公开(公告)号：US20180193814A1

公开(公告)日：2018-07-12

申请号：US15905426

申请日：2018-02-26

申请人： Chow Tai Fook Jewellery Company Limited

发明人： Koon Chung HUI ,  Ho CHING ,  Ching Tom KONG

IPC分类号： B01J19/08 ,  C30B33/04 ,  C30B29/04 ,  H01J37/00 ,  B41M3/14 ,  C30B29/16 ,  C30B29/34 ,  C30B29/20

CPC分类号： B01J19/081 ,  B41M3/14 ,  C30B29/04 ,  C30B29/16 ,  C30B29/20 ,  C30B29/34 ,  C30B33/04 ,  H01J37/00 ,  H01J37/317 ,  H01J2237/31713 ,  H01J2237/31737 ,  Y10T428/24355

摘要： A method of forming one or more protrusions on an outer surface of a polished face of a solid state material, said method including the step of applying focused inert gas ion beam local irradiation towards an outer surface of a polished facet of a solid state material in a way of protruding top surface material; wherein irradiated focused inert gas ions from said focused inert gas ion bean penetrate the outer surface of said polished facet of said solid state material; and wherein irradiated focused inert gas ions cause expansive strain within the solid state crystal lattice of the solid state material below said outer surface at a pressure so as to induce expansion of solid state crystal lattice, and form a protrusion on the outer surface of the polished face of said solid state material.

公开(公告)号：US09822443B1

公开(公告)日：2017-11-21

申请号：US15010653

申请日：2016-01-29

申请人： Multibeam Corporation

发明人： Michael C. Smayling ,  Kevin M. Monahan ,  David K. Lam ,  Theodore A. Prescop

IPC分类号： H01J37/30 ,  C23C14/48

CPC分类号： H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

摘要： Methods, devices and systems for targeted, maskless modification of material on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform direct and knock-on ion implantation, producing patterned material modifications with selected chemical and 3D-structural profiles. The number of required process steps is reduced, reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding individual columns, and support superior, highly-configurable process execution and control. Targeted implantation can be used to prepare the substrate for patterned blanket etch; patterned ALD can be used to prepare the substrate for patterned blanket deposition; neither process requiring photomasks or resist. Arrays of highly configurable beam columns can also be used to perform both positive and negative tone lithography in a single pass.

公开(公告)号：US08007871B2

公开(公告)日：2011-08-30

申请号：US12161301

申请日：2007-01-26

申请人： Piu Francis Man ,  Salvatore J. Pace

发明人： Piu Francis Man ,  Salvatore J. Pace

IPC分类号： B05D1/04 ,  B05D3/06 ,  C23C16/00

CPC分类号： H01J49/165 ,  B05D1/60 ,  B05D3/06 ,  B05D3/145 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/168 ,  C01B2202/02 ,  C01B2202/06 ,  C23C4/123 ,  H01J37/08 ,  H01J37/3178 ,  H01J2237/057 ,  H01J2237/0815 ,  H01J2237/31701 ,  H01J2237/31737

摘要： Disclosed herein are apparatus and methods for selectively depositing molecular ions on nanoscale substrates such as carbon nanotube arrays using electrospray ionization.

摘要翻译： 本文公开了用于使用电喷雾电离在纳米尺度基底例如碳纳米管阵列上选择性沉积分子离子的装置和方法。

公开(公告)号：US07495244B2

公开(公告)日：2009-02-24

申请号：US11841583

申请日：2007-08-20

申请人： Michael John Zani ,  Mark Joseph Bennahmias ,  Mark Anthony Mayse ,  Jeffrey Winfield Scott

发明人： Michael John Zani ,  Mark Joseph Bennahmias ,  Mark Anthony Mayse ,  Jeffrey Winfield Scott

