公开(公告)号：US20120132131A1

公开(公告)日：2012-05-31

申请号：US13328132

申请日：2011-12-16

申请人： Do-Won Song ,  Young-Hun Kim ,  Eun-Sang Ji ,  Young-Kyu Choi ,  Hwa-Jin Jo

发明人： Do-Won Song ,  Young-Hun Kim ,  Eun-Sang Ji ,  Young-Kyu Choi ,  Hwa-Jin Jo

IPC分类号： C30B15/22

CPC分类号： C30B15/305 ,  C30B29/06 ,  C30B30/04 ,  C30B35/00 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1068

摘要： The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip.

公开(公告)号：US20120141808A1

公开(公告)日：2012-06-07

申请号：US13328158

申请日：2011-12-16

申请人： Do-Won Song ,  Young-Hun Kim ,  Eun-Sang Ji ,  Young-Kyu Choi ,  Hwa-Jin Jo

发明人： Do-Won Song ,  Young-Hun Kim ,  Eun-Sang Ji ,  Young-Kyu Choi ,  Hwa-Jin Jo

IPC分类号： C01B33/02 ,  B32B9/04 ,  B28D5/00 ,  C30B15/22

CPC分类号： C30B15/305 ,  C30B29/06 ,  C30B30/04 ,  C30B35/00 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1068

摘要： The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip.

摘要翻译： 本发明报道了未报道的缺陷，并公开了缺陷控制硅锭，缺陷控制晶片及其制造方法和装置。 新的缺陷是当由施加强水平磁场的HMCZ（Horizo​​ntal Magnetic Czochralski）方法引起的螺旋位错产生于慢跑螺钉位错时产生的晶体缺陷，并且在冷却晶体的热处理期间传播以形成交叉滑移。 本发明改变了布置在硅熔体上方的加热器和锭之间的上部隔热结构的形状和结构，并且控制了硅单晶锭生长过程的初始条件或操作条件以减少由强的 水平磁场，防止螺丝错位传播到十字滑移。

公开(公告)号：US08349075B2

公开(公告)日：2013-01-08

申请号：US13328132

申请日：2011-12-16

申请人： Do-Won Song ,  Young-Hun Kim ,  Eun-Sang Ji ,  Young-Kyu Choi ,  Hwa-Jin Jo

发明人： Do-Won Song ,  Young-Hun Kim ,  Eun-Sang Ji ,  Young-Kyu Choi ,  Hwa-Jin Jo

IPC分类号： C30B15/14 ,  C30B11/00 ,  C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04 ,  C30B35/00

CPC分类号： C30B15/305 ,  C30B29/06 ,  C30B30/04 ,  C30B35/00 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1068

摘要： The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip.

摘要翻译： 本发明报道了未报道的缺陷，并公开了缺陷控制硅锭，缺陷控制晶片及其制造方法和装置。 新的缺陷是当由施加强水平磁场的HMCZ（Horizo​​ntal Magnetic Czochralski）方法引起的螺旋位错产生于慢跑螺钉位错时产生的晶体缺陷，并且在冷却晶体的热处理期间传播以形成交叉滑移。 本发明改变了布置在硅熔体上方的加热器和锭之间的上部隔热结构的形状和结构，并且控制了硅单晶锭生长过程的初始条件或操作条件以减少由强的 水平磁场，防止螺丝错位传播到十字滑移。

公开(公告)号：US08114215B2

公开(公告)日：2012-02-14

申请号：US12256663

申请日：2008-10-23

申请人： Do-Won Song ,  Young-Hun Kim ,  Eun-Sang Ji ,  Young-Kyu Choi ,  Hwa-Jin Jo

发明人： Do-Won Song ,  Young-Hun Kim ,  Eun-Sang Ji ,  Young-Kyu Choi ,  Hwa-Jin Jo

IPC分类号： C30B15/14 ,  C30B11/00 ,  C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04 ,  C30B35/00

CPC分类号： C30B15/305 ,  C30B29/06 ,  C30B30/04 ,  C30B35/00 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1068

摘要： The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip.

