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公开(公告)号：US20090194760A1
公开(公告)日：2009-08-06
申请号：US12320307
申请日：2009-01-23
IPC分类号： H01L45/00 , H01L29/786
CPC分类号： H01L27/12 , G02F1/1362 , G09G3/3648 , G09G2300/088 , G09G2330/021 , H01L27/1214 , H01L27/24
摘要： Disclosed herein is a memory element, including a parallel combination of a thin film transistor; and a resistance change element, the thin film transistor including a semiconductor thin film in which a channel region, and an input terminal and an output terminal located on both sides of the channel region, respectively, are formed, and a gate electrode overlapping the channel region through an insulating film to become a control terminal, the resistance change element including one conductive layer connected to the input terminal side of the thin film transistor, the other conductive layer connected to the output terminal side of the thin film transistor, and at least one oxide film layer disposed between the one conductive layer and the other conductive layer.
摘要翻译： 这里公开了一种存储元件，包括薄膜晶体管的并联组合; 以及电阻变化元件，所述薄膜晶体管包括分别形成有沟道区域和位于所述沟道区域两侧的输入端子和输出端子的半导体薄膜，并且与所述沟道重叠的栅极电极 区域，通过绝缘膜成为控制端子，电阻变化元件包括连接到薄膜晶体管的输入端侧的一个导电层，连接到薄膜晶体管的输出端侧的另一导电层，至少 一个氧化物膜层设置在一个导电层和另一个导电层之间。
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公开(公告)号：US08115188B2
公开(公告)日：2012-02-14
申请号：US12320307
申请日：2009-01-23
CPC分类号： H01L27/12 , G02F1/1362 , G09G3/3648 , G09G2300/088 , G09G2330/021 , H01L27/1214 , H01L27/24
摘要： Disclosed herein is a memory element, including a parallel combination of a thin film transistor; and a resistance change element, the thin film transistor including a semiconductor thin film in which a channel region, and an input terminal and an output terminal located on both sides of the channel region, respectively, are formed, and a gate electrode overlapping the channel region through an insulating film to become a control terminal, the resistance change element including one conductive layer connected to the input terminal side of the thin film transistor, the other conductive layer connected to the output terminal side of the thin film transistor, and at least one oxide film layer disposed between the one conductive layer and the other conductive layer.
摘要翻译： 这里公开了一种存储元件，包括薄膜晶体管的并联组合; 以及电阻变化元件，所述薄膜晶体管包括分别形成有沟道区域和位于所述沟道区域两侧的输入端子和输出端子的半导体薄膜，并且与所述沟道重叠的栅极电极 区域，通过绝缘膜成为控制端子，电阻变化元件包括连接到薄膜晶体管的输入端侧的一个导电层，连接到薄膜晶体管的输出端侧的另一导电层，至少 一个氧化物膜层设置在一个导电层和另一个导电层之间。
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公开(公告)号：US08619208B2
公开(公告)日：2013-12-31
申请号：US12530801
申请日：2008-09-18
CPC分类号： H01L27/1222 , G02F1/1368 , G02F2001/13312 , G06F3/0412 , G06F3/0421 , H01L27/1214 , H01L27/124 , H01L29/66765
摘要： In the case of forming switching elements and light sensor elements over the same substrate, an increase in the film thickness of active layers in an attempt to enhance the sensitivity of the light sensor elements would adversely affect the characteristics of the switching elements (TFTs). In a configuration of a display in which a channel layer 25 for constituting thin film transistors to form the switching elements for pixels and a photoelectric conversion layer 35 for constituting the light sensor elements are provided over a gate insulating film 24 on a glass substrate 5 to be provided with a plurality of pixels arranged in a matrix pattern, the photoelectric conversion layer 35 is formed to be thicker than the channel layer 25, and/or the photoelectric conversion layer 35 is formed of a material different from the material for the channel layer 25, whereby the light absorption coefficient of the photoelectric conversion layer 35 is made to be higher than that of the channel layer 25.