IPC分类号： G01K1/08 ,  H01J3/14 ,  H01J3/26

CPC分类号： H01J37/3056 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0432 ,  H01J2237/047 ,  H01J2237/30472 ,  H01J2237/31713 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01J2237/3175 ,  H01J2237/31766 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/76267 ,  H01L21/84 ,  H01L27/0629 ,  H01L29/66462 ,  H01L29/66659 ,  Y10T428/24802 ,  Y10T428/24893

摘要： A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

公开(公告)号：US07495242B2

公开(公告)日：2009-02-24

申请号：US11841630

申请日：2007-08-20

申请人： Michael John Zani ,  Mark Joseph Bennahmias ,  Mark Anthony Mayse ,  Jeffrey Winfield Scott

发明人： Michael John Zani ,  Mark Joseph Bennahmias ,  Mark Anthony Mayse ,  Jeffrey Winfield Scott

IPC分类号： G21K5/10 ,  H01J37/08

CPC分类号： H01J37/3056 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0432 ,  H01J2237/047 ,  H01J2237/30472 ,  H01J2237/31713 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01J2237/3175 ,  H01J2237/31766 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/76267 ,  H01L21/84 ,  H01L27/0629 ,  H01L29/66462 ,  H01L29/66659 ,  Y10T428/24802 ,  Y10T428/24893

摘要： A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

公开(公告)号：US07259373B2

公开(公告)日：2007-08-21

申请号：US11484015

申请日：2006-07-10

申请人： Michael John Zani ,  Mark Joseph Bennahmias ,  Mark Anthony Mayse ,  Jeffrey Winfield Scott

发明人： Michael John Zani ,  Mark Joseph Bennahmias ,  Mark Anthony Mayse ,  Jeffrey Winfield Scott

IPC分类号： G21K7/00

CPC分类号： H01J37/3056 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0432 ,  H01J2237/047 ,  H01J2237/30472 ,  H01J2237/31713 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01J2237/3175 ,  H01J2237/31766 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/76267 ,  H01L21/84 ,  H01L27/0629 ,  H01L29/66462 ,  H01L29/66659 ,  Y10T428/24802 ,  Y10T428/24893

摘要： A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

公开(公告)号：US20060043312A1

公开(公告)日：2006-03-02

申请号：US10931321

申请日：2004-08-31

申请人： James Siebert ,  Lokesh Johri ,  Dennis McCarty ,  Simon Voong ,  Madhumita Sengupta ,  Hui Wang

发明人： James Siebert ,  Lokesh Johri ,  Dennis McCarty ,  Simon Voong ,  Madhumita Sengupta ,  Hui Wang

IPC分类号： H01J37/147

CPC分类号： H01J37/3023 ,  H01J2237/30483 ,  H01J2237/31737 ,  H01J2237/31749

摘要： A charged particle beam system and scanning control method capable of imaging, and possibly editing, a device under test (DUT). The charged particle beam system contains a charged particle beam generation unit, such as a focused ion beam (FIB) column, which emits a charged particle beam onto the DUT. Also included is a scan controller arrangement implementing a finite state machine to control the application of the charged particle beam onto the DUT according to a plurality of scanning control parameters. The scanning control parameters may describe one or more scan regions that are rectangular in shape. Further, the parameters may describe one or more scan regions describing other shapes by way of a bit-map. Similarly, a method for controlling the scanning of a charged particle beam that involves obtaining a set of scanning control parameters, and then directing the charged particle beam as specified by the scanning control parameters by way of a finite state machine, is disclosed.

