公开(公告)号：US08969819B2

公开(公告)日：2015-03-03

申请号：US13027328

申请日：2011-02-15

申请人： Tsutomu Tanaka ,  Makoto Takatoku ,  Yasuhiro Yamada ,  Ryoichi Ito

发明人： Tsutomu Tanaka ,  Makoto Takatoku ,  Yasuhiro Yamada ,  Ryoichi Ito

IPC分类号： G01T1/24 ,  H01L29/66 ,  H01L27/146 ,  G01T1/20 ,  H04N5/225 ,  H04N5/374 ,  H04N5/378

CPC分类号： H01L27/14676 ,  G01T1/2018 ,  H04N5/2251 ,  H04N5/374 ,  H04N5/378

摘要： A radiation image pickup apparatus allowed to restore a change in characteristics in a pixel transistors caused by radiation, and a method of driving the same are provided. The radiation image pickup apparatus includes: a pixel section including a plurality of unit pixels and generating an electrical signal based on incident radiation, each of the unit pixels including one or more pixel transistors and a photoelectric conversion element; a drive section for selectively driving the unit pixels of the pixel section; and a characteristic restoring section including a first constant current source for annealing and a selector switch for changing a current path from the unit pixels to the first constant current source at the time of non-measurement of the radiation, and allowing an annealing current to flow through the pixel transistor, thereby restoring characteristics of the pixel transistor.

摘要翻译： 允许放射线摄像装置恢复由辐射引起的像素晶体管的特性变化，以及其驱动方法。 放射线图像拾取装置包括：像素部分，包括多个单位像素，并且基于入射辐射产生电信号，每个单位像素包括一个或多个像素晶体管和光电转换元件; 用于选择性地驱动像素部分的单位像素的驱动部分; 以及特征恢复部，其包括用于退火的第一恒流源和用于在不测量辐射时改变从单位像素到第一恒定电流源的电流路径的选择器开关，并且允许退火电流流动 通过像素晶体管，从而恢复像素晶体管的特性。

公开(公告)号：US20110115767A1

公开(公告)日：2011-05-19

申请号：US12941276

申请日：2010-11-08

申请人： Michiru Senda ,  Makoto Takatoku ,  Tsutomu Harada

发明人： Michiru Senda ,  Makoto Takatoku ,  Tsutomu Harada

IPC分类号： G09G5/00 ,  G01J1/42

CPC分类号： G06F3/0412 ,  G06F3/0418 ,  G06F3/042

摘要： Techniques are described for detecting and compensating for characteristic changes of a photoelectric conversion element, such as changes related to the temperature of the photoelectric conversion element. A display device that includes an I/O display panel and a light-receiving drive circuit is disclosed. The I/O display panel includes a plurality of display pixels; and a plurality of photoelectric conversion elements including a first photoelectric conversion element that substantially is shielded from light and a second photoelectric conversion element that is exposed to light. The light-receiving drive circuit receives a first detection signal from the first photoelectric conversion element and resets the second photoelectric conversion element based on the first detection signal.

摘要翻译： 描述了用于检测和补偿光电转换元件的特性变化的技术，例如与光电转换元件的温度相关的变化。 公开了一种包括I / O显示面板和光接收驱动电路的显示装置。 I / O显示面板包括多个显示像素; 以及多个光电转换元件，包括基本上被遮光的第一光电转换元件和暴露于光的第二光电转换元件。 光接收驱动电路接收来自第一光电转换元件的第一检测信号，并且基于第一检测信号复位第二光电转换元件。

公开(公告)号：US06693258B2

公开(公告)日：2004-02-17

申请号：US10061392

申请日：2002-02-04

申请人： Yukiyasu Sugano ,  Masahiro Fujino ,  Michio Mano ,  Akihiko Asano ,  Masumitsu Ino ,  Takenobu Urazono ,  Makoto Takatoku

发明人： Yukiyasu Sugano ,  Masahiro Fujino ,  Michio Mano ,  Akihiko Asano ,  Masumitsu Ino ,  Takenobu Urazono ,  Makoto Takatoku

IPC分类号： H01L2976

CPC分类号： H01L21/02686 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78678

摘要： A polycrystalline thin film of good quality is obtained by improving a crystallization process of a semiconductor thin film using laser light. After conducting a film forming step of forming a non-single crystal semiconductor thin film on a surface of a substrate, an annealing step is conducted by irradiating with laser light to convert the non-single crystal semiconductor thin film to a polycrystalline material. The annealing step is conducted by changing and adjusting the cross sectional shape of the laser light to a prescribed region. The semiconductor thin film is irradiated once or more with a pulse of laser light having an emission time width from upstand to downfall of 50 ns or more and having a constant cross sectional area, so as to convert the semiconductor thin film contained in an irradiated region corresponding to the cross sectional area to a polycrystalline material at a time. At this time, the energy intensity of laser light from upstand to downfall is controlled to apply a desired change. According to the procedures, a polycrystalline material having a large particle diameter or a uniform particle diameter can be obtained. In some cases, upon irradiation with laser light, the substrate may be maintained in a non-oxidative atmosphere, or may be heated or cooled.

