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139 条记录 (耗时 0.023 秒)

    Spin oscillator device
    1.
    发明申请
    Spin oscillator device 有权
    旋转振荡器装置

    公开(公告)号：US20080150640A1

    公开(公告)日：2008-06-26

    申请号：US11590530

    申请日：2006-10-31

    申请人： Dimitar Velikov Dimitrov ,  Xilin Peng ,  Song S. Xue ,  Dexin Wang

    发明人： Dimitar Velikov Dimitrov ,  Xilin Peng ,  Song S. Xue ,  Dexin Wang

    IPC分类号： H03L7/26

    CPC分类号： H03B15/006 ,  H03L7/24

    摘要： A spin oscillator device generates a microwave output in response to an applied DC current. The device includes a spin momentum transfer (SMT) stack including a top electrode, a free layer, a nonmagnetic layer, a pinned magnetic structure, and a bottom electrode. A local magnetic field source adjacent the SMT stack applies a local magnetic field to the free layer to cause the magnetization direction of the free layer to be oriented at a tilt angle with respect to plane of the free layer. The local magnetic field source can include coils or an electromagnet structure, or permanent magnets in close proximity to the SMT stack.

    摘要翻译： 自旋振荡器装置响应于所施加的DC电流产生微波输出。 该装置包括自旋动量转移（SMT）堆叠，其包括顶部电极，自由层，非磁性层，钉扎磁性结构和底部电极。 邻近SMT堆叠的局部磁场源将局部磁场施加到自由层，以使自由层的磁化方向相对于自由层的平面倾斜。 局部磁场源可以包括线圈或电磁体结构，或者靠近SMT堆叠的永磁体。

    Spin oscillator device
    2.
    发明授权
    Spin oscillator device 有权
    旋转振荡器装置

    公开(公告)号：US07589600B2

    公开(公告)日：2009-09-15

    申请号：US11590530

    申请日：2006-10-31

    申请人： Dimitar Velikov Dimitrov ,  Xilin Peng ,  Song S. Xue ,  Dexin Wang

    发明人： Dimitar Velikov Dimitrov ,  Xilin Peng ,  Song S. Xue ,  Dexin Wang

    IPC分类号： H03B28/00

    CPC分类号： H03B15/006 ,  H03L7/24

    摘要： A spin oscillator device generates a microwave output in response to an applied DC current. The device includes a spin momentum transfer (SMT) stack including a top electrode, a free layer, a nonmagnetic layer, a pinned magnetic structure, and a bottom electrode. A local magnetic field source adjacent the SMT stack applies a local magnetic field to the free layer to cause the magnetization direction of the free layer to be oriented at a tilt angle with respect to plane of the free layer. The local magnetic field source can include coils or an electromagnet structure, or permanent magnets in close proximity to the SMT stack.

    摘要翻译： 自旋振荡器装置响应于所施加的DC电流产生微波输出。 该装置包括自旋动量转移（SMT）堆叠，其包括顶部电极，自由层，非磁性层，钉扎磁性结构和底部电极。 邻近SMT堆叠的局部磁场源将局部磁场施加到自由层，以使自由层的磁化方向相对于自由层的平面倾斜。 局部磁场源可以包括线圈或电磁体结构，或者靠近SMT堆叠的永磁体。

    SPIN-TORQUE MEMORY WITH UNIDIRECTIONAL WRITE SCHEME
    4.
    发明申请
    SPIN-TORQUE MEMORY WITH UNIDIRECTIONAL WRITE SCHEME 失效
    具有单向写入方案的旋转扭矩记忆

    公开(公告)号：US20090262638A1

    公开(公告)日：2009-10-22

    申请号：US12106382

    申请日：2008-04-21

    申请人： Haiwen Xi ,  Dexin Wang ,  Dimitar V. Dimitrov ,  Paul E. Anderson ,  Song S. Xue

    发明人： Haiwen Xi ,  Dexin Wang ,  Dimitar V. Dimitrov ,  Paul E. Anderson ,  Song S. Xue

    IPC分类号： G11B9/00

    CPC分类号： G11C11/16 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/1284 ,  G06T11/001 ,  G11C11/161 ,  G11C11/1675

    摘要： Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme.

    摘要翻译： 具有钉扎层，两个自由层和靠近至少一个自由层的电流阻挡绝缘层的自旋扭矩磁存储元件。 存储元件的电阻状态（例如，低电阻或高电阻）通过在一个方向上通过元件的电流来改变。 换句话说，为了从低电阻变为高电阻，电流的方向与从高电阻变为低电阻相同。 这些元素具有单向写入方案。

    Spin-torque memory with unidirectional write scheme
    9.
    发明授权
    Spin-torque memory with unidirectional write scheme 有权
    具有单向写入方案的自旋力矩存储器

    公开(公告)号：US08218356B2

    公开(公告)日：2012-07-10

    申请号：US12795020

    申请日：2010-06-07

    申请人： Haiwen Xi ,  Dexin Wang ,  Dimitar V. Dimitrov ,  Paul E. Anderson ,  Song S. Xue

    发明人： Haiwen Xi ,  Dexin Wang ,  Dimitar V. Dimitrov ,  Paul E. Anderson ,  Song S. Xue

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/1284 ,  G06T11/001 ,  G11C11/161 ,  G11C11/1675

    摘要： Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme.

    摘要翻译： 具有钉扎层，两个自由层和靠近至少一个自由层的电流阻挡绝缘层的自旋扭矩磁存储元件。 存储元件的电阻状态（例如，低电阻或高电阻）通过在一个方向上通过元件的电流来改变。 换句话说，为了从低电阻变为高电阻，电流的方向与从高电阻变为低电阻相同。 这些元素具有单向写入方案。