摘要:
According to one exemplary embodiment, an overmolded package includes a component situated on a substrate. The overmolded package further includes an overmold situated over the component and the substrate. The overmolded package further includes a wirebond cage situated over the substrate and in the overmold, where the wirebond cage surrounds the component, and where the wirebond cage includes a number of wirebonds. The wirebond cage forms an EMI shield around the component. According to this exemplary embodiment, the overmolded package further includes a conductive layer situated on a top surface of the overmold and connected to the wirebond cage, where the conductive layer forms an EMI shield over the component.
摘要:
According to one exemplary embodiment, an overmolded package includes a component situated on a substrate. The overmolded package further includes an overmold situated over the component and the substrate. The overmolded package further includes a wirebond cage situated over the substrate and in the overmold, where the wirebond cage surrounds the component, and where the wirebond cage includes a number of wirebonds. The wirebond cage forms an EMI shield around the component. According to this exemplary embodiment, the overmolded package further includes a conductive layer situated on a top surface of the overmold and connected to the wirebond cage, where the conductive layer forms an EMI shield over the component.
摘要:
According to one exemplary embodiment, an overmolded package includes a component situated on a substrate. The overmolded package further includes an overmold situated over the component and the substrate. The overmolded package further includes a wirebond cage situated over the substrate and in the overmold, where the wirebond cage surrounds the component, and where the wirebond cage includes a number of wirebonds. The wirebond cage forms an EMI shield around the component. According to this exemplary embodiment, the overmolded package further includes a conductive layer situated on a top surface of the overmold and connected to the wirebond cage, where the conductive layer forms an EMI shield over the component.
摘要:
According to one exemplary embodiment, an overmolded package includes a component situated on a substrate. The overmolded package further includes an overmold situated over the component and the substrate. The overmolded package further includes a wirebond cage situated over the substrate and in the overmold, where the wirebond cage surrounds the component, and where the wirebond cage includes a number of wirebonds. The wirebond cage forms an EMI shield around the component. According to this exemplary embodiment, the overmolded package further includes a conductive layer situated on a top surface of the overmold and connected to the wirebond cage, where the conductive layer forms an EMI shield over the component.
摘要:
According to one exemplary embodiment, an overmolded package includes a component situated on a substrate. The overmolded package further includes an overmold situated over the component and the substrate. The overmolded package further includes a wirebond cage situated over the substrate and in the overmold, where the wirebond cage surrounds the component, and where the wirebond cage includes a number of wirebonds. The wirebond cage forms an EMI shield around the component. According to this exemplary embodiment, the overmolded package further includes a conductive layer situated on a top surface of the overmold and connected to the wirebond cage, where the conductive layer forms an EMI shield over the component.
摘要:
According to one exemplary embodiment, an overmolded package includes a component situated on a substrate. The overmolded package further includes an overmold situated over the component and the substrate. The overmolded package further includes a wirebond cage situated over the substrate and in the overmold, where the wirebond cage surrounds the component, and where the wirebond cage includes a number of wirebonds. The wirebond cage forms an EMI shield around the component. According to this exemplary embodiment, the overmolded package further includes a conductive layer situated on a top surface of the overmold and connected to the wirebond cage, where the conductive layer forms an EMI shield over the component.
摘要:
According to one exemplary embodiment, an overmolded package includes a component situated on a substrate. The overmolded package further includes an overmold situated over the component and the substrate. The overmolded package further includes a wirebond cage situated over the substrate and in the overmold, where the wirebond cage surrounds the component, and where the wirebond cage includes a number of wirebonds. The wirebond cage forms an EMI shield around the component. According to this exemplary embodiment, the overmolded package further includes a conductive layer situated on a top surface of the overmold and connected to the wirebond cage, where the conductive layer forms an EMI shield over the component.
摘要:
Disclosed are devices and methods related to radio-frequency (RF) shielding of RF modules. In some embodiments, tuned shielding can be achieved by utilizing different structures and/or arrangements of shielding-wirebonds to increase shielding in areas where needed, and to decrease shielding where not needed. Such tuning of shielding requirements can be obtained by measuring RF power levels at different locations of a module having a given design. Such tuned RF shielding configurations can improve the overall effectiveness of shielding, and can also be more cost effective to implement.
摘要:
A method for dynamically determining the power compression point of an amplifier in a distributed network under the control of a computer, the network having a first terminal (600) including the amplifier operatively coupled to a plurality of second terminals (500) by a communication channel including the steps for generating bit error rate (BER) messages indicative of measured BER for a signal transmitted at N power levels, the BER messages including respective tags indicative of the N power levels for that BER, at the second terminals (500), and reducing the maximum allowed power of the amplifier when it is determined that the amplifier is approaching saturation responsive to the BER messages. Also described is a method for dynamic uplink power control for an amplifier in a distributed network.
摘要:
A method for dynamically determining the power compression point of an amplifier in a distributed network under the control of a computer, the network having a first terminal (600) including the amplifier operatively coupled to a plurality of second terminals (500) by a communication channel including the steps for generating bit error rate (BER) messages indicative of measured BER for a signal transmitted at N power levels, the BER messages including respective tags indicative of the N power levels for that BER, at the second terminals (500), and reducing the maximum allowed power of the amplifier when it is determined that the amplifier is approaching saturation responsive to the BER messages. Also described is a method for dynamic uplink power control for an amplifier in a distributed network.