摘要翻译： 通过使用激光改善半导体薄膜的结晶处理，获得质量好的多晶薄膜。 在基板的表面上进行形成非单晶半导体薄膜的成膜工序后，通过用激光照射进行退火工序，将非单晶半导体薄膜转换成多晶材料。 通过将激光的横截面形状改变并调整到规定的区域来进行退火步骤。 半导体薄膜用发光时间宽度从50ns以上的发光时间宽度的激光脉冲照射一次以上，并且具有恒定的横截面积，以将包含在照射区域中的半导体薄膜 对应于一次的多晶材料的横截面积。 此时，控制从升降到下降的激光的能量强度以应用期望的变化。 根据该方法，可以获得具有大粒径或均匀粒径的多晶材料。 在一些情况下，在用激光照射时，可将基底保持在非氧化性气氛中，或者可以加热或冷却。

公开(公告)号：US08901562B2

公开(公告)日：2014-12-02

申请号：US13334945

申请日：2011-12-22

申请人： Yasuhiro Yamada ,  Tsutomu Tanaka ,  Makoto Takatoku

发明人： Yasuhiro Yamada ,  Tsutomu Tanaka ,  Makoto Takatoku

IPC分类号： H01L29/04 ,  H01L27/12 ,  H01L27/146 ,  H01L29/786 ,  H04N5/32

CPC分类号： H01L27/14663 ,  H01L29/78645 ,  H01L29/78648 ,  H04N5/32

摘要： There are provided a transistor and a radiation imaging device in which a shift in a threshold voltage due to radiation exposure may be suppressed. The transistor includes a first gate electrode, a first gate insulator, a semiconductor layer, a second gate insulator, and a second gate electrode in this order on a substrate. Each of the first and second gate insulators includes one or a plurality of silicon compound films having oxygen, and a total sum of thicknesses of the silicon compound films is 65 nm or less.

摘要翻译： 提供了晶体管和放射线成像装置，其中可以抑制由于辐射暴露引起的阈值电压的偏移。 晶体管在衬底上依次包括第一栅极电极，第一栅极绝缘体，半导体层，第二栅极绝缘体和第二栅极电极。 第一和第二栅极绝缘体中的每一个包括一个或多个具有氧的硅化合物膜，并且硅化合物膜的总厚度为65nm以下。

公开(公告)号：US08619208B2

公开(公告)日：2013-12-31

申请号：US12530801

申请日：2008-09-18

申请人： Dharam Pal Gosain ,  Tsutomu Tanaka ,  Makoto Takatoku

发明人： Dharam Pal Gosain ,  Tsutomu Tanaka ,  Makoto Takatoku

IPC分类号： G02F1/136 ,  G02F1/13

CPC分类号： H01L27/1222 ,  G02F1/1368 ,  G02F2001/13312 ,  G06F3/0412 ,  G06F3/0421 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/66765

摘要： In the case of forming switching elements and light sensor elements over the same substrate, an increase in the film thickness of active layers in an attempt to enhance the sensitivity of the light sensor elements would adversely affect the characteristics of the switching elements (TFTs). In a configuration of a display in which a channel layer 25 for constituting thin film transistors to form the switching elements for pixels and a photoelectric conversion layer 35 for constituting the light sensor elements are provided over a gate insulating film 24 on a glass substrate 5 to be provided with a plurality of pixels arranged in a matrix pattern, the photoelectric conversion layer 35 is formed to be thicker than the channel layer 25, and/or the photoelectric conversion layer 35 is formed of a material different from the material for the channel layer 25, whereby the light absorption coefficient of the photoelectric conversion layer 35 is made to be higher than that of the channel layer 25.

