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1.发明申请Methods For Depositing Metal Films On Diffusion Barrier Layers By CVD Processes 审中-公开通过CVD法在扩散阻挡层上沉积金属膜的方法公开(公告)号：US20080075855A1
公开(公告)日：2008-03-27
申请号：US11939224
申请日：2007-11-13
申请人： Diwakar Garg , Hansong Cheng , John Norman , Eduardo Machado , Pablo Ordejon
发明人： Diwakar Garg , Hansong Cheng , John Norman , Eduardo Machado , Pablo Ordejon
CPC分类号： H01L21/76843 , C23C14/58 , C23C14/5846 , H01L21/28556 , H01L21/3205 , H01L21/32051 , H01L21/76856 , H01L21/76876
摘要： A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the metal film on at least a portion of the surface via deposition by using a organometallic precursor. In certain embodiments, the diffusion barrier layer may be exposed to an adhesion promoting agent prior to or during at least a portion of the forming step. Suitable adhesion promoting agents include nitrogen, nitrogen-containing compounds, carbon-containing compounds, carbon and nitrogen containing compounds, silicon-containing compounds, silicon and carbon containing compounds, silicon, carbon, and nitrogen containing compounds, or mixtures thereof. The process of the present invention provides substrates having enhanced adhesion between the diffusion barrier layer and the metal film.
摘要翻译： 描述了在其上沉积有扩散阻挡层的衬底表面上沉积金属膜的方法。 在本发明的一个实施方案中，该方法包括：提供基本上不含元素金属的扩散阻挡层的表面，并通过使用有机金属前体沉积在至少部分表面上形成金属膜。 在某些实施方案中，扩散阻挡层可以在形成步骤的至少一部分之前或期间暴露于粘合促进剂。 合适的粘合促进剂包括氮，含氮化合物，含碳化合物，含碳和氮的化合物，含硅化合物，含硅和碳的化合物，硅，碳和氮的化合物或其混合物。 本发明的方法提供了在扩散阻挡层和金属膜之间具有增强的粘附性的基底。
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2.发明申请Diffusion Barrier Layers and Methods Comprising for Depositing Metal Films by CVD or ALD Processes 失效扩散阻挡层和包括通过CVD或ALD工艺沉积金属膜的方法公开(公告)号：US20070190779A1
公开(公告)日：2007-08-16
申请号：US11738187
申请日：2007-04-20
申请人： Diwakar Garg , Hansong Cheng , John Norman , Eduardo Machado , Pablo Ordejon
发明人： Diwakar Garg , Hansong Cheng , John Norman , Eduardo Machado , Pablo Ordejon
IPC分类号： C23C16/00
CPC分类号： H01L21/76843 , C23C14/58 , C23C14/5846 , H01L21/28556 , H01L21/3205 , H01L21/32051 , H01L21/76856 , H01L21/76876
摘要： A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the metal film on at least a portion of the surface via deposition by using a organometallic precursor. In certain embodiments, the diffusion barrier layer may be exposed to an adhesion promoting agent prior to or during at least a portion of the forming step. Suitable adhesion promoting agents include nitrogen, nitrogen-containing compounds, carbon-containing compounds, carbon and nitrogen containing compounds, silicon-containing compounds, silicon and carbon containing compounds, silicon, carbon, and nitrogen containing compounds, or mixtures thereof. The process of the present invention provides substrates having enhanced adhesion between the diffusion barrier layer and the metal film.
摘要翻译： 描述了在其上沉积有扩散阻挡层的衬底表面上沉积金属膜的方法。 在本发明的一个实施方案中，该方法包括：提供基本上不含元素金属的扩散阻挡层的表面，并通过使用有机金属前体沉积在至少部分表面上形成金属膜。 在某些实施方案中，扩散阻挡层可以在形成步骤的至少一部分之前或期间暴露于粘合促进剂。 合适的粘合促进剂包括氮，含氮化合物，含碳化合物，含碳和氮的化合物，含硅化合物，含硅和碳的化合物，硅，碳和氮的化合物或其混合物。 本发明的方法提供了在扩散阻挡层和金属膜之间具有增强的粘附性的基底。
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3.发明授权Methods for depositing metal films onto diffusion barrier layers by CVD or ALD processes 失效通过CVD或ALD工艺将金属膜沉积到扩散阻挡层上的方法公开(公告)号：US07985449B2
公开(公告)日：2011-07-26
申请号：US11738187
申请日：2007-04-20
IPC分类号： C23C16/06
CPC分类号： H01L21/76843 , C23C14/58 , C23C14/5846 , H01L21/28556 , H01L21/3205 , H01L21/32051 , H01L21/76856 , H01L21/76876
摘要： A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the metal film on at least a portion of the surface via deposition by using a organometallic precursor. In certain embodiments, the diffusion barrier layer may be exposed to an adhesion promoting agent prior to or during at least a portion of the forming step. Suitable adhesion promoting agents include nitrogen, nitrogen-containing compounds, carbon-containing compounds, carbon and nitrogen containing compounds, silicon-containing compounds, silicon and carbon containing compounds, silicon, carbon, and nitrogen containing compounds, or mixtures thereof. The process of the present invention provides substrates having enhanced adhesion between the diffusion barrier layer and the metal film.