摘要翻译： 本发明报道了未报道的缺陷，并公开了缺陷控制硅锭，缺陷控制晶片及其制造方法和装置。 新的缺陷是当由施加强水平磁场的HMCZ（Horizo​​ntal Magnetic Czochralski）方法引起的螺旋位错产生于慢跑螺钉位错时产生的晶体缺陷，并且在冷却晶体的热处理期间传播以形成交叉滑移。 本发明改变了布置在硅熔体上方的加热器和锭之间的上部隔热结构的形状和结构，并且控制了硅单晶锭生长过程的初始条件或操作条件以减少由强的 水平磁场，防止螺丝错位传播到十字滑移。

公开(公告)号：US20090169460A1

公开(公告)日：2009-07-02

申请号：US12256663

申请日：2008-10-23

申请人： Do-Won Song ,  Young-Hun Kim ,  Eun-Sang Ji ,  Young-Kyu Choi ,  Hwa-Jin Jo

发明人： Do-Won Song ,  Young-Hun Kim ,  Eun-Sang Ji ,  Young-Kyu Choi ,  Hwa-Jin Jo

IPC分类号： C30B15/06 ,  C01B33/02

CPC分类号： C30B15/305 ,  C30B29/06 ,  C30B30/04 ,  C30B35/00 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1068

摘要： The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip.

摘要翻译： 本发明报道了未报道的缺陷，并公开了缺陷控制硅锭，缺陷控制晶片及其制造方法和装置。 新的缺陷是当由施加强水平磁场的HMCZ（Horizo​​ntal Magnetic Czochralski）方法引起的螺旋位错产生于慢跑螺钉位错时产生的晶体缺陷，并且在冷却晶体的热处理期间传播以形成交叉滑移。 本发明改变了布置在硅熔体上方的加热器和锭之间的上部隔热结构的形状和结构，并且控制了硅单晶锭生长过程的初始条件或操作条件以减少由强的 水平磁场，防止螺丝错位传播到十字滑移。

公开(公告)号：US20100080663A1

公开(公告)日：2010-04-01

申请号：US12495692

申请日：2009-06-30

申请人： Young-Hun Kim

发明人： Young-Hun Kim

IPC分类号： B23B39/06 ,  B23B41/14 ,  B23B47/00

CPC分类号： B23B41/00 ,  B23B2215/40 ,  B24B9/146 ,  B28D1/143

摘要： An apparatus for processing an eyeglass lens which is capable of forming a hole or various shapes on an eyeglass lens is disclosed. The apparatus includes a pair of lens fixing shafts for clamping a lens; a carriage which supports and moves the lens fixing shafts; a lens rotation motor for rotating the lens fixing shafts; and a drilling part for forming a hole on the lens, wherein the drilling part includes: a drill head having a drill to which a drill bit is fixed; a drill head mover which is connected with the drill head and moves the drill head straightly; and a fixing block which supports and fixes the drill head mover on the apparatus for processing an eyeglass lens.

摘要翻译： 公开了一种能够在眼镜镜片上形成孔或各种形状的眼镜镜片的处理装置。 该装置包括用于夹持透镜的一对透镜固定轴; 支撑并移动透镜固定轴的托架; 用于旋转透镜固定轴的透镜旋转电机; 以及用于在所述透镜上形成孔的钻孔部分，其中所述钻孔部分包括：具有钻头的钻头，钻头固定到钻头上; 钻头移动器，其与钻头连接并直立地移动钻头; 以及将钻头动子支撑并固定在用于处理眼镜镜片的装置上的固定块。

