摘要:
A source driver includes a control unit, a data selecting unit, a gamma circuit, a level shifter and a driving buffer unit. The control unit compares a frame count value with a predetermined value N, where N is a natural number larger than two, and outputs a data select signal and a driver control signal based on the comparison. The data selecting unit outputs one of input data and black data in response to the data select signal. The gamma circuit generates a grayscale voltage based on selected data from the data selecting unit and the level shifter generates a driving voltage based on the grayscale voltage. The driving buffer unit provides an output voltage based on the driving voltage to a data line of a display device in response to the driver control signal. Accordingly, the source driver prevents afterimages, improves moving image quality and reduces power consumption
摘要:
Disclosed herein is a method of manufacturing inorganic hollow yarns, such as cermets, oxide-non oxide composites, poorly sinterable non-oxides, and the like, at low costs. The method includes preparing a composition comprising a self-propagating high temperature reactant, a polymer and a dispersant, wet-spinning the composition through a spinneret to form wet-spun yarns, washing and drying the wet-spun yarns to form polymer-self propagating high temperature reactant hollow yarns, and heat-treating the polymer-self propagating high temperature reactant hollow yarns to remove a polymeric component from the polymer-self propagating high temperature reactant hollow yarns while inducing self-propagating high temperature reaction of the self-propagating high temperature reactant to form inorganic hollow yarns. The composition comprises 45˜60 wt % of the self-propagating high temperature reactant, 6˜17 wt % of the polymer, 0.1˜4 wt % of the dispersant, and the balance of an organic solvent.
摘要:
A method of crystallizing amorphous silicon comprises forming an amorphous silicon layer on a substrate; forming an insulating layer on the amorphous silicon layer; forming a heat distributing metal layer on the insulating layer; and forming a thermite layer on the heat distributing metal layer. Ignition heat is then applied to ignite the thermite layer and generate sufficient localized exothermic heat from the ignited thermite layer so as to crystallize the amorphous silicon layer. The substrate beneath the amorphous silicon layer can be a heat sensitive substrate which is not substantially deformed by the localized crystallizing heat applied to the top portion of the amorphous silicon layer by way of the heat distributing metal layer and the insulating layer.