excluded), R is at least one type of element selected from Mn, Cr, Ti, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho and Yb, α, β, γ and δ satisfy α+β+γ+δ=9, 0.00
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