摘要翻译： 在同一衬底上形成开关元件和光传感器元件的情况下，为了提高光传感器元件的灵敏度，活性层的膜厚度的增加将不利地影响开关元件（TFT）的特性。 在用于构成用于像素的开关元件的薄膜晶体管的沟道层25和用于构成光传感器元件的光电转换层35的显示器的配置设置在玻璃基板5上的栅极绝缘膜24上 设置有以矩阵图案排列的多个像素，光电转换层35形成为比沟道层25厚，和/或光电转换层35由与沟道层材料不同的材料形成 25，由此使光电转换层35的光吸收系数高于沟道层25的光吸收系数。

公开(公告)号：US08593442B2

公开(公告)日：2013-11-26

申请号：US12941276

申请日：2010-11-08

申请人： Michiru Senda ,  Makoto Takatoku ,  Tsutomu Harada

发明人： Michiru Senda ,  Makoto Takatoku ,  Tsutomu Harada

IPC分类号： G09G5/00

CPC分类号： G06F3/0412 ,  G06F3/0418 ,  G06F3/042

摘要： Techniques are described for detecting and compensating for characteristic changes of a photoelectric conversion element, such as changes related to the temperature of the photoelectric conversion element. A display device that includes an I/O display panel and a light-receiving drive circuit is disclosed. The I/O display panel includes a plurality of display pixels; and a plurality of photoelectric conversion elements including a first photoelectric conversion element that substantially is shielded from light and a second photoelectric conversion element that is exposed to light. The light-receiving drive circuit receives a first detection signal from the first photoelectric conversion element and resets the second photoelectric conversion element based on the first detection signal.

摘要翻译： 描述了用于检测和补偿光电转换元件的特性变化的技术，例如与光电转换元件的温度相关的变化。 公开了一种包括I / O显示面板和光接收驱动电路的显示装置。 I / O显示面板包括多个显示像素; 以及多个光电转换元件，包括基本上被遮光的第一光电转换元件和暴露于光的第二光电转换元件。 光接收驱动电路接收来自第一光电转换元件的第一检测信号，并且基于第一检测信号复位第二光电转换元件。

公开(公告)号：US20100264422A1

公开(公告)日：2010-10-21

申请号：US12801791

申请日：2010-06-25

申请人： Hisao Hayashi ,  Masahiro Fujino ,  Yasushi Shimogaichi ,  Makoto Takatoku

发明人： Hisao Hayashi ,  Masahiro Fujino ,  Yasushi Shimogaichi ,  Makoto Takatoku

IPC分类号： H01L33/00 ,  H01L29/786

CPC分类号： H01L27/1222 ,  G02F1/13454 ,  H01L27/12 ,  H01L29/42384 ,  H01L29/66765 ,  H01L29/78645 ,  H01L29/78678

摘要： A thin film semiconductor device formed as integrated circuits on an insulating substrate with bottom gate type thin film transistors stacked with gate electrodes, a gate insulating film and a semiconductor thin film in the order from below upward. The gate electrodes comprise metallic materials with thickness less than 100 nm. The gate insulating film has a thickness thicker than the gate electrodes. The semiconductor thin film comprises polycrystalline silicon crystallized by a laser beam. By reducing thickness of metallic gate electrodes, thermal capacity becomes small and difference in thermal condition on the metallic gate electrodes and on the insulating substrate made of glass or the like becomes small. This invention relates to the task of uniforming and optimizing recrystallization by a laser anneal treatment provided for the semiconductor thin film which works as an active layer of the bottom gate type thin film transistors.

摘要翻译： 一种薄膜半导体器件，其形成为在具有从栅极电极，栅极绝缘膜和半导体薄膜堆叠的底栅型薄膜晶体管的绝缘基板上以从下向上的顺序形成为集成电路。 栅电极包括厚度小于100nm的金属材料。 栅极绝缘膜的厚度比栅电极厚。 半导体薄膜包括通过激光束结晶的多晶硅。 通过减小金属栅电极的厚度，热容量变小，并且金属栅电极和由玻璃等制成的绝缘基板上的热条件差异变小。 本发明涉及通过对作为底栅型薄膜晶体管的有源层的半导体薄膜提供的激光退火处理进行均匀化和优化再结晶的任务。

公开(公告)号：US20100171120A1

公开(公告)日：2010-07-08

申请号：US12530801

申请日：2008-09-18

申请人： Dharam Pal Gosain ,  Tsutomu Tanaka ,  Makoto Takatoku

发明人： Dharam Pal Gosain ,  Tsutomu Tanaka ,  Makoto Takatoku

IPC分类号： H01L33/08 ,  H01L21/28

CPC分类号： H01L27/1222 ,  G02F1/1368 ,  G02F2001/13312 ,  G06F3/0412 ,  G06F3/0421 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/66765

摘要： In the case of forming switching elements and light sensor elements over the same substrate, an increase in the film thickness of active layers in an attempt to enhance the sensitivity of the light sensor elements would adversely affect the characteristics of the switching elements (TFTs). In a configuration of a display in which a channel layer 25 for constituting thin film transistors to form the switching elements for pixels and a photoelectric conversion layer 35 for constituting the light sensor elements are provided over a gate insulating film 24 on a glass substrate 5 to be provided with a plurality of pixels arranged in a matrix pattern, the photoelectric conversion layer 35 is formed to be thicker than the channel layer 25, and/or the photoelectric conversion layer 35 is formed of a material different from the material for the channel layer 25, whereby the light absorption coefficient of the photoelectric conversion layer 35 is made to be higher than that of the channel layer 25.

