摘要:
An example embodiment of the image sensor includes a light-sensing device including a first electrode, a second electrode disposed opposite to the first electrode, and a photoelectric conversion layer positioned between the first electrode and the second electrode. The photoelectric conversion layer includes a block copolymer including electron donating blocks and electron accepting blocks. The electron donating blocks are deposited together and connected to the first electrode and the second electrode. The electron accepting blocks are deposited together and connected to the first electrode and the second electrode. A color filter may be positioned on the second electrode of the light-sensing device.
摘要:
An example embodiment of the image sensor includes a light-sensing device including a first electrode, a second electrode disposed opposite to the first electrode, and a photoelectric conversion layer positioned between the first electrode and the second electrode. The photoelectric conversion layer includes a block copolymer including electron donating blocks and electron accepting blocks. The electron donating blocks are deposited together and connected to the first electrode and the second electrode. The electron accepting blocks are deposited together and connected to the first electrode and the second electrode. A color filter may be positioned on the second electrode of the light-sensing device.
摘要:
A photodiode according to example embodiments includes an anode, a cathode, and an intrinsic layer between the anode and the cathode. The intrinsic layer includes a P-type semiconductor and an N-type semiconductor, and composition ratios of the P-type semiconductor and the N-type semiconductor vary within the intrinsic layer depending on a distance of the intrinsic layer from one of the anode and the cathode.
摘要:
A photodiode according to example embodiments includes an anode, a cathode, and an intrinsic layer between the anode and the cathode. The intrinsic layer includes a P-type semiconductor and an N-type semiconductor, and composition ratios of the P-type semiconductor and the N-type semiconductor vary within the intrinsic layer depending on a distance of the intrinsic layer from one of the anode and the cathode.
摘要:
According to example embodiments, a photoelectric conversion device includes a first electrode including a light-receiving surface, a second electrode spaced apart from the first electrode and facing the first electrode, and an auxiliary layer between the second electrode and an exciton producing layer. The first electrode may be on the second electrode. The exciton producing layer may be between the first electrode and the second electrode. The exciton producing layer may be spaced apart from the second electrode by a distance corresponding to one of a crest and a trough of a standing wave of light to be converted into electricity.
摘要:
Provided is an organic pixel, which includes a semiconductor substrate including a pixel circuit, an interconnection layer having a first contact and a first electrode formed on a semiconductor substrate, and an organic photo-diode formed on the interconnection layer. For example, the organic photo-diode includes an insulation layer formed on the first electrode, a second electrode and a photo-electric conversion region formed between the first contact, the insulation layer and the second electrode. The photo-electric conversion region includes an electron donating organic material and an electron accepting organic material. The organic photo-diode may further include a second contact electrically connected to the first contact. The horizontal distance between the second contacts and the insulation layer may be less than or equal to a few micrometers, for example, 10 micrometers.
摘要:
A quinacridone derivative may be represented by Chemical Formula 1, and a photoactive layer may include the same. A photoelectric conversion device may include a first electrode, a second electrode spaced apart from and configured to face the first electrode, and the photoactive layer including the quinacridone derivative between the first electrode and the second electrode.
摘要:
An organic photoelectric device may include an anode and a cathode configured to face each other, and an active layer between the anode and cathode, wherein the active layer includes a quinacridone derivative and a thiophene derivative having a cyanovinyl group.
摘要:
A photodiode may include an anode, a cathode, a photoelectric conversion layer between the anode and the cathode, and a buffer layer between the photoelectric conversion layer and the anode. The buffer layer may have a dual-layered structure including an organic layer and an inorganic layer.
摘要:
According to example embodiments, a photoelectric conversion device includes a first electrode including a light-receiving surface, a second electrode spaced apart from the first electrode and facing the first electrode, and an auxiliary layer between the second electrode and an exciton producing layer. The first electrode may be on the second electrode. The exciton producing layer may be between the first electrode and the second electrode. The exciton producing layer may be spaced apart from the second electrode by a distance corresponding to one of a crest and a trough of a standing wave of light to be converted into electricity.