摘要翻译： 在同一衬底上形成开关元件和光传感器元件的情况下，为了提高光传感器元件的灵敏度，活性层的膜厚度的增加将不利地影响开关元件（TFT）的特性。 在用于构成用于像素的开关元件的薄膜晶体管的沟道层25和用于构成光传感器元件的光电转换层35的显示器的配置设置在玻璃基板5上的栅极绝缘膜24上 设置有以矩阵图案排列的多个像素，光电转换层35形成为比沟道层25厚，和/或光电转换层35由与沟道层材料不同的材料形成 25，由此使光电转换层35的光吸收系数高于沟道层25的光吸收系数。
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公开(公告)号：US20100171120A1
公开(公告)日：2010-07-08
申请号：US12530801
申请日：2008-09-18
CPC分类号： H01L27/1222 , G02F1/1368 , G02F2001/13312 , G06F3/0412 , G06F3/0421 , H01L27/1214 , H01L27/124 , H01L29/66765
摘要： In the case of forming switching elements and light sensor elements over the same substrate, an increase in the film thickness of active layers in an attempt to enhance the sensitivity of the light sensor elements would adversely affect the characteristics of the switching elements (TFTs). In a configuration of a display in which a channel layer 25 for constituting thin film transistors to form the switching elements for pixels and a photoelectric conversion layer 35 for constituting the light sensor elements are provided over a gate insulating film 24 on a glass substrate 5 to be provided with a plurality of pixels arranged in a matrix pattern, the photoelectric conversion layer 35 is formed to be thicker than the channel layer 25, and/or the photoelectric conversion layer 35 is formed of a material different from the material for the channel layer 25, whereby the light absorption coefficient of the photoelectric conversion layer 35 is made to be higher than that of the channel layer 25.
摘要翻译： 在同一衬底上形成开关元件和光传感器元件的情况下，为了提高光传感器元件的灵敏度，活性层的膜厚度的增加将不利地影响开关元件（TFT）的特性。 在用于构成用于像素的开关元件的薄膜晶体管的沟道层25和用于构成光传感器元件的光电转换层35的显示器的配置设置在玻璃基板5上的栅极绝缘膜24上 设置有以矩阵图案排列的多个像素，光电转换层35形成为比沟道层25厚，和/或光电转换层35由与沟道层材料不同的材料形成 25，由此使光电转换层35的光吸收系数高于沟道层25的光吸收系数。
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公开(公告)号：US08134154B2
公开(公告)日：2012-03-13
申请号：US12392153
申请日：2009-02-25
CPC分类号： H01L29/7869 , H01L29/4908 , H01L29/66765 , H01L29/78651
摘要： A thin film transistor capable of reliably preventing the entry of light into an active layer, and a display including the thin film transistor are provided. A thin film transistor includes: a gate electrode; an active layer; and a gate insulating film arranged between the gate electrode and the active layer, the gate insulating film including a first insulating film, a first light-absorbing layer and a second insulating film, the first insulating film arranged in contact with the gate electrode, the first light-absorbing layer arranged in contact with the first insulating film and made of a material absorbing light of 420 nm or less, the second insulating film arranged between the first light-absorbing layer and the active layer.
摘要翻译： 提供能够可靠地防止光进入有源层的薄膜晶体管，以及包括薄膜晶体管的显示器。 薄膜晶体管包括：栅电极; 活性层 以及栅极绝缘膜，其配置在所述栅电极和所述有源层之间，所述栅极绝缘膜包括第一绝缘膜，第一光吸收层和第二绝缘膜，所述第一绝缘膜与所述栅极电极接触， 所述第一光吸收层与所述第一绝缘膜接触并由吸收420nm以下的光的材料制成，所述第二绝缘膜布置在所述第一光吸收层和所述有源层之间。
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公开(公告)号：US20090230390A1
公开(公告)日：2009-09-17
申请号：US12392153
申请日：2009-02-25
IPC分类号： H01L29/786 , H01L33/00
CPC分类号： H01L29/7869 , H01L29/4908 , H01L29/66765 , H01L29/78651
摘要： A thin film transistor capable of reliably preventing the entry of light into an active layer, and a display including the thin film transistor are provided. A thin film transistor includes: a gate electrode; an active layer; and a gate insulating film arranged between the gate electrode and the active layer, the gate insulating film including a first insulating film, a first light-absorbing layer and a second insulating film, the first insulating film arranged in contact with the gate electrode, the first light-absorbing layer arranged in contact with the first insulating film and made of a material absorbing light of 420 nm or less, the second insulating film arranged between the first light-absorbing layer and the active layer.
摘要翻译： 提供能够可靠地防止光进入有源层的薄膜晶体管，以及包括薄膜晶体管的显示器。 薄膜晶体管包括：栅电极; 活性层 以及栅极绝缘膜，其配置在所述栅电极和所述有源层之间，所述栅极绝缘膜包括第一绝缘膜，第一光吸收层和第二绝缘膜，所述第一绝缘膜与所述栅极电极接触， 所述第一光吸收层与所述第一绝缘膜接触并由吸收420nm以下的光的材料制成，所述第二绝缘膜布置在所述第一光吸收层和所述有源层之间。
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7.发明申请OPTICAL SENSOR ELEMENT, IMAGING DEVICE, ELECTRONIC EQUIPMENT AND MEMORY ELEMENT 有权光学传感器元件，成像设备，电子设备和存储元件公开(公告)号：US20100097838A1
公开(公告)日：2010-04-22
申请号：US12361049
申请日：2009-01-28
申请人： Tsutomu Tanaka , Dharam Pal Gosain
发明人： Tsutomu Tanaka , Dharam Pal Gosain
IPC分类号： G11C13/04 , H01L31/0296 , H01L31/112
CPC分类号： G11C13/047 , H01L27/14609 , H01L29/7869 , H04N5/374
摘要： An optical sensor element has a gate electrode opposed to a semiconductor layer made of an oxide semiconductor via a gate insulating film, source and drain electrodes being connected to the semiconductor layer, wherein the amount of light received by the semiconductor layer is read out as a drain current which changes in a non-volatile manner relative to a gate voltage.
