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    Photolithography mask repair
    1.
    发明授权
    Photolithography mask repair 有权
    光刻面膜修复

    公开(公告)号：US07662524B2

    公开(公告)日：2010-02-16

    申请号：US12345368

    申请日：2008-12-29

    申请人： Diane K. Stewart ,  J. David Casey, Jr. ,  Joan Williams Casey, legal representative ,  John Beaty ,  Christian R. Musil ,  Steven Berger

    发明人： Diane K. Stewart ,  J. David Casey, Jr. ,  John Beaty ,  Christian R. Musil ,  Steven Berger

    IPC分类号： G03F1/00 ,  G03C5/00

    CPC分类号： G03F1/74 ,  G03F1/72

    摘要： Masks can be repaired by creating a structure that is different from the original design, but that produces the same aerial image. For example, missing opaque material can be replaced by implanting gallium atoms to reduce transmission and quartz can be etched to an appropriate depth to produce the proper phase. In another aspect, a laser or other means can be used to remove an area of a mask around a defect, and then mask structures, either the intended design structures or alternate structures that produce the same aerial image, can be constructed using charged particle beam deposition and etching. For example, an electron beam can be used to deposit quartz to alter the phase of transmitted light. An electron beam can also be used with a gas to etch quartz to remove a layer including implanted gallium atoms. Gallium staining can also be reduced or eliminated by providing a sacrificial layer that can be removed, along with the implanted gallium atoms, using, for example, a broad ion beam. In another aspect, a charged particle beam can be programmed to etch a defect using three-dimensional information derived from two charged particle beams images of the defect from different angle.

    摘要翻译： 可以通过创建与原始设计不同的结构来修复面具，但产生相同的空间图像。 例如，可以通过注入镓原子来代替缺少的不透明材料以减少透射，并且可以将石英蚀刻到适当的深度以产生适当的相位。 在另一方面，可以使用激光器或其他装置去除缺陷周围的掩模区域，然后可以使用带电粒子束来构造掩模结构，或者产生相同空间图像的预期设计结构或替代结构 沉积和蚀刻。 例如，电子束可用于沉积石英以改变透射光的相位。 电子束也可与气体一起使用以蚀刻石英以除去包括注入的镓原子的层。 也可以通过提供可以使用例如宽离子束与注入的镓原子一起除去的牺牲层来还原或消除镓染色。 在另一方面，带电粒子束可被编程为使用从两个带电粒子束导出的来自不同角度的缺陷图像的三维信息来蚀刻缺陷。

    PHOTOLITHOGRAPHY MASK REPAIR
    3.
    发明申请
    PHOTOLITHOGRAPHY MASK REPAIR 有权
    光刻胶修复

    公开(公告)号：US20090111036A1

    公开(公告)日：2009-04-30

    申请号：US12345368

    申请日：2008-12-29

    申请人： Diane K. Stewart ,  J.David Casey, JR. ,  Joan Williams Casey ,  John Beaty ,  Christian R. Musil ,  Steven Berger

    发明人： Diane K. Stewart ,  J.David Casey, JR. ,  Joan Williams Casey ,  John Beaty ,  Christian R. Musil ,  Steven Berger

    IPC分类号： G03F1/00

    CPC分类号： G03F1/74 ,  G03F1/72

    摘要： Masks can be repaired by creating a structure that is different from the original design, but that produces the same aerial image. For example, missing opaque material can be replaced by implanting gallium atoms to reduce transmission and quartz can be etched to an appropriate depth to produce the proper phase. In another aspect, a laser or other means can be used to remove an area of a mask around a defect, and then mask structures, either the intended design structures or alternate structures that produce the same aerial image, can be constructed using charged particle beam deposition and etching. For example, an electron beam can be used to deposit quartz to alter the phase of transmitted light. An electron beam can also be used with a gas to etch quartz to remove a layer including implanted gallium atoms. Gallium staining can also be reduced or eliminated by providing a sacrificial layer that can be removed, along with the implanted gallium atoms, using, for example, a broad ion beam. In another aspect, a charged particle beam can be programmed to etch a defect using three-dimensional information derived from two charged particle beams images of the defect from different angle.

    摘要翻译： 可以通过创建与原始设计不同的结构来修复面具，但产生相同的空间图像。 例如，可以通过注入镓原子来代替缺少的不透明材料以减少透射，并且可以将石英蚀刻到适当的深度以产生适当的相位。 在另一方面，可以使用激光器或其他装置去除缺陷周围的掩模区域，然后可以使用带电粒子束来构造掩模结构，或者产生相同空间图像的预期设计结构或替代结构 沉积和蚀刻。 例如，电子束可用于沉积石英以改变透射光的相位。 电子束也可与气体一起使用以蚀刻石英以除去包括注入的镓原子的层。 也可以通过提供可以使用例如宽离子束与注入的镓原子一起除去的牺牲层来还原或消除镓染色。 在另一方面，带电粒子束可被编程为使用从两个带电粒子束导出的来自不同角度的缺陷图像的三维信息来蚀刻缺陷。

    Charged particle beam system
    7.
    发明授权
    Charged particle beam system 有权
    带电粒子束系统

    公开(公告)号：US06979822B1

    公开(公告)日：2005-12-27

    申请号：US10801981

    申请日：2004-03-16

    申请人： Diane K. Stewart ,  W. Ralph Knowles ,  Brian T. Kimball

    发明人： Diane K. Stewart ,  W. Ralph Knowles ,  Brian T. Kimball

    IPC分类号： H01J37/244 ,  G01N23/00 ,  G01N23/225 ,  H01J37/02 ,  H01J37/252 ,  H01J37/28 ,  H01J37/317 ,  H01L21/027

    CPC分类号： G01N23/225 ,  H01J37/244 ,  H01J2237/0045 ,  H01J2237/2817 ,  H01J2237/31737 ,  H01J2237/31742 ,  H01J2237/31798

    摘要： A charged particle beam system uses an ion generator for charge neutralization. In some embodiments, the ion generator is configured to maintain an adequate gas pressure at the ion generator to generate ions, but a reduced pressure in the remainder of the vacuum chamber, so that another column can operate in the chamber either simultaneously or after an evacuation process that is much shorter than a process that would be required to evacuate the chamber from the full pressure required at the ion generator. The invention is particularly useful for repair of photolithography masks in a dual beam system.

    摘要翻译： 带电粒子束系统使用离子发生器进行电荷中和。 在一些实施例中，离子发生器被配置为在离子发生器处保持​​足够的气体压力以在真空室的其余部分中产生离子而减小压力，使得另一个柱可以同时或在排空之后在腔室中操作 该过程远远短于将离子发生器所需的全部压力从室内排出所需的过程。 本发明对于双光束系统中的光刻掩模的修复特别有用。