摘要翻译： 描述了在其上沉积有扩散阻挡层的衬底表面上沉积金属膜的方法。 在本发明的一个实施方案中，该方法包括：提供基本上不含元素金属的扩散阻挡层的表面，并通过使用有机金属前体沉积在至少部分表面上形成金属膜。 在某些实施方案中，扩散阻挡层可以在形成步骤的至少一部分之前或期间暴露于粘合促进剂。 合适的粘合促进剂包括氮，含氮化合物，含碳化合物，含碳和氮的化合物，含硅化合物，含硅和碳的化合物，硅，碳和氮的化合物或其混合物。 本发明的方法提供了在扩散阻挡层和金属膜之间具有增强的粘附性的基底。
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4.发明授权Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes 失效通过CVD或ALD工艺在扩散阻挡层上沉积金属膜的方法公开(公告)号：US07311946B2
公开(公告)日：2007-12-25
申请号：US10428447
申请日：2003-05-02
CPC分类号： H01L21/76843 , C23C14/58 , C23C14/5846 , H01L21/28556 , H01L21/3205 , H01L21/32051 , H01L21/76856 , H01L21/76876
摘要： A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the metal film on at least a portion of the surface via deposition by using a organometallic precursor. In certain embodiments, the diffusion barrier layer may be exposed to an adhesion promoting agent prior to or during at least a portion of the forming step. Suitable adhesion promoting agents include nitrogen, nitrogen-containing compounds, carbon-containing compounds, carbon and nitrogen containing compounds, silicon-containing compounds, silicon and carbon containing compounds, silicon, carbon, and nitrogen containing compounds, or mixtures thereof. The process of the present invention provides substrates having enhanced adhesion between the diffusion barrier layer and the metal film.
摘要翻译： 描述了在其上沉积有扩散阻挡层的衬底表面上沉积金属膜的方法。 在本发明的一个实施方案中，该方法包括：提供基本上不含元素金属的扩散阻挡层的表面，并通过使用有机金属前体沉积在至少部分表面上形成金属膜。 在某些实施方案中，扩散阻挡层可以在形成步骤的至少一部分之前或期间暴露于粘合促进剂。 合适的粘合促进剂包括氮，含氮化合物，含碳化合物，含碳和氮的化合物，含硅化合物，含硅和碳的化合物，硅，碳和氮的化合物或其混合物。 本发明的方法提供了在扩散阻挡层和金属膜之间具有增强的粘附性的基底。
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5.发明授权Diffusion barrier layers and processes for depositing metal films thereupon by CVD or ALD processes 失效扩散阻挡层和通过CVD或ALD工艺沉积金属膜的方法公开(公告)号：US07524533B2
公开(公告)日：2009-04-28
申请号：US10820864
申请日：2004-04-09
CPC分类号： H01L21/76843 , C23C14/58 , C23C14/5846 , H01L21/28556 , H01L21/3205 , H01L21/32051 , H01L21/76856 , H01L21/76876
摘要： A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the metal film on at least a portion of the surface via deposition by using a organometallic precursor. In certain embodiments, the surface of the diffusion barrier layer may be exposed to an adhesion promoting agent prior to or during at least a portion of the forming step. Suitable adhesion promoting agents include nitrogen, nitrogen-containing compounds, carbon-containing compounds, carbon and nitrogen containing compounds, silicon-containing compounds, silicon and carbon containing compounds, silicon, carbon, and nitrogen containing compounds, and mixtures thereof. The process of the present invention provides substrates having enhanced adhesion between the diffusion barrier layer and the metal film.
摘要翻译： 描述了在其上沉积有扩散阻挡层的衬底表面上沉积金属膜的方法。 在一个实施方案中，该方法包括：提供基本上不含元素金属的扩散阻挡层的表面，并通过使用有机金属前体沉积在至少部分表面上形成金属膜。 在某些实施方案中，扩散阻挡层的表面可以在形成步骤的至少一部分之前或期间暴露于粘合促进剂。 合适的粘合促进剂包括氮，含氮化合物，含碳化合物，含碳和氮的化合物，含硅化合物，含硅和碳的化合物，含硅，碳和氮的化合物及其混合物。 本发明的方法提供了在扩散阻挡层和金属膜之间具有增强的粘附性的基底。
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6.发明申请Deposition Of Metal Films On Diffusion Layers By Atomic Layer Deposition And Organometallic Precursor Complexes Therefor 审中-公开通过原子层沉积和有机金属前体配合物沉积扩散层上的金属膜公开(公告)号：US20090130466A1
公开(公告)日：2009-05-21
申请号：US11941157
申请日：2007-11-16
申请人： Hansong Cheng , Diwakar Garg , Pablo Ordejon , Manuel Cobian
发明人： Hansong Cheng , Diwakar Garg , Pablo Ordejon , Manuel Cobian
CPC分类号： C07F1/005 , Y10T428/31678
摘要： Organometallic precursor complexes containing a metal and ligands containing electron withdrawing groups are disclosed. The complexes are adapted to undergo exothermic adsorption on a fully passivated diffusion barrier layer and on a metal layer deposited on the diffusion barrier layer and to undergo exothermic reduction on the diffusion barrier layer and the metal layer. The metal is preferably copper. Use of the complexes in atomic layer deposition is also disclosed.
摘要翻译： 公开了含金属的有机金属前体络合物和含有吸电子基团的配体。 配合物适于在完全钝化的扩散阻挡层和沉积在扩散阻挡层上的金属层上经受放热吸附并且在扩散阻挡层和金属层上进行放热还原。 金属优选为铜。 还公开了在原子层沉积中使用络合物。
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