公开(公告)号：US20060144823A1

公开(公告)日：2006-07-06

申请号：US11323907

申请日：2005-12-29

申请人： Young-Hun Kim ,  Sung-Wook Lee ,  Young-Chang Park

发明人： Young-Hun Kim ,  Sung-Wook Lee ,  Young-Chang Park

IPC分类号： C23F1/00 ,  C03C15/00 ,  B44C1/22 ,  H01L21/66

CPC分类号： C09K13/08 ,  G01N1/32 ,  H01L22/12

摘要： The present invention relates to an etching solution for evaluating crystal defects of silicon wafers, and more particularly to an etching solution comprising KMnO4 and HF. The etching solution for crystal defect evaluation of a silicon wafer in accordance with the present invention can accurately and quickly evaluate the crystal defects in silicon wafers having specific resistance values of 0.01 Ω·cm or smaller, which previously could only be evaluated by physical methods. Also, the etching solution of the present invention can quickly evaluate a D-defects in silicon wafers having specific resistance values exceeding 0.01 Ω·cm.

摘要翻译： 本发明涉及一种用于评估硅晶片的晶体缺陷的蚀刻溶液，更具体地涉及包含KMnO 4和HF的蚀刻溶液。 根据本发明的硅晶片的晶体缺陷评估蚀刻溶液可以准确且快速地评估具有0.01Ω·cm或更小的电阻值的硅晶片中的晶体缺陷，其以前只能通过物理方法进行评估。 此外，本发明的蚀刻溶液可以快速评估具有超过0.01Ω·cm的电阻值的硅晶片中的D缺陷。

公开(公告)号：US08897259B2

公开(公告)日：2014-11-25

申请号：US12952714

申请日：2010-11-23

申请人： Young-Hun Kim

发明人： Young-Hun Kim

IPC分类号： H04W4/00 ,  H04W36/30 ,  H04W36/08 ,  H04W36/00

CPC分类号： H04W36/30 ,  H04W36/08

摘要： A method of changing a serving Base Station (BS) in a mobile communication system, and a mobile communication system for implementing the method, are provided. The method includes setting a minimum UpLink (UL) quality value, receiving DownLink (DL) quality values for a current serving BS of a User Equipment (UE) and respective BSs included in an active set of the UE from the UE periodically based on a predefined first period, receiving UL quality values for the serving BS and the respective BSs included in the active set from the serving BS and the respective BSs included in the active set periodically based on a predefined second period, determining if the UL quality value for the serving BS is less than the minimum UL quality value, when, as a result of the determination, the UL quality value for the serving BS is less than the minimum UL quality value, selecting BSs, which have UL quality values equal to or greater than the minimum UL quality value among the BSs included in the active set, as candidate BSs, and determining a BS, which has a maximum DL quality value among the candidate BSs, as a new serving BS of the UE, wherein the active set represents a set of BSs that can provide DL/UL service to the UE.

摘要翻译： 提供了一种在移动通信系统中改变服务基站（BS）的方法和用于实现该方法的移动通信系统。 所述方法包括：基于以下步骤，从UE周期性地设置最小UpLink（UL）质量值，为UE的当前服务BS接收DownLink（DL）质量值和从UE周围的包括在UE的有效集合中的各个BS 基于预定义的第二周期，从服务BS和包括在活动集合中的各个BS周期性地接收服务BS和包括在活动集中的各个BS的UL质量值，确定UL质量值是否为 服务BS小于最小UL质量值时，作为确定的结果，服务BS的UL质量值小于最小UL质量值，选择具有等于或大于等于或等于UL的质量值的BS 作为候选BS，包括在活动集中的BS中的最小UL质量值，并且将候选BS中具有最大DL质量值的BS确定为UE的新服务BS，其中活动 集合表示可以向UE提供DL / UL服务的一组BS。

