CBRAM/ReRAM with improved program and erase algorithms
    1.
    发明授权
    CBRAM/ReRAM with improved program and erase algorithms 有权
    CBRAM / ReRAM具有改进的编程和擦除算法

    公开(公告)号:US08659954B1

    公开(公告)日:2014-02-25

    申请号:US13548470

    申请日:2012-07-13

    IPC分类号: G11C7/00

    摘要: Structures and methods for controlling operation of a programmable impedance element are disclosed herein. In one embodiment, a method of controlling a programmable impedance element can include: (i) receiving a program or erase command to be executed on the programmable impedance element; (ii) selecting an operation algorithm for executing the command, where the operation algorithm is selected from among a plurality of operation algorithms by decoding at least two bits stored in a register; (iii) determining, using the register, a plurality of option variables for the selected operation algorithm, where the option variables are used to set conditions for one or more of a plurality of program and erase operations of the selected operation algorithm; and (iv) executing the command on the programmable impedance element by performing the one or more of the plurality of program and erase operations of the selected operation algorithm.

    摘要翻译: 本文公开了用于控制可编程阻抗元件的操作的结构和方法。 在一个实施例中,控制可编程阻抗元件的方法可以包括:(i)接收要在可编程阻抗元件上执行的编程或擦除命令; (ii)选择用于执行命令的操作算法,其中通过解码存储在寄存器中的至少两个比特来从多个操作算法中选择操作算法; (iii)使用所述寄存器确定用于所选择的操作算法的多个选项变量,其中所述选项变量用于设置所选择的操作算法的多个编程和擦除操作中的一个或多个的条件; 以及(iv)通过执行所选择的操作算法的多个编程和擦除操作中的一个或多个来执行在可编程阻抗元件上的命令。