摘要翻译： 一种能够成像并可能编辑被测器件（DUT）的带电粒子束系统和扫描控制方法。 带电粒子束系统包含带电粒子束产生单元，例如聚焦离子束（FIB）柱，其将带电粒子束发射到DUT上。 还包括扫描控制器装置，其实现有限状态机以根据多个扫描控制参数来控制将带电粒子束应用到DUT上。 扫描控制参数可以描述形状为矩形的一个或多个扫描区域。 此外，参数可以描述通过位图描述其它形状的一个或多个扫描区域。 类似地，公开了一种用于控制带电粒子束的扫描的方法，该方法包括获得一组扫描控制参数，然后通过有限状态机指定由扫描控制参数指定的带电粒子束。

公开(公告)号：US20060038137A1

公开(公告)日：2006-02-23

申请号：US11196094

申请日：2005-08-03

申请人： Toshiaki Fujii ,  Masao Abe ,  Kunji Shigeto ,  Minuru Kawamura ,  Alekber Kasumov ,  Kazuhito Tsukagoshi ,  Yoshinobu Aoyagi

发明人： Toshiaki Fujii ,  Masao Abe ,  Kunji Shigeto ,  Minuru Kawamura ,  Alekber Kasumov ,  Kazuhito Tsukagoshi ,  Yoshinobu Aoyagi

IPC分类号： G21K7/00

CPC分类号： H01J37/3056 ,  H01J37/304 ,  H01J2237/043 ,  H01J2237/30466 ,  H01J2237/31732 ,  H01J2237/31737 ,  H01J2237/31749

摘要： A focused ion beam apparatus having two pieces of probers brought into contact with two points of a surface of a sample, a voltage source for applying a constant voltage between the two points with which the probers are brought into contact, and an ammeter for measuring a current flowing between the two points, in which a conductive film is formed to narrow a gap thereof between the two points by operating a deflection electrode and a gas gun and the current flowing between the two points is monitored, and when the current becomes a predetermined value, a focused charged particle beam irradiated to the surface of the sample is made OFF by the blanking electrode.

摘要翻译： 一种聚焦离子束装置，其具有与样品表面的两个点接触的两个探测器，用于在与探测器接触的两个点之间施加恒定电压的电压源，以及用于测量 在两点之间流动的电流，其中通过操作偏转电极和气枪来形成导电膜以使两点间的间隙变窄，并且监测在两点之间流动的电流，并且当电流变为预定的 通过消隐电极使照射到样品表面的聚焦带电粒子束截止。

公开(公告)号：US09673114B1

公开(公告)日：2017-06-06

申请号：US14695767

申请日：2015-04-24

申请人： Multibeam Corporation

发明人： David K. Lam ,  Kevin M. Monahan ,  Michael C. Smayling ,  Theodore A. Prescop

IPC分类号： H01L21/66 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/26 ,  H01J37/305 ,  H01J37/30

CPC分类号： H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

摘要： Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be removed from a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beams. Reducing the number of process steps, and eliminating lithography steps, in localized material removal has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material removal allows for controlled variation of removal rate and enables creation of 3D structures or profiles. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted substrate processing.

公开(公告)号：US20120112323A1

公开(公告)日：2012-05-10

申请号：US13354938

申请日：2012-01-20

申请人： Michael John Zani ,  Mark Joseph Bennahmias ,  Mark Anthony Mayse ,  Jeffrey Winfield Scott

发明人： Michael John Zani ,  Mark Joseph Bennahmias ,  Mark Anthony Mayse ,  Jeffrey Winfield Scott

IPC分类号： H01L21/265 ,  H01L29/06

CPC分类号： H01J37/3056 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0432 ,  H01J2237/047 ,  H01J2237/30472 ,  H01J2237/31713 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01J2237/3175 ,  H01J2237/31766 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/76267 ,  H01L21/84 ,  H01L27/0629 ,  H01L29/66462 ,  H01L29/66659 ,  Y10T428/24802 ,  Y10T428/24893

摘要： A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

摘要翻译： 用于将工件暴露于带电粒子的室包括用于产生带电粒子流的带电粒子源，准直器，被配置为沿着轴准直和引导带电粒子流从带电粒子源流出，准直器下游的光束数字化器 被配置为通过调整沿着轴的带电粒子之间的纵向间隔来创建包括至少一个带电粒子的组的数字光束，所述光束数字转换器的下游的偏转器包括沿轴线纵向设置以偏转数字光束的一系列偏转级， 以及构造成保持工件的偏转器下游的工件台。