摘要翻译： 在同一衬底上形成开关元件和光传感器元件的情况下，为了提高光传感器元件的灵敏度，活性层的膜厚度的增加将不利地影响开关元件（TFT）的特性。 在用于构成用于像素的开关元件的薄膜晶体管的沟道层25和用于构成光传感器元件的光电转换层35的显示器的配置设置在玻璃基板5上的栅极绝缘膜24上 设置有以矩阵图案排列的多个像素，光电转换层35形成为比沟道层25厚，和/或光电转换层35由与沟道层材料不同的材料形成 25，由此使光电转换层35的光吸收系数高于沟道层25的光吸收系数。

公开(公告)号：US20100085339A1

公开(公告)日：2010-04-08

申请号：US12562317

申请日：2009-09-18

申请人： Tsutomu TANAKA ,  Makoto Takatoku ,  Michiru Senda ,  Keiichiro Ishihara

发明人： Tsutomu TANAKA ,  Makoto Takatoku ,  Michiru Senda ,  Keiichiro Ishihara

IPC分类号： G09G5/00 ,  H01L31/101

CPC分类号： H01L27/1446 ,  H01L31/145

摘要： The present invention provides a sensor element including two diode elements connected in series to each other, and a capacitive element having one end connected to a junction point between the two diode elements. Each of the diode elements includes a semiconductor layer having a p-type semiconductor region and an n-type semiconductor region facing each other in an in-plane direction, an anode electrode connected to the p-type semiconductor region, a cathode electrode connected to the n-type semiconductor region, a gate insulting film adjoining the semiconductor layer in a stacking direction, and a gate electrode facing the semiconductor layer with the gate insulating film in between.

摘要翻译： 本发明提供一种传感器元件，其包括彼此串联连接的两个二极管元件，以及电容元件，其一端连接到两个二极管元件之间的接合点。 每个二极管元件包括具有p型半导体区域和在面内方向上彼此相对的n型半导体区域的半导体层，连接到p型半导体区域的阳极电极，连接到 n型半导体区域，在层叠方向上邻接半导体层的栅极绝缘膜以及面对半导体层的栅极电极与栅极绝缘膜之间。

公开(公告)号：US06933185B2

公开(公告)日：2005-08-23

申请号：US10394223

申请日：2003-03-24

申请人： Hiroyuki Wada ,  Yoshimi Hirata ,  Ayumu Taguchi ,  Koichi Tatsuki ,  Nobuhiko Umezu ,  Shigeo Kubota ,  Tetsuo Abe ,  Akifumi Ooshima ,  Tadashi Hattori ,  Makoto Takatoku ,  Yukiyasu Sugano

发明人： Hiroyuki Wada ,  Yoshimi Hirata ,  Ayumu Taguchi ,  Koichi Tatsuki ,  Nobuhiko Umezu ,  Shigeo Kubota ,  Tetsuo Abe ,  Akifumi Ooshima ,  Tadashi Hattori ,  Makoto Takatoku ,  Yukiyasu Sugano

IPC分类号： H01L21/263 ,  H01L21/66 ,  C30B28/02 ,  H01L21/786

CPC分类号： H01L22/12

摘要： The state of a polysilicon film formed by excimer laser annealing an amorphous silicon film is to be evaluated. When the amorphous silicon film is annealed to form a polysilicon film, linearity or periodicity presents itself in the spatial structure of the film surface of the polysilicon film formed depending on the energy applied to the amorphous silicon during annealing. This linearity or periodicity is processed as an image and represented numerically from the image by exploiting the linearity or periodicity. The state of the polysilicon film is checked based on the numerical results.

摘要翻译： 对通过非晶硅膜的准分子激光退火而形成的多晶硅膜的状态进行评价。 当非晶硅膜退火以形成多晶硅膜时，线性或周期性本身就取决于退火期间施加到非晶硅的能量而形成的多晶硅膜的膜表面的空间结构。 该线性或周期性被处理为图像并且通过利用线性或周期性从图像数字地表示。 基于数值结果检查多晶硅膜的状态。