公开(公告)号：US08663664B2

公开(公告)日：2014-03-04

申请号：US10567483

申请日：2004-09-13

申请人： Tae-Won Son ,  Young-Hun Kim ,  Hyun-Oh Yoo

发明人： Tae-Won Son ,  Young-Hun Kim ,  Hyun-Oh Yoo

IPC分类号： A61K8/02 ,  A61K35/26

CPC分类号： A61K8/042 ,  A61K8/0208 ,  A61K8/345 ,  A61K8/73 ,  A61K8/736 ,  A61K9/06 ,  A61K9/7007 ,  A61K2800/24 ,  A61K2800/54 ,  A61K2800/594 ,  A61Q19/00

摘要： The object of this invention is to provide a temperature-sensitive state-changing hydrogel composition and a method of producing the same. The hydrogel composition includes 1-10 wt % of branched gelation polymer, 0.5 5 wt % of electrolyte gelation polymer, 0.5-5 wt % of skin-communication enhancer, 1-10 wt % of natural biomaterial, 3-30 wt % of polyhydric alcohol, 1-10 wt % of functional additive, and 30-93 wt % of water based on a total weight of the composition. Hydrogel is transformed into a fluid state at 10-50° C. The hydrogel composition is transformed into a fluid state due to body temperature when it comes into contact with the skin to be fluidized, so that cosmetics or drugs contained in hydrogel are uniformly and quickly delivered into the skin.

摘要翻译： 本发明的目的是提供一种温度敏感状态改变水凝胶组合物及其制备方法。 水凝胶组合物包含1-10重量％的支化凝胶聚合物，0.55重量％的电解质凝胶聚合物，0.5-5重量％的皮肤连通增强剂，1-10重量％的天然生物材料，3-30重量％的多羟基 醇，1-10重量％的功能添加剂和30-93重量％的水，基于组合物的总重量。 水凝胶在10-50℃下被转化为流体状态。当水凝胶组合物与皮肤接触以被流化时，由于体温而转化为流体状态，使得包含在水凝胶中的化妆品或药物是均匀的和 迅速送入皮肤。

公开(公告)号：US20070280974A1

公开(公告)日：2007-12-06

申请号：US10567483

申请日：2004-09-13

申请人： Tae-Won Son ,  Young-Hun Kim ,  Hyun-Oh Yoo

发明人： Tae-Won Son ,  Young-Hun Kim ,  Hyun-Oh Yoo

IPC分类号： A61K8/02 ,  A01N1/00 ,  A61Q1/00

CPC分类号： A61K8/042 ,  A61K8/0208 ,  A61K8/345 ,  A61K8/73 ,  A61K8/736 ,  A61K9/06 ,  A61K9/7007 ,  A61K2800/24 ,  A61K2800/54 ,  A61K2800/594 ,  A61Q19/00

摘要： The object of this invention is to provide a temperature-sensitive state-changing hydrogel composition and a method of producing the same. The hydrogel composition includes 1-10 wt % of branched gelation polymer, 0.5 5 wt % of electrolyte gelation polymer, 0.5-5 wt % of skin-communication enhancer, 1-10 wt % of natural biomaterial, 3-30 wt % of polyhydric alcohol, 1-10 wt % of functional additive, and 30-93 wt % of water based on a total weight of the composition. Hydrogel is transformed into a fluid state at 10-50° C. The hydrogel composition is transformed into a fluid state due to body temperature when it comes into contact with the skin to be fluidized, so that cosmetics or drugs contained in hydrogel are uniformly and quickly delivered into the skin.

摘要翻译： 本发明的目的是提供一种温度敏感状态改变水凝胶组合物及其制备方法。 水凝胶组合物包含1-10重量％的支化凝胶聚合物，0.55重量％的电解质凝胶聚合物，0.5-5重量％的皮肤连通增强剂，1-10重量％的天然生物材料，3-30重量％的多羟基 醇，1-10重量％的功能添加剂和30-93重量％的水，基于组合物的总重量。 水凝胶在10-50℃下被转化为流体状态。当水凝胶组合物与皮肤接触以被流化时，由于体温而转化为流体状态，使得包含在水凝胶中的化妆品或药物是均匀的和 迅速送入皮肤。