摘要翻译： 光传感器元件具有通过栅极绝缘膜与由氧化物半导体形成的半导体层相对的栅电极，与半导体层连接的源电极和漏电极，其中半导体层所接收的光量被读出为 漏极电流以相对于栅极电压的非易失性方式变化。
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公开(公告)号：US08618545B2
公开(公告)日：2013-12-31
申请号：US13400845
申请日：2012-02-21
CPC分类号： H01L29/7869 , H01L29/4908 , H01L29/66765 , H01L29/78651
摘要： A thin film transistor capable of reliably preventing the entry of light into an active layer, and a display including the thin film transistor are provided. A thin film transistor includes: a gate electrode; an active layer; and a gate insulating film arranged between the gate electrode and the active layer, the gate insulating film including a first insulating film, a first light-absorbing layer and a second insulating film, the first insulating film arranged in contact with the gate electrode, the first light-absorbing layer arranged in contact with the first insulating film and made of a material absorbing light of 420 nm or less, the second insulating film arranged between the first light-absorbing layer and the active layer.
摘要翻译： 提供能够可靠地防止光进入有源层的薄膜晶体管，以及包括薄膜晶体管的显示器。 薄膜晶体管包括：栅电极; 活性层 以及栅极绝缘膜，其配置在所述栅电极和所述有源层之间，所述栅极绝缘膜包括第一绝缘膜，第一光吸收层和第二绝缘膜，所述第一绝缘膜与所述栅极电极接触， 所述第一光吸收层与所述第一绝缘膜接触并由吸收420nm以下的光的材料制成，所述第二绝缘膜布置在所述第一光吸收层和所述有源层之间。
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公开(公告)号：US20120146039A1
公开(公告)日：2012-06-14
申请号：US13400845
申请日：2012-02-21
IPC分类号： H01L33/08 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/4908 , H01L29/66765 , H01L29/78651
摘要： A thin film transistor capable of reliably preventing the entry of light into an active layer, and a display including the thin film transistor are provided. A thin film transistor includes: a gate electrode; an active layer; and a gate insulating film arranged between the gate electrode and the active layer, the gate insulating film including a first insulating film, a first light-absorbing layer and a second insulating film, the first insulating film arranged in contact with the gate electrode, the first light-absorbing layer arranged in contact with the first insulating film and made of a material absorbing light of 420 nm or less, the second insulating film arranged between the first light-absorbing layer and the active layer.
摘要翻译： 提供能够可靠地防止光进入有源层的薄膜晶体管，以及包括薄膜晶体管的显示器。 薄膜晶体管包括：栅电极; 活性层 以及栅极绝缘膜，其配置在所述栅电极和所述有源层之间，所述栅极绝缘膜包括第一绝缘膜，第一光吸收层和第二绝缘膜，所述第一绝缘膜与所述栅极电极接触， 所述第一光吸收层与所述第一绝缘膜接触并由吸收420nm以下的光的材料制成，所述第二绝缘膜布置在所述第一光吸收层和所述有源层之间。
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10.发明授权Optical sensor element, imaging device, electronic equipment and memory element 有权光学传感器元件，成像设备，电子设备和存储元件公开(公告)号：US08194469B2
公开(公告)日：2012-06-05
申请号：US12361049
申请日：2009-01-28
申请人： Tsutomu Tanaka , Dharam Pal Gosain
发明人： Tsutomu Tanaka , Dharam Pal Gosain
IPC分类号： G11C16/04
CPC分类号： G11C13/047 , H01L27/14609 , H01L29/7869 , H04N5/374
摘要： An optical sensor element has a gate electrode opposed to a semiconductor layer made of an oxide semiconductor via a gate insulating film, source and drain electrodes being connected to the semiconductor layer, wherein the amount of light received by the semiconductor layer is read out as a drain current which changes in a non-volatile manner relative to a gate voltage.
摘要翻译： 光传感器元件具有通过栅极绝缘膜与由氧化物半导体形成的半导体层相对的栅电极，与半导体层连接的源电极和漏电极，其中半导体层所接收的光量被读出为 漏极电流以相对于栅极电压的非易